EP0145403A2
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EP
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Semiconducting multilayered structures and systems and methods for synthesizing the structures and devices incorporating the structures
Assignee: Energy Conversion Devices Inc
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Filing: 1984-11-27
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Granted: —
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Expires: 2004-11-27
Abstract
Abstract A new class of synthesized semiconducting multiple layer materials, structures, and devices and apparatus and methods for synthesizing the structures. At least one layer (138a) of the multiple layer structure (138) is a disordered semiconductor material. Multiple layer structures can form one or more regions of improved photoresponsive and photovoltaic single and tandem cells, thin film transistors and thermoelectric devices. The multiple layer structures provide a means of electronically doping semiconductor device structures without adding substitutional dopant impurities.
Inventors
- 👤 Hellmut Fritzsche
- 👤 Stanford R. Ovshinsky
- 👤 David Adler
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 14:07
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C14/00; C23C14/22; C23C14/56; C23C14/568; H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6746; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8163; H10D62/8171; H10F; H10F71/00; H10F71/10; H10F71/103; H10F71/134; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
83 words
An improved semiconductor structure (138) having a multiple layer structure characterized by a plurality of layers (138a, 138b, ...) formed on one another, at least one of said layers (138a) being formed from a first layer material comprising a disordered semiconductor material, and at least a second layer (138b) being formed from a material selected from the group consisting of materials having a conductivity type, magnitude and/or polarity of fixed charge capability and/or band gap different from that of said first layer material.
Claim 2
Dependent Claim
83 words
An improved semiconductor structure (138) having a multiple layer structure characterized by a plurality of layers (138a, 138b, ...) formed on one another, at least one of said layers (138a) being formed from a first layer material comprising a disordered semiconductor material, and at least a second layer (138b) being formed from a material selected from the group consisting of materials having a conductivity type, magnitude and/or polarity of fixed charge capability and/or band gap different from that of said first layer material.
Claim 3
Dependent Claim
119 words
An improved photoresponsive device (140) having superimposed sections (144, 146, 148) of various materials including at least one section having an active photoresponsive region (146) therein upon which radiation can impinge to produce charge carriers, characterized in that at least one of said sections (144, 146, 148) includes: a multiple layer semiconductor structure including a plurality of layers formed on one another, at least one of said layers being formed from a first layer material comprising a disordered semiconductor material, and at least a second layer being formed from a material selected from the group consisting of materials having conductivity type, magnitude and/or polarity of fixed charge capability and/or band gap different from that of said first layer material.
Claim 4
Dependent Claim
119 words
An improved photoresponsive device (140) having superimposed sections (144, 146, 148) of various materials including at least one section having an active photoresponsive region (146) therein upon which radiation can impinge to produce charge carriers, characterized in that at least one of said sections (144, 146, 148) includes: a multiple layer semiconductor structure including a plurality of layers formed on one another, at least one of said layers being formed from a first layer material comprising a disordered semiconductor material, and at least a second layer being formed from a material selected from the group consisting of materials having conductivity type, magnitude and/or polarity of fixed charge capability and/or band gap different from that of said first layer material.
Claim 5
Dependent Claim
30 words
The device of claim 2 further characterized in that said sections include at least one region of fixed conductivity type therein, said region being formed by said multiple layer structure.
Claim 6
Dependent Claim
25 words
The structure of claims 1 or 2 further characterized in that said first layer material includes silicon and at least one band gap reducing element.
Claim 7
Dependent Claim
21 words
The structure of claim 4 characterized in that said second layer includes silicon and at least one of nitrogen and oxygen.
Claim 8
Dependent Claim
24 words
The structure of claims 1 or 2 characterized in that said first layer material includes germanium and at least one band gap adjusting element.
Claim 9
Dependent Claim
21 words
The structure of claim 6 characterized in that said second layer includes silicon and at least one of nitrogen and oxygen.
Claim 10
Independent Claim
135 words
A method of depositing an improved semiconductor on a substrate, characterized in: providing a substrate (98) mounted on substrate holding means (16); providing at least a pair of mutually isolated deposition chamber means (12, 14); movably coupling said substrate holding means (16) and said chamber means (12, 14) for selective disposition of said substrate (98) within each of said chamber means (12, 14); moving said substrate holding means (16) and chamber means (12, 14) relative to one another to selectively dispose said substrate in selected ones of said chamber means; and depositing at least one different type material layer on said substrate in at least one of said chamber-means to form a plurality of layers of said different type materials on one another, at least one of said material layers being a disordered semiconductor material.
Claim 11
Independent Claim
135 words
A method of depositing an improved semiconductor on a substrate, characterized in: providing a substrate (98) mounted on substrate holding means (16); providing at least a pair of mutually isolated deposition chamber means (12, 14); movably coupling said substrate holding means (16) and said chamber means (12, 14) for selective disposition of said substrate (98) within each of said chamber means (12, 14); moving said substrate holding means (16) and chamber means (12, 14) relative to one another to selectively dispose said substrate in selected ones of said chamber means; and depositing at least one different type material layer on said substrate in at least one of said chamber-means to form a plurality of layers of said different type materials on one another, at least one of said material layers being a disordered semiconductor material.
Claim 12
Dependent Claim
28 words
The method of claim 8 characterized in depositing at least two different type material layers successively on one another in at least one of said chamber means (12).
Claim 13
Dependent Claim
27 words
The method of claim 8 characterized in depositing said material layers in at least one of said chambers (12) by plasma decomposition of a feed gas mixture.
Claim 14
Dependent Claim
34 words
The method of claim 10 characterized in depositing at least two different type material layers successively on one another in at least one of said chamber means (12) by changing said feed gas mixture.
Claim 15
Dependent Claim
34 words
The method of claim 8 including rotatably mounting said substrate holding means (16) and rotating said substrate holding means (16) to dispose said substrate (98) in each of said chamber means (12, 14) alternatively.
Claim 16
Dependent Claim
92 words
Apparatus for depositing an improved semiconductor, characterized by: substrate holding means (16) for holding at least one substrate (98); at least a pair of mutually isolated deposition chamber means (12, 14) for depositing materials on said substrate (98); means for movably coupling said substrate holder (16) and said chamber means (12, 14) together for selective disposition on said substrate (98) within each of said chamber means (12, 14); and means for moving said substrate holding means (16) to selectively dispose said substrate (98) in selected ones of said chamber means (12, 14).
Claim 17
Dependent Claim
92 words
Apparatus for depositing an improved semiconductor, characterized by: substrate holding means (16) for holding at least one substrate (98); at least a pair of mutually isolated deposition chamber means (12, 14) for depositing materials on said substrate (98); means for movably coupling said substrate holder (16) and said chamber means (12, 14) together for selective disposition on said substrate (98) within each of said chamber means (12, 14); and means for moving said substrate holding means (16) to selectively dispose said substrate (98) in selected ones of said chamber means (12, 14).
Claim 18
Dependent Claim
31 words
The apparatus of claim 13 further characterized by means for depositing at least two different type material layers successively on one another in at least one of said chamber means (12).
Claim 19
Dependent Claim
29 words
The apparatus of claim 13 characterized by means for depositing said material layers in at least one of said chambers (12) by plasma decomposition of a feed gas mixture.
Claim 20
Dependent Claim
36 words
The apparatus of claim 15 characterized by means for depositing at least two different type material layers successively, on one another, in at least one of said chamber means (12) by changing said feed gas mixture.
Claim 21
Dependent Claim
37 words
The apparatus of claim 13 characterized in that means for moving said substrate holding means (16) include means for rotating said substrate holding means (16) to selectively dispose said substrate (98) in selected chamber means (12, 14).
References Cited (Backward Citations)
No citation records indexed.
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