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EP0146040A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Controlled electronic switching device for the suppression of transients

Assignee: STMicroelectronics SRL
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Filing: 1984-11-29
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Granted: —
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Expires: 2004-11-29
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Abstract

Abstract This controlled electronic switching device for the suppression of transients can change over from a non-conductive state to a conductive state at lower triggering current levels than conventional devices while retaining unaltered its response characteristics to variations in the voltage applied thereacross. The device comprises a main switch (20, 21, 26, 24) which is triggered by a parallel-connected auxiliary switch (22, 23, 27, 25) having smaller junction areas and a higher capacitive current shunt resistance (R') (resistance between base and emitter) than the main switch, thereby it turns on at lower control currents from the gate electrode (G 1 , G 2 ) for a given response to voltage variations.

Inventors

  • 👤 Franco Bertotti
  • 👤 Paolo Ferrari
  • 👤 Mario Foroni
  • 👤 Sergio Garue

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-30 22:56
CPC Classifications
H; H10; H10D; H10D18/00; H10D18/221; H10D62/00; H10D62/10; H10D62/13; H10D62/141; H10D62/148

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 160 words
A controlled electronic switching device for the suppression of transients, comprising a main controlled solid state static switch (20,21,26) including several semiconductor layers (30-32,34) having two conductivity types alternating with one another and forming junctions, said main switch being provided with a resistive connection (24;36) between two adjacent layers (32,34) of different conductivity type, characterized in that it comprises at least a second, auxiliary controlled solid state static switch (22,23,27) including several semiconductor layers (30,31,33,35) having two conductivity types alternating with one another and forming junctions, said auxiliary switch being provided with a resistive connection (25;37) between two adjacent layers (33,35) of different conductivity type, being connected in parallel with said main switch (30-32,34) and having the area of at least one of said junction (31-33) smaller than the area of a corresponding junction (31-32) in said main switch, the resistive connection (25;37) of said auxiliary switch having a higher resistance than the resistive connection (24;36) of said main switch.
Claim 2
Dependent Claim 160 words
A controlled electronic switching device for the suppression of transients, comprising a main controlled solid state static switch (20,21,26) including several semiconductor layers (30-32,34) having two conductivity types alternating with one another and forming junctions, said main switch being provided with a resistive connection (24;36) between two adjacent layers (32,34) of different conductivity type, characterized in that it comprises at least a second, auxiliary controlled solid state static switch (22,23,27) including several semiconductor layers (30,31,33,35) having two conductivity types alternating with one another and forming junctions, said auxiliary switch being provided with a resistive connection (25;37) between two adjacent layers (33,35) of different conductivity type, being connected in parallel with said main switch (30-32,34) and having the area of at least one of said junction (31-33) smaller than the area of a corresponding junction (31-32) in said main switch, the resistive connection (25;37) of said auxiliary switch having a higher resistance than the resistive connection (24;36) of said main switch.
Claim 3
Dependent Claim 41 words
A device according to Claim 1, characterized in that said switches comprise SC8's defined by four layers (30-35) having two alternating conductivity types and metal layers (36,37) contacting two adjacent layers (32,34;respect.33,35) of different conductivity types and forming said resistive connections.
Claim 4
Independent Claim 178 words
A device according to the preceding claims, characterized in.that it comprises a first layer (30) having a first conductivity type, a second layer (31) having a second conductivity type opposed to the first, and contacting said first layer, a third layer (32,33) including several regions of different cross-section dimension and separate from one another, having said first conductivity type and coutacting said second layer (31), a fourth layer (34,35) including several mutually separated regions, having said second conductivity type and contacting said regions of said third layer (32,33), metal layers (36,37) each in contact with and connecting one (32 respect. 33) of said regions of said third layer to regions (34 respect. 35) of said fourth layer contacting said one of said regions of said third layer, and bridging layers (38) interconnecting said metal layers (36,37) together, the device further comprising two terminal (A,K) connections in contact, respectively, with said first layer and said metal layers and control electrodes (G 2 ,G 1 ) respeo- tively connected to said second layer (31) and said third layer regions (33).

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