Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
94 words
A display (10, 40) of the type having at least one pixel including a pair of address lines (16, 26 and 56, 66; 76, 86), a pair of electrodes (28, 36 and 68, 88) with light influencing material (30, 70) disposed between said electrodes, characterized by said at least one pixel element including at least a pair of diodes (18, 20 and 58, 60; 78, 80) formed from deposited semiconductor material with one of said diodes (20; 60 and 80) positioned on a region of one of said address lines (16 and 56; 76).
Claim 2
Dependent Claim
94 words
A display (10, 40) of the type having at least one pixel including a pair of address lines (16, 26 and 56, 66; 76, 86), a pair of electrodes (28, 36 and 68, 88) with light influencing material (30, 70) disposed between said electrodes, characterized by said at least one pixel element including at least a pair of diodes (18, 20 and 58, 60; 78, 80) formed from deposited semiconductor material with one of said diodes (20; 60 and 80) positioned on a region of one of said address lines (16 and 56; 76).
Claim 3
Dependent Claim
24 words
A display according to claim 1, further characterized by said deposited semiconductor material being an amorphous semiconductor silicon alloy which inludes hydrogen or fluorine.
Claim 4
Dependent Claim
58 words
A display according to claim 1 or 2 further characterized by said diodes (18, 20) which include a first doped semiconductor region (18a, 20a), an intrinsic semiconductor region (18b, 20b) overlying said first doped region, and a second doped semiconductor region (18c, 20c) overlying said intrinsic region, said first and second doped semiconductor regions being opposite in conductivity.
Claim 5
Dependent Claim
68 words
A display according to one of the preceding claims, characterized in that the pair of series connected diodes (18, 20 and 58, 60; 78, 80) is coupled between said address leads, that a first conductive electrode (28, 68) is coupled between said diodes, that a second electrode (36, 85) is spaced from said first electrode, and that the light influencing material (30, 70) is disposed between said electrodes.
Claim 6
Dependent Claim
18 words
A display according to claim 3 or 4 characterized therein that said first doped semiconductor region being n-type.
Claim 7
Dependent Claim
72 words
A display according to one of the preceding claims further characterized by an interconnect lead (14, 54, 98), said interconnect lead and one of said address leads being formed on said substrate (12, 52, 92) in spaced apart relation, and further characterized by one of said diodes (20, 60, 102) being formed on said one of said address leads and said other diode (18, 58, 100) being formed on said interconnect lead.
Claim 8
Dependent Claim
99 words
A display according to claim 6 characterized therein that a layer of insulating material (22, 62, 104) is produced of a polyimide, extends between said diodes (18, 20; 58, 60; 100, 102) and has an opening (24; 64; 106, 108, 110) communicating with said interconnect lead (14, 54, 98), and further characterized by one of said electrodes (28, 68, 112) being formed over said insulating layer, extends through said opening to contact said interconnect lead and electrically contacts said diode (20, 60, 102) formed on said one address lead (16, 56, 94) for connecting said diodes in series relation.
Claim 9
Dependent Claim
44 words
A display according to claim 7 further characterized by said other electrode (36, 88, 118) being formed from a transparent conductive material and further includes a transparent support member, wherein said transparent conductive material forming said other electrode being deposited on said support member.
Claim 10
Dependent Claim
103 words
A display as claimed in one of the preceding claims characterized therein that each said diode pair being coupled in series relation, a first pair of address leads (56, 66) coupled to respective ends of one of said series coupled diodes , a second pair of address leads (76, 86) coupled to respective ends of the other of said series coupled diodes (78, 80), a first electrode (68) coupled to the junction of one of said pair of diodes, a second electrode (88) coupled to the junction ofthe other said pair of diodes, and liquid crystal display material (70) disposed between said electrodes.
Claim 11
Dependent Claim
45 words
A display according to one of the preceding claims further characterized by said other electrode (118) being formed from a transparent conductive material and further characterized by a transparen support member, said transparent conductive material forming said other electrode being deposited on said support member.
Claim 12
Independent Claim
140 words
A method of making a liquid crystal display including at least one pixel, said method characterized by the steps of: a) providing an insulative substrate; b) forming an interconnect lead and an address lead on said substrate in spaced apart relation; c) forming a diode on each of said leads; d) forming a layer of insulative material between said diodes; e) forming an opening in said insulative layer communicating with said interconnect lead; f) forming a conductive electrode over said insulative layer in contact with said diode formed on said address lead and in contact with said interconnect lead through said opening; g) forming another address lead contacting said diode formed on said interconnect lead; h) applying liquid crystal display material over at least said conductive electrode; and i) forming n second conductive electrode over said liquid crystal display material.
Claim 13
Independent Claim
140 words
A method of making a liquid crystal display including at least one pixel, said method characterized by the steps of: a) providing an insulative substrate; b) forming an interconnect lead and an address lead on said substrate in spaced apart relation; c) forming a diode on each of said leads; d) forming a layer of insulative material between said diodes; e) forming an opening in said insulative layer communicating with said interconnect lead; f) forming a conductive electrode over said insulative layer in contact with said diode formed on said address lead and in contact with said interconnect lead through said opening; g) forming another address lead contacting said diode formed on said interconnect lead; h) applying liquid crystal display material over at least said conductive electrode; and i) forming n second conductive electrode over said liquid crystal display material.
Claim 14
Dependent Claim
17 words
A method according to claim 11 further characterized by said diodes being formed from deposited semiconductor materials.
Claim 15
Dependent Claim
24 words
A method according to claim 12 further characterized by said deposited semiconductor material being an amorphous semiconductor silicon alloy which includes hydrogen or fluorine.
Claim 16
Independent Claim
46 words
A method according to one of claims 11 - 13 further characterized by the steps of providing a transparent support member, depositing said second electrode onto said support member, and thereafter aligning said second electrode with said first electrode with said liquid crystal display material therebetween.
Claim 17
Independent Claim
65 words
A method according to one of claims 11 - 14 further characterized by the steps of: repeating steps (a) through (g) to form first and second subassemblies; applying liquid crystal display material over at least the electrode of one of the subassemblies; and aligning the electrode of the other said subassembly with the electrode of said one subassembly with said liquid crystal display material therebetween.
Claim 18
Independent Claim
88 words
A method of forming a plurality of discrete individual electronic devices on a substrate, wherein said devices include a plurality of semiconductor regions, said method characterized by the steps of: successively forming a plurality of layers of semiconductor materials on said substrate over an area substantially larger than the areas of said devices to be formed on said substrate to form said plurality of semiconductor regions; and removing area portions of all of said layers of semiconductor materials to leave remaining said discrete individual devices on said substrate.
Claim 19
Independent Claim
88 words
A method of forming a plurality of discrete individual electronic devices on a substrate, wherein said devices include a plurality of semiconductor regions, said method characterized by the steps of: successively forming a plurality of layers of semiconductor materials on said substrate over an area substantially larger than the areas of said devices to be formed on said substrate to form said plurality of semiconductor regions; and removing area portions of all of said layers of semiconductor materials to leave remaining said discrete individual devices on said substrate.
Claim 20
Dependent Claim
53 words
A method according to claim 16 further characterized by said semiconductor materials being deposited by vapor deposition being a glow discharge decomposition deposition of at least silane gas (SiH 4 ) and/or tetrafluoride gas (SiF 4 ) with hydrogen gas or fluorine gas being mixed with said silane gas prior to said deposition.