Patent US4206578A successfully refreshed from Google Patents.
EP0138563A2
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Lateral transistors
Assignee: Fujitsu Ltd
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Filing: 1984-10-10
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Granted: —
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Expires: 2004-10-10
Abstract
Abstract A lateral bipolar transistor having a silicon on insulator substrate structure, having a base region (13, 15, 17), a base contact region (16), a collector region (14), and a emitter region (12). The base region comprises a first base region (13), with a narrow width, forming a base-emitter junctiton and a base-collector junction. The base region also comprises a second base region (17) connecting the first base region (13) and the base contact region (16) with a greater width than the first base region (13) and forming a base-collector junction.
Inventors
- 👤 Motoo C/O Fujitsu Limited Nakano
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 13:09
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/041; H10W; H10W90/00; H10D10/311; H10D10/60; H10D48/00; H10D48/30; H10D48/32; H10D48/34; H10D48/345; H10D62/00; H10D62/10; H10D62/17; H10D62/177; H10D62/184
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
91 words
A lateral bipolar transistor, having a structure with a base region, a base contact region, an emitter region and a collector region, the base region comprising: a first base region forming an emitter-base junction with the emitter region and a base-collector junction with the collector region; and a second base region connecting the first base region to the base contact region and forming a base-collector junction with the collector region, the base region, the emitter region and the collector region each being in surface-to-surface contact with an underlying insulator substrate portion.
Claim 2
Dependent Claim
91 words
A lateral bipolar transistor, having a structure with a base region, a base contact region, an emitter region and a collector region, the base region comprising: a first base region forming an emitter-base junction with the emitter region and a base-collector junction with the collector region; and a second base region connecting the first base region to the base contact region and forming a base-collector junction with the collector region, the base region, the emitter region and the collector region each being in surface-to-surface contact with an underlying insulator substrate portion.
Claim 3
Dependent Claim
14 words
A transistor as claimed in claim 1, having a silicon on insulator substrate structure.
Claim 4
Dependent Claim
24 words
A transistor as claimed in claim 1 or 2, wherein the second base region has a lower longitudinal resistance than the first base region.
Claim 5
Dependent Claim
38 words
A transistor as claimed in claim 1, 2 or 3, wherein the lower longitudinal resistance of the second base region is provided by virtue of the second base region having a greater width than the first base region.
Claim 6
Dependent Claim
23 words
A transistor as claimed in claim 1, 2, 3 or 4, wherein the second base region divides the collector region into sub-collector regions.
Claim 7
Dependent Claim
26 words
A transistor as claimed in any preceding claim, wherein the second base region joins the first base region between opposite ends of the first base region.
Claim 8
Dependent Claim
30 words
A transistor as claimed in any one of claim 1 to 4, wherein the second base region joins the first base region at one end of the first base region.
Claim 9
Dependent Claim
19 words
A transistor as claimed in any preceding claim, wherein the base region includes a plurality of second base regions.
Claim 10
Dependent Claim
23 words
A bipolar lateral transistor as claimed in any preceding claim, wherein the collector region or each sub-collector region has a genially rectangular shape.
Claim 11
Dependent Claim
41 words
A lateral bipolar transistor formed of two lateral bipolar transistor structures as set forth in any preceding claim joined by a commonly possessed collector region, or joined by a commonly possessed emitter region, or joined by a commonly possessed base-contact region.
References Cited (Backward Citations)
No citation records indexed.
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