EP0147626A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device comprising bipolar and MOS transistors, and method of producing the same
Assignee: Hitachi Ltd
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Filing: 1984-11-23
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Granted: —
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Expires: 2004-11-23
Abstract
Abstract A semiconductor device includes a bipolar transistor (48, 152) formed in a monocrystalline silicon region (6) which is epitaxially grown from a silicon substrate (1, 41), and an MOS transistor (47, 154, 156) formed in each of silicon regions (22', 23) which are epitaxially grown on an insulating layer (2, 3) provided on the silicon substrate. The silicon regions on the insulating layer are treated as follows. When one principal surface of the silicon substrate, that is, the principal surface including the monocrystalline silicon region (6) and the silicon regions (22', 23) is heated from the outside, heat produced in the monocrystalline silicon region (6) is rapidly conducted to the silicon substrate, but heat produced in the silicon regions (22', 23) is hard to dissipate. That is, the silicon regions on the insulating layer are melted and then recrystallized. Thus, the silicon regions can be transformed into approximately monocrystalline layers, on each of which the MOS transistor is formed. Further, a vertical power transistor can be formed by providing the collector electrode of the bipolar transistor on the other principal surface of the silicon substrate.
Inventors
- 👤 Kiyoshi Tsukuda
- 👤 Mitsuru Hirao
- 👤 Osamu Saito
- 👤 Atsuo Watanabe
- 👤 Takahide Ikeda
- 👤 Tatsuya Kamei
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 07:44
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2926; H10P14/27; H10D; H10D84/00; H10D84/01; H10D84/0107; H10D84/0109; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/02; H10D84/03; H10D84/038; H10D84/40; H10D84/401; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/38; H10P14/3802; H10P14/3808; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P90/1912; H10W10/011; H10W10/012; H10W10/13
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
118 words
A semiconductor device comprising: (a) a first dielectric layer (2, 3) formed on one of a pair of principal surfaces of a semiconductor substrate (1, 41); (b) a first semiconductor layer (6) epitaxially grown on said semiconductor substrate at a region of said one principal surface, said first dielectric layer being absent in said region; (c) a plurality of second semiconductor layers (32, 33) grown on said first dielectric layer epitaxially from said semiconductor substrate through said first semiconductor layer; and (d) a plurality of second dielectric layers (10) kept in contact with said first dielectric layer for separating said first semiconductor layer from said second semiconductor layers and for separating said second semiconductor layers from each other.
Claim 2
Dependent Claim
118 words
A semiconductor device comprising: (a) a first dielectric layer (2, 3) formed on one of a pair of principal surfaces of a semiconductor substrate (1, 41); (b) a first semiconductor layer (6) epitaxially grown on said semiconductor substrate at a region of said one principal surface, said first dielectric layer being absent in said region; (c) a plurality of second semiconductor layers (32, 33) grown on said first dielectric layer epitaxially from said semiconductor substrate through said first semiconductor layer; and (d) a plurality of second dielectric layers (10) kept in contact with said first dielectric layer for separating said first semiconductor layer from said second semiconductor layers and for separating said second semiconductor layers from each other.
Claim 3
Dependent Claim
41 words
A semiconductor device according to Claim 1, __ further comprising a bipolar transistor (48) formed in a semiconductor region including said first semiconductor layer, and a plurality of MOS transistors (47) formed in another semiconductor region including said second semiconductor layers.
Claim 4
Dependent Claim
52 words
A semiconductor device according to Claim 1, further comprising a bipolar transistor circuit (152) formed in a semiconductor region including said first semiconductor layer, and an N-channel MOS transistor (154) and a P-channel MOS transistor (156) formed in a semiconductor region including said second semiconductor layers, for forming a CMOS transistor circuit.
Claim 5
Dependent Claim
24 words
A semiconductor device according to Claim 3, wherein said bipolar transistor includes an electrode provided on the other principal surface of said semiconductor substrate.
Claim 6
Dependent Claim
23 words
A semiconductor device according to Claim 1, wherein said first semiconductor layer (6) and said second semiconductor layers (32, 33) are substantially monocrystalline.
Claim 7
Dependent Claim
51 words
A semiconductor device according to Claim 5, wherein said first and second substantially-monocrystalline layers are formed by placing said semiconductor substrate on a heater (20) kept at a temperature of 1100 to 1300°C and by heating said semiconductor substrate from the upside thereof by one of laser light and infrared light.
Claim 8
Independent Claim
122 words
A method of fabricating a semiconductor device, comprising steps of: (a) forming a first dielectric layer (2, 3) on one principal surface of a monocrystalline silicon substrate (1, 41), said principal surface being parallel to a (100) crystallographic plane; (b) partially removing said first dielectric layer; (c) epitaxially growing silicon layer (6, 22) on said silicon substrate; and (d) separating said epitaxially-grown silicon layer in such a manner that a first silicon layer (6) formed in a semiconductor region devoid of said first dielectric layer is separated from a plurality of second silicon layers (22', 23) formed on said first dielectric layer, by a separation layer (10), and said second silicon layers are separated from each other by another separation layer (10).
Claim 9
Independent Claim
122 words
A method of fabricating a semiconductor device, comprising steps of: (a) forming a first dielectric layer (2, 3) on one principal surface of a monocrystalline silicon substrate (1, 41), said principal surface being parallel to a (100) crystallographic plane; (b) partially removing said first dielectric layer; (c) epitaxially growing silicon layer (6, 22) on said silicon substrate; and (d) separating said epitaxially-grown silicon layer in such a manner that a first silicon layer (6) formed in a semiconductor region devoid of said first dielectric layer is separated from a plurality of second silicon layers (22', 23) formed on said first dielectric layer, by a separation layer (10), and said second silicon layers are separated from each other by another separation layer (10).
Claim 10
Dependent Claim
46 words
A method of fabricating a semiconductor device as claimed in Claim 7, wherein said separation layers (10) are formed by selectively oxidizing said epitaxially-grown silicon layer (6, 22) while using a third dielectric layer (9) provided on said epitaxially-grown silicon layers (6, 22), as a mask.
Claim 11
Dependent Claim
36 words
A method of fabricating a semiconductor device as claimed in Claim 7, further comprising a step of heating said epitaxially-grown silicon layer to a temperature of 1,300 to 1,400°C to substantially monocrystallize said epitaxially-grown silicon layer.
Claim 12
Dependent Claim
48 words
A method of fabricating a semiconductor device as claimed in Claim 9, further comprising a step of forming a bipolar transistor circuit (48) in a semiconductor region including said first silicon layer, and forming a CMOS transistor circuit (47) in another semiconductor region including said second silicon layers.
Claim 13
Dependent Claim
59 words
ll. A method of fabricating a semiconductor device as claimed in Claim 7, wherein said separating step includes a step of forming grooves (101) by selectively etching off said epitaxially-grown silicon layer (6, 22) to a depth reaching said first dielectric layer, and another step of forming a fourth dielectric layer (140, 150) in each of said grooves (101).
Claim 14
Dependent Claim
52 words
A method of fabricating a semiconductor device as claimed in Claim 11, further comprising a step of forming a bipolar transistor circuit (152) in a semiconductor region including said first silicon layer (6), and forming a CMOS transistor circuit (154, 156) in another semiconductor region including said second silicon layers (22', 23).
References Cited (Backward Citations)
No citation records indexed.
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