Background charge suppression in a solid state photosensitive device

Claim 1

Background charge suppression method for a photosensitive solid state device comprising N photodetectors (1) embodied on a first substrate and connected to a reading stage through a transition zone comprising at least one storing zone formed beneath a storing gate (G ST ) as well as a transfer gate (G T ) and a multiplexer (R) of charge transfer type, wherein at least the transition zone and the multiplexer are embodied on a second substrate (2), characterized in that the second substrate (2) is polarized to a negative voltage (V SM ) with respect to that (V SD ) of the first substrate, and having performed the integration of the charges and their transfer to the multiplexer in the usual manner leaving a charge Q o in the storing zone, the transfer gate (G T ) is polarized so that the potential of this gate is lower than the polarization voltage of the first substrate (V SD ), and then the storing gate (G ST ) is polarized so that the potential beneath this gate is comprised between the polarization voltage of the first substrate and the potential beneath the transfer gate, in order to evacuate the charge Q o to the photodetectors (1).