Patent US1255650A successfully refreshed from Google Patents.
EP0148031A2
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Semiconductor device
Assignee: Hitachi Ltd
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Filing: 1984-12-28
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Granted: —
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Expires: 2004-12-28
Abstract
Abstract Disclosed is a semiconductor device comprising a control electrode (30) for forming carriers at a junction interface between first and second layers (17.12) of different materials and for controlling the carriers, a first electrode (29) which is electronically connected to the carriers, and a second electrode region (18) for taking out the carriers in a direction perpendicular to the junction interface. Since the two-dimensional carriers are caused to flow as a current in the direction perpendicular to the plane at which the carriers exist, a large current can be derived as an operating current.
Inventors
- 👤 Toshiyuki Hitachi-Dai Usagawa
- 👤 Yuichi Ono
- 👤 Susumu Takahashi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 16:28
CPC Classifications
H; H10; H10D; H10D18/00; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/475; H10D30/4755; H10D30/202
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
63 words
A semiconductor device comprising, at least, first and second layers of different materials which form carriers at a junction interface thereof, a control electrode which serves to control the carriers, a first electrode which is electronically connected with the carriers, and a second electrode region which serves to take out the carriers in a direction perpendicular to a plane of the junction interface.
Claim 2
Dependent Claim
63 words
A semiconductor device comprising, at least, first and second layers of different materials which form carriers at a junction interface thereof, a control electrode which serves to control the carriers, a first electrode which is electronically connected with the carriers, and a second electrode region which serves to take out the carriers in a direction perpendicular to a plane of the junction interface.
Claim 3
Dependent Claim
106 words
A semiconductor device comprising, at least, a three-layer structure in which a first semiconductor layer and a second semiconductor layer are arranged so as to define a heterojunction and in which the second layer semiconductor layer and a third semiconductor / are arranged so as to define a junction, an electrode which is connected with two-dimensional carriers to appear in the vicinity of the heterojunction interface, an electrode which is insulated from the two-dimensional carriers and which is electronically connected to said third semiconductor layer, and an electrode which is connected to said first semiconductor layer and which serves as control means for the two-dimensional carriers.
Claim 4
Dependent Claim
106 words
A semiconductor device comprising, at least, a three-layer structure in which a first semiconductor layer and a second semiconductor layer are arranged so as to define a heterojunction and in which the second layer semiconductor layer and a third semiconductor / are arranged so as to define a junction, an electrode which is connected with two-dimensional carriers to appear in the vicinity of the heterojunction interface, an electrode which is insulated from the two-dimensional carriers and which is electronically connected to said third semiconductor layer, and an electrode which is connected to said first semiconductor layer and which serves as control means for the two-dimensional carriers.
Claim 5
Dependent Claim
26 words
A semiconductor device as defined in Claim 2, wherein an electron affinity of said first semiconductor layer is smaller than that of said second semiconductor layer.
Claim 6
Dependent Claim
83 words
A semiconductor device as defined in Claim 3, wherein said first semiconductor layer is an n-type semiconductor layer or a semiconductor layer which is not intentionally doped with any impurity (not higher than a concentration of 10 15 cm -3 ), said second semiconductor layer is a p-type semiconductor layer or a semiconductor layer which is not intentionally doped with any impurity (not higher than a concentration of 10 15 cm -3 ), and said third semiconductor layer is an n-type semiconductor layer.
Claim 7
Dependent Claim
40 words
A semiconductor device as defined in Claim 2, wherein a sum between an electron affinity and band gap of said first semiconductor layer is greater than a sum between an electron affinity and band gap of said second semiconductor layer.
Claim 8
Dependent Claim
50 words
A semiconductor device as defined in Claim 5, wherein said first semiconductor layer is of the p-type or is not intentionally doped with any impurity, said second semiconductor layer is of the n-type or is not intentionally doped with any impurity, and said third semiconductor layer is of the p-type.
Claim 9
Dependent Claim
20 words
A semiconductor device as defined in Claim 2, wherein said third semiconductor layer is selectively formed in a semi-insulating substrate.
Claim 10
Dependent Claim
33 words
A semiconductor device as defined in Claim 2, wherein said third semiconductor layer is selectively formed in a semiconductor substrate which has the same conductivity type as that of said second semiconductor layer.
References Cited (Backward Citations)
No citation records indexed.
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