EP0144866A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device comprising a substrate
Assignee: Toshiba Corp
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Filing: 1984-11-22
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Granted: —
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Expires: 2004-11-22
Abstract
Abstract @ A semiconductor device which comprises a copper base plate (4) bonded to a C.D.B. substrate (2) is allowed to have a thickness at least over 35 times the extent to which the copper base plate is extended when thermally bonded to said C.D.B. substrate.
Inventors
- 👤 Keizo C/O Patent Division Tani
- 👤 Yasumasa C/O Patent Division Saito
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 17:28
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/6875; H10W40/00; H10W40/20; H10W40/25; H10W40/255; H10W72/00; H10W72/071; H10W72/073; H10W72/07331; H10W72/07337; H10W72/30; H10W72/351; H10W72/353; H10W72/354; H10W72/50; H10W72/551; H10W72/552; H10W72/5524; H10W72/851; H10W72/874; H10W72/884; H10W90/00; H10W90/701; H10W90/731; H10W90/734; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
89 words
A semiconductor device which comprises: a substrate constructed by directly bonding a sheet of copper or copper alloy to at least one plane of a nonmetallic refractory plate; a semiconductor chip fitted to one plane of said substrate; and a copper base plate bonded to the other plane of said substrate to concurrently act as a heat-releasing plate, characterized in that said copper base plate (4) has a thickness at least 35 times the thermal expansion rate of said copper base plate when thermally bonded to said substrate (2).
Claim 2
Dependent Claim
89 words
A semiconductor device which comprises: a substrate constructed by directly bonding a sheet of copper or copper alloy to at least one plane of a nonmetallic refractory plate; a semiconductor chip fitted to one plane of said substrate; and a copper base plate bonded to the other plane of said substrate to concurrently act as a heat-releasing plate, characterized in that said copper base plate (4) has a thickness at least 35 times the thermal expansion rate of said copper base plate when thermally bonded to said substrate (2).
Claim 3
Dependent Claim
41 words
The semiconductor device according to claim 1, characterized in that said copper base plate has a semiconductor chip (3) placed thereon, and an opening of a case (7) is fitted to the base plate with an epoxy resin (9) set therein.
Claim 4
Dependent Claim
38 words
The semiconductor device according to claim 1, characterized in that said copper base plate is prepared from copper or a copper alloy whose thermal expansion rate ranges from 16 x 10 -6 to 22 x 10 -6 .
Claim 5
Dependent Claim
36 words
The semiconductor device according to claim 1, characterized in that said base plate is provided with a screw hole (12) at both end portions to effect the fitting of said base plate to a fixing member.
References Cited (Backward Citations)
No citation records indexed.
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