EP0142252A2
Expired / Lapsed
EP
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Method for producing semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1984-09-20
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Granted: —
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Expires: 2004-09-20
Abstract
Abstract A method for producing a semiconductor device including the steps of forming an insulating layer (5) on a semiconductor (1); forming a first layer (6) of an electrode material on the insulating layer (5); introducing impurities into an impurity region (7) of the semiconductor substrate (1) through the first layer of the electrode material (6) and the insulating layer (5) by using an ion implanting process; forming a second layer of an electrode material (11) on the first layer (6) thereof; and forming on the impurity region (7) an electrode pattern consisting of the first and second layers (6,11) of the electrode material and having the insulating layer (5) below it by selectively etching the second and the first layers of the electrode material.
Inventors
- 👤 Yoshihiro Oshikawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 15:04
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10B41/00; H10D; H10D1/00; H10D1/01; H10D1/045; H10D1/047; H10D30/00; H10D30/60; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; H10P30/21; H10P30/212
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
89 words
A method for producing a semiconductor device, the method comprising the steps of forming an insulating layer (5) on a semiconductor substrate (1); forming a first layer (6) of an electrode material on the insulating layer (5); introducing impurities into an impurity region (7) of the semiconductor substrate (1) through the first layer (6) of the electrode material and the insulating layer (5) by using an ion implanting process; and forming on the impurity region (7) an electrode pattern by selectively etching the first layer of the electrode material.
Claim 2
Independent Claim
89 words
A method for producing a semiconductor device, the method comprising the steps of forming an insulating layer (5) on a semiconductor substrate (1); forming a first layer (6) of an electrode material on the insulating layer (5); introducing impurities into an impurity region (7) of the semiconductor substrate (1) through the first layer (6) of the electrode material and the insulating layer (5) by using an ion implanting process; and forming on the impurity region (7) an electrode pattern by selectively etching the first layer of the electrode material.
Claim 3
Dependent Claim
25 words
A method according to claim 1, wherein the first layer of an electrode material (6) has a thickness of between 500 and 700 A .
Claim 4
Dependent Claim
49 words
A method according to claim 1 or claim 2, further comprising, subsequent to the introduction of impurities, forming a second layer (11) of an electrode material on the first layer (6), the electrode pattern being formed by selectively etching the first and second layers (6,11) of the electrode material.
Claim 5
Dependent Claim
23 words
A method according to claim 3, wherein the second layer (11) of electrode material has a thickness of between 3000 and 4000 A.
Claim 6
Dependent Claim
23 words
A method according to claim 3 or claim 4, wherein the electrode material of the first and second layers (6,11) is the same.
Claim 7
Independent Claim
43 words
A method according to any of the preceding claims, wherein the first layer (6) and the second layer (11) of an electrode material respectively consist of materials selected from the groups consisting of polycrystalline silicon, refractory metals, or metal silicides of refractory metals.
Claim 8
Dependent Claim
16 words
A method according to claim 5, wherein the high melting metals are molybdenum, tungsten, and titanium.
Claim 9
Independent Claim
19 words
A method according to any of the preceding claims, wherein the semiconductor substrate (1) is a p-type semiconductor substrate.
Claim 10
Independent Claim
19 words
A method according to any of the preceding claims, wherein the impurities are selectively introduced to the semiconductor substrate.
Claim 11
Dependent Claim
21 words
10 A method for producing a dynamic RAM, an EEPROM or a MIS transistor according to any of the preceding claims.
References Cited (Backward Citations)
No citation records indexed.
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