EP0147322A2
Expired / Lapsed
EP
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Method for forming a pattern having a fine gap.
Assignee: Fujitsu Ltd
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Filing: 1984-12-21
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Granted: —
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Expires: 2004-12-21
Abstract
Abstract A method is disclosed of forming a fine pattern on a substrate (1), in which an etching mask pattern (B) is formed on a layer of material (A) of a pattern to be formed, an overlying layer (C) is deposited on a pattern material layer (A) and the mask pattern (B), and thereafter, the overlying layer and the pattern material layer are etched by ion etching. This method makes it possible, due to the pattern-widening effect caused by the deposition of the overlying layer and by ion etching, to form a pattern having a gap smaller than 0.5 um or a continuous-disk pattern having a period of 2 um or less by photolithography having a 1 um resolution. It is also possible to form a pattern adapted to enable an easy planing process, by utilizing the difference in etching rate between the mask pattern and the overlying layer. An apparatus used for carrying out the pattern forming method comprises film layer forming means and ion etching means, whereby the overlying layer forming step and the ion etching step can be successively performed by using one and the same apparatus.
Inventors
- 👤 Teiji Majima
- 👤 Hiromichi Watanabe
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 00:52
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/40; H10P76/408; H10P76/4085; H01; H01F; H01F41/00; H01F41/32; H01F41/34; H10P76/405; H10P76/4083; H10P76/4088
Claims Analysis
Total Claims: 39
Claim 1
Independent Claim
141 words
A method for forming a pattern having a fine gap on a substrate, comprising the steps of: (a) depositing a layer (A) of material, from which said pattern (AP) is formed, on the surface of said substrate; (b) forming an etching mask pattern (B) having a first gap on said pattern material layer (A); (c) depositing a pattern-widening overlying layer (C) on the exposed surfaces of said pattern material layer (A) and the mask pattern (B), so that the undulation of the mask pattern is substantially maintained, thereby reforming said first gap into a second smaller gap; and (d) etching said overlying layer (C) and said pattern material layer (A) by using ion etching employing energized particles of an inert gas, thereby forming said pattern (AP) having said fine gap smaller than said second gap from said pattern material layer (A).
Claim 2
Independent Claim
141 words
A method for forming a pattern having a fine gap on a substrate, comprising the steps of: (a) depositing a layer (A) of material, from which said pattern (AP) is formed, on the surface of said substrate; (b) forming an etching mask pattern (B) having a first gap on said pattern material layer (A); (c) depositing a pattern-widening overlying layer (C) on the exposed surfaces of said pattern material layer (A) and the mask pattern (B), so that the undulation of the mask pattern is substantially maintained, thereby reforming said first gap into a second smaller gap; and (d) etching said overlying layer (C) and said pattern material layer (A) by using ion etching employing energized particles of an inert gas, thereby forming said pattern (AP) having said fine gap smaller than said second gap from said pattern material layer (A).
Claim 3
Dependent Claim
19 words
A method according to claim 1, wherein said mask pattern (B) is formed of a photoresist material by photolithography.
Claim 4
Dependent Claim
16 words
A method according to claim 1, wherein said overlying layer (C) is deposited by vapor deposition.
Claim 5
Dependent Claim
29 words
A method according to claim 3, wherein said overlying layer (C) is deposited by depositing a material thereof in a direction oblique to the normal line of said substrate.
Claim 6
Dependent Claim
15 words
A method according to claim 1, wherein said overlying layer (C) is deposited by sputtering.
Claim 7
Dependent Claim
25 words
A method according to claim 1, wherein said overlying layer (C) is made of a material different from that of said pattern material layer (A).
Claim 8
Dependent Claim
25 words
A method according to claim 1, wherein said overlying layer (C) is made of the same material as that of said pattern material layer (A).
Claim 9
Dependent Claim
35 words
A method according to claim 1, wherein said pattern material layer (A) is made of permalloy (NiFe), and said pattern (AP) is a permalloy pattern for magnetic bubble propagation in a magnetic bubble memory device.
Claim 10
Dependent Claim
16 words
A method according to claim 8, wherein said overlying layer (C) is made of copper (Cu).
Claim 11
Dependent Claim
16 words
A method according to claim 8, wherein said overlying layer (C) is made of permalloy (NiFe).
Claim 12
Dependent Claim
37 words
A method according to claim 1, wherein said first gap of the mask pattern (B) has a width of 1 µm or more, and the gap of said pattern (AP) has a width smaller than 0.5 µm.
Claim 13
Independent Claim
206 words
A method for forming a pattern having a fine gap on a substrate, comprising the steps of: (a) forming an underlying mask pattern (D) on the surface of said substrate, said underlying mask pattern having an edge defining at least a part of edges of said pattern (AP) to be formed, except for the edges opposite to each other with said gap therebetween; (b) depositing a layer (A) of material, from which said pattern (AP) is formed, on the exposed surfaces of said substrate and said underlying mask pattern (D), said pattern material layer (A) is thinner than said underlying mask pattern (D); (c) forming an etching mask pattern (B) having a first gap on said pattern material layer (A); (d) depositing a pattern-widening overlying layer (C) on the exposed surfaces of said pattern material layer (A) and the mask pattern (B), so that the undulation of the mask pattern is substantially maintained, thereby reforming said first gap into a second smaller gap; (e) etching said overlying layer (C) and said pattern material layer (A) by using ion etching employing energized particles of an inert gas, thereby forming said pattern (AP) having said fine gap smaller than said second gap from said pattern material layer (A).
Claim 14
Independent Claim
206 words
A method for forming a pattern having a fine gap on a substrate, comprising the steps of: (a) forming an underlying mask pattern (D) on the surface of said substrate, said underlying mask pattern having an edge defining at least a part of edges of said pattern (AP) to be formed, except for the edges opposite to each other with said gap therebetween; (b) depositing a layer (A) of material, from which said pattern (AP) is formed, on the exposed surfaces of said substrate and said underlying mask pattern (D), said pattern material layer (A) is thinner than said underlying mask pattern (D); (c) forming an etching mask pattern (B) having a first gap on said pattern material layer (A); (d) depositing a pattern-widening overlying layer (C) on the exposed surfaces of said pattern material layer (A) and the mask pattern (B), so that the undulation of the mask pattern is substantially maintained, thereby reforming said first gap into a second smaller gap; (e) etching said overlying layer (C) and said pattern material layer (A) by using ion etching employing energized particles of an inert gas, thereby forming said pattern (AP) having said fine gap smaller than said second gap from said pattern material layer (A).
Claim 15
Dependent Claim
58 words
A method according to claim 12, wherein said mask pattern (B') is formed to overlap a part of said pattern material layer (A), which is deposited on said underlying mask pattern (D), and wherein after the pattern has been formed, a useless portion of the pattern material layer (A) remaining on the underlying mask pattern (D) is removed.
Claim 16
Dependent Claim
63 words
A method according to claim 13, wherein said underlying mask pattern (D) is made of a material having selective etching characteristics in respect to the pattern material layer (A), and wherein, after the pattern has been formed, the underlying layer (D) is removed by etching and, thereafter, the remaining useless portion of the pattern material layer (A) is removed by a mechanical technique.
Claim 17
Dependent Claim
58 words
A method according to claim 13, wherein, after the pattern is formed, a covering material is deposited on the entire exposed surfaces of the substrate, thereby performing the planing, and thereafter, an etching is used to remove the useless portion of the pattern material layer (A) remaining on the underlying mask pattern (D), together with said covering material.
Claim 18
Independent Claim
200 words
A method for forming a pattern having a fine gap on a substrate, comprising the steps of: (a) forming a layer (A) of material, from which said pattern (AP) is formed, on the surface of said substrate; (b) forming a first etching mask pattern (Bl) having only a first gap on said pattern material layer (A); (c) depositing an overlying layer (C) on the exposed surfaces of said pattern material layer (A) and said first mask pattern (Bl), so that the undulation of said mask pattern is substantially maintained, thereby reforming said first gap into a second smaller gap; and (d) etching said overlying layer (C) and said pattern material layer (A) by using ion etching employing energized particles of an inert gas, thereby forming said fine gap smaller than said second gap in said permalloy layer (A); (e) removing said first mask pattern (Bl); (f) forming a second mask pattern (B2) on the pattern material layer (A) formed with said fine gap, so as to cover said fine gap and the region corresponding to said pattern (AP) to be formed; and (g) etching the exposed region of said pattern material layer (A), so as to form said pattern (AP).
Claim 19
Independent Claim
200 words
A method for forming a pattern having a fine gap on a substrate, comprising the steps of: (a) forming a layer (A) of material, from which said pattern (AP) is formed, on the surface of said substrate; (b) forming a first etching mask pattern (Bl) having only a first gap on said pattern material layer (A); (c) depositing an overlying layer (C) on the exposed surfaces of said pattern material layer (A) and said first mask pattern (Bl), so that the undulation of said mask pattern is substantially maintained, thereby reforming said first gap into a second smaller gap; and (d) etching said overlying layer (C) and said pattern material layer (A) by using ion etching employing energized particles of an inert gas, thereby forming said fine gap smaller than said second gap in said permalloy layer (A); (e) removing said first mask pattern (Bl); (f) forming a second mask pattern (B2) on the pattern material layer (A) formed with said fine gap, so as to cover said fine gap and the region corresponding to said pattern (AP) to be formed; and (g) etching the exposed region of said pattern material layer (A), so as to form said pattern (AP).
Claim 20
Independent Claim
137 words
A method for forming a contiguous-element pattern on a substrate, said pattern being constituted of pattern elements arranged with the adjacent elements being substantially interconnected by portions thereof, comprising the steps of: (a) depositing a layer of material, from which said contiguous-element pattern is formed, on the surface of said substrate; (b) forming an etching mask pattern having a first gap on said pattern material layer; (c) depositing a pattern-widening overlying layer on the exposed surfaces of said pattern material layer and the mask pattern, so that the undulation of the mask pattern is substantially maintained, thereby reforming said first gap into a second smaller gap; and (d) etching said overlying layer and said pattern material layer by ion etching employing energized particles of an inert gas, thereby forming said contiguous-element pattern from said pattern material layer.
Claim 21
Independent Claim
137 words
A method for forming a contiguous-element pattern on a substrate, said pattern being constituted of pattern elements arranged with the adjacent elements being substantially interconnected by portions thereof, comprising the steps of: (a) depositing a layer of material, from which said contiguous-element pattern is formed, on the surface of said substrate; (b) forming an etching mask pattern having a first gap on said pattern material layer; (c) depositing a pattern-widening overlying layer on the exposed surfaces of said pattern material layer and the mask pattern, so that the undulation of the mask pattern is substantially maintained, thereby reforming said first gap into a second smaller gap; and (d) etching said overlying layer and said pattern material layer by ion etching employing energized particles of an inert gas, thereby forming said contiguous-element pattern from said pattern material layer.
Claim 22
Dependent Claim
22 words
A method according to claim 17, wherein said mask pattern is a discontiguous-disk pattern, and said contiguous-element pattern is a contiguous-disk pattern.
Claim 23
Independent Claim
177 words
A method for forming a contiguous-element pattern for magnetic bubble propagation, comprising a step of forming an ion-implantation mask pattern on a surface of a magnetic thin film in which magnetic bubbles can be propagated, and a step of implanting ions on the exposed surface of said magnetic thin film, wherein said step of forming the ion-implantation mask pattern comprising thee steps of: (a) depositing a layer of material, from which said mask pattern is formed, on the surface of said magnetic thin film, (b) forming an etching mask pattern having a first gap on said mask pattern material layer; (c) depositing a pattern-widening overlying layer on the exposed surfaces of said mask pattern material layer and said etching mask pattern, so that the undulation of the etching mask pattern is substantially maintained, thereby reforming said first gap into a second smaller gap; and (d) etching said overlying layer and said mask pattern material layer by ion etching employing energized particles of an inert gas, thereby forming said ion-implantation mask pattern from said mask pattern material layer.
Claim 24
Independent Claim
177 words
A method for forming a contiguous-element pattern for magnetic bubble propagation, comprising a step of forming an ion-implantation mask pattern on a surface of a magnetic thin film in which magnetic bubbles can be propagated, and a step of implanting ions on the exposed surface of said magnetic thin film, wherein said step of forming the ion-implantation mask pattern comprising thee steps of: (a) depositing a layer of material, from which said mask pattern is formed, on the surface of said magnetic thin film, (b) forming an etching mask pattern having a first gap on said mask pattern material layer; (c) depositing a pattern-widening overlying layer on the exposed surfaces of said mask pattern material layer and said etching mask pattern, so that the undulation of the etching mask pattern is substantially maintained, thereby reforming said first gap into a second smaller gap; and (d) etching said overlying layer and said mask pattern material layer by ion etching employing energized particles of an inert gas, thereby forming said ion-implantation mask pattern from said mask pattern material layer.
Claim 25
Dependent Claim
24 words
A method according to claim 19, wherein said etching mask pattern is a discontiguous-disk pattern, and said ion-implantation mask pattern is a contiguous-disk pattern.
Claim 26
Dependent Claim
20 words
A method according to claim 19, wherein said ion-implantation mask pattern has a pattern period of 2 µm or less.
Claim 27
Dependent Claim
17 words
A method according to claim 19, wherein said ion-implantation mask pattern layer is made of gold (Au).
Claim 28
Dependent Claim
15 words
A method according to claim 22, wherein said overlying layer is made of copper (Cu).
Claim 29
Dependent Claim
15 words
A method according to claim 22, wherein said overlying layer is made of permalloy (NiFe).
Claim 30
Independent Claim
140 words
A method forming a pattern of a material on a substrate, comprising the steps of: (a) depositing a layer (A) of said pattern material on the surface of said substratei (b) forming an etching mask pattern (B) on said pattern material layer (A), so as to cover a region substantially corresponding to said pattern to be formed; (c) depositing an overlying layer (C) of material having an etching rate larger than that of the material of said mask pattern (B) on the exposed surfaces of said pattern material layer (A) and the mask pattern (B), so that the undulation of the mask pattern is substantially maintained; and (d) etching said overlying layer (C) and said pattern material layer (A) by ion etching employing energized particles of an inert gas, thereby forming said pattern (AP) from said pattern material layer (A).
Claim 31
Independent Claim
140 words
A method forming a pattern of a material on a substrate, comprising the steps of: (a) depositing a layer (A) of said pattern material on the surface of said substratei (b) forming an etching mask pattern (B) on said pattern material layer (A), so as to cover a region substantially corresponding to said pattern to be formed; (c) depositing an overlying layer (C) of material having an etching rate larger than that of the material of said mask pattern (B) on the exposed surfaces of said pattern material layer (A) and the mask pattern (B), so that the undulation of the mask pattern is substantially maintained; and (d) etching said overlying layer (C) and said pattern material layer (A) by ion etching employing energized particles of an inert gas, thereby forming said pattern (AP) from said pattern material layer (A).
Claim 32
Dependent Claim
16 words
A method according to claim 25, wherein said overlying layer (C) is made of gold (Au).
Claim 33
Independent Claim
41 words
An apparatus comprising: a vacuum chamber; a substrate holder for holding a substrate to be processed within said vacuum chamber; means for forming a layer of film on said substrate; and means for ion etching said film layer on the substrate.
Claim 34
Independent Claim
41 words
An apparatus comprising: a vacuum chamber; a substrate holder for holding a substrate to be processed within said vacuum chamber; means for forming a layer of film on said substrate; and means for ion etching said film layer on the substrate.
Claim 35
Dependent Claim
17 words
An apparatus according to claim 27, wherein said film layer forming means comprises a vapor deposition apparatus.
Claim 36
Dependent Claim
45 words
An apparatus according to claim 28, wherein said substrate holder is rotatable between a film layer forming position in which the substrate faces obliquely to said vapor deposition apparatus and an etching position in which the substrate faces substantially perpendicular to said ion etching means.
Claim 37
Dependent Claim
28 words
An apparatus according to claim 28, further comprises a dust-proof cover surrounding said vapor deposition apparatus and having an opening opposite to the substrate on the substrate holder.
Claim 38
Dependent Claim
16 words
An apparatus according to claim 27, wherein said film layer forming means comprises a sputtering apparatus.
Claim 39
Dependent Claim
45 words
An apparatus according to claim 31, wherein said sputtering apparatus comprises a target which is movable between a sputtering position being placed between said substrate holder and said etching means and an etching position permitting the film layer to be etched by said etching means.
References Cited (Backward Citations)
No citation records indexed.
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