Patent US2219834A successfully refreshed from Google Patents.
EP0139366A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of manufacturing a soldi-state image pickup device
Assignee: Toshiba Corp
•
Filing: 1984-08-06
•
Granted: —
•
Expires: 2004-08-06
Abstract
Abstract When a "two-level" solid state image pickup device is manufactured, part of a first metallic electrode (28a) electrically connected to a signal storage region (24b) is made to project to the highest position above a substrate on which it is formed. A coating of an organic insulating film (29) is then applied to produce a flat surface. The entire surface of the organic film is then etched to expose the projections (A) of the first metallic electrode (28a) and a second metallic electrode (28b) constituting a pixel electrode is connected to the first electrode (28a) at the exposed portion thereof.
Inventors
- 👤 Nozomu Patent Division Toshiba Corp. Harada
- 👤 Yoshiaki Patent Division Komatsubara
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 07:41
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/159; H10F39/80; H10F39/805; Y; Y10; Y10S; Y10S148/00; Y10S148/075; Y10S148/172
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
186 words
A method of manufacturing a solid state image pickup device including the steps of: (a) forming on a semiconductor substrate (21), a signal storage region (24a, 24b) for each pixel, and corresponding signal charge read-out regions (25); (b) depositing a first insulating film (23) on the signal storage regions and signal read-out regions; (c) forming contact holes in the first insulating film; (d) forming first metallic electrodes (28a) on the first insulating film so as to make electrical connections to the signal storage regions through the contact holes; (e) depositing a second insulating film (29) and forming contact holes in the said second insulating film; (f) . forming second metallic electrodes (28b) constituting the pixel electrodes to be connected to the first metallic electrodes through the contact holes; and (g) depositing a photoconductive film (30) over the whole surface and forming a transparent conductive layer (31) on the photoconductive film; characterised in that the first metallic electrodes (28a) are formed with projections (A), and the contact holes in the second insulating film are formed by etching away the said film until the said projections are exposed.
Claim 2
Independent Claim
186 words
A method of manufacturing a solid state image pickup device including the steps of: (a) forming on a semiconductor substrate (21), a signal storage region (24a, 24b) for each pixel, and corresponding signal charge read-out regions (25); (b) depositing a first insulating film (23) on the signal storage regions and signal read-out regions; (c) forming contact holes in the first insulating film; (d) forming first metallic electrodes (28a) on the first insulating film so as to make electrical connections to the signal storage regions through the contact holes; (e) depositing a second insulating film (29) and forming contact holes in the said second insulating film; (f) . forming second metallic electrodes (28b) constituting the pixel electrodes to be connected to the first metallic electrodes through the contact holes; and (g) depositing a photoconductive film (30) over the whole surface and forming a transparent conductive layer (31) on the photoconductive film; characterised in that the first metallic electrodes (28a) are formed with projections (A), and the contact holes in the second insulating film are formed by etching away the said film until the said projections are exposed.
Claim 3
Dependent Claim
20 words
A method according to claim 1 in which the second insulating film is formed with a substantially flat top surface.
Claim 4
Dependent Claim
43 words
A method of manufacturing a solid state image pickup device according to claim 1 or claim 2, wherein the material of said organic insulating film (29) is polyimide and a single layer of the polyimide film is applied to produce a flat surface.
Claim 5
Dependent Claim
69 words
A method of manufacturing a solid state image pickup device according to claim 1 or claim 2, wherein said second insulating film (29) is a film consisting of a combination of a polyimide film (29a) and a photoresist film (29b), said polyimide film (29a) being applied so as to cover the projections of said first metallic electrodes, and said photoresist film then being applied to produce a flat surface.
Claim 6
Independent Claim
36 words
A method of manufacturing a solid state image pick up device according to any preceding claim further including the step of selectively burying an electrically insulated conductive electrode (32) under the projections of said.first metallic electrodes.
Claim 7
Independent Claim
44 words
A method of manufacturing a solid state image pick up device according to any preceding claim, wherein said first insulating film (27) includes a field oxide film (23) projecting upwards in conformity with the shape of the projections of said first metallic electrodes (28a).
Claim 8
Independent Claim
27 words
A method of manufacturing a solid state image pickup device according to any preceding claim wherein said signal read-out regions (24a, 26a, 26b) comprise charge coupled devices.
Claim 9
Independent Claim
24 words
A method of manufacturing a solid state image pickup device according to any preceding claim, wherein said photoconductive film (30) consists of amorphous silicon.
Claim 10
Dependent Claim
14 words
A solid state image pickup device produced by the method of any preceding claim.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.