EP0138023A2
Expired / Lapsed
EP
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Semiconductor vibration detection device with lever structure
Assignee: Nissan Motor Co Ltd
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Filing: 1984-09-04
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Granted: —
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Expires: 2004-09-04
Abstract
Abstract A semiconductor vibration detection device according to the present invention includes a movable lever which is supported by the semiconductor base with at lease one of its ends and includes a vibrating part that extends, with an incorporated electrode, approximately parallel to the semiconductor base, and a fixed electrode layer which is provided on the semiconductor base opposite to the movable lever. The movable lever has a triple layer structure in which the middle section is a polysilicon layer that is formed to be alkali-etching-proof and a top and a bottom layers that are sandwiching the middle layer are also of alkali-etching-proof.
Inventors
- 👤 Shigeo Hoshino
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 12:03
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/50; G; G01; G01H; G01H11/00; G01H11/06; G01P; G01P15/00; G01P15/02; G01P15/08; G01P15/0802; G01P2015/0805; G01P2015/0822; G01P2015/0825; G01P2015/0828; H04; H04R; H04R19/00; H04R19/005
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
77 words
A vibration detection device for detecting machinery vibrations, comprising: a semiconductor base ; a movable lever installed on said semiconductor base in the from of a contilever to have a predetermined frequency of natural vibration, said movable lever includes two alkali-etching-proof nitride layers and an alkali-etching-proof high density P + polysilicon layer which is vertically sandwiched by the alkali-etching-proof nitride layers ; and a P region formed on said semiconductor base opposite to the movable lever .
Claim 2
Dependent Claim
77 words
A vibration detection device for detecting machinery vibrations, comprising: a semiconductor base ; a movable lever installed on said semiconductor base in the from of a contilever to have a predetermined frequency of natural vibration, said movable lever includes two alkali-etching-proof nitride layers and an alkali-etching-proof high density P + polysilicon layer which is vertically sandwiched by the alkali-etching-proof nitride layers ; and a P region formed on said semiconductor base opposite to the movable lever .
Claim 3
Dependent Claim
30 words
A vibration detection device as claimed in claim 1, in which the P lregion is arranged to form a condenser together with the high density P + polysilicon layer .
Claim 4
Dependent Claim
29 words
A vibration detection device as claimed in claim 2, in which the P + region is opposed to said movable lever through a thermally oxidized SiO 2 layer .
Claim 5
Dependent Claim
26 words
A vibration detection device as claimed in claim 1, in which the high density P + polysilicon layer has thickness between 5000 A and 10000 A.
Claim 6
Dependent Claim
22 words
A vibration detection device as claimed in claim 4, in which the bottom nitrode layer has a thickness of about 300 A.
Claim 7
Dependent Claim
26 words
A vibration detection device as claimed in claim 5, in which the top nitride layer is about 20 A thicker than the bottom nitride layer .
Claim 8
Dependent Claim
32 words
A vibration detection device as claimed in claim 1, further comprising a high density P + polysilicon spacer arranged at a supporting region of the movable lever for reinforcing the supporting region.
Claim 9
Independent Claim
103 words
A method of manufacturing a semiconductor vibration detection device, comprising the steps of: forming a p region in a semiconductor base of N type Si; forming an impurity-free polysilicon spacer on the surface of the semiconductor base ; forming a bottom nitrode layer on the impurity-free polysilicon spacer ; forming a polysilicon layer on the bottom nitrode layer ; doping a high density boron to the polysilicon layer to provide a high density P polysilicon layer ; forming a top nitrode layer on the high density P polysilicon layer ; etching to form a cantilever pattern ; and etching the polysilicon spacer .
Claim 10
Independent Claim
103 words
A method of manufacturing a semiconductor vibration detection device, comprising the steps of: forming a p region in a semiconductor base of N type Si; forming an impurity-free polysilicon spacer on the surface of the semiconductor base ; forming a bottom nitrode layer on the impurity-free polysilicon spacer ; forming a polysilicon layer on the bottom nitrode layer ; doping a high density boron to the polysilicon layer to provide a high density P polysilicon layer ; forming a top nitrode layer on the high density P polysilicon layer ; etching to form a cantilever pattern ; and etching the polysilicon spacer .
Claim 11
Dependent Claim
37 words
A manufacturing method as claimed in claim 8, in which the high density P polysilicon layer is formed by doping the polysilicon layer with a high density bron by the impurity diffusion method using BBr 3 .
Claim 12
Independent Claim
149 words
A method of manufacturing a semiconductor vibration detection device, comprising the steps of: forming a P + region in a semiconductor base of N type Si; forming an impurity-free polysilicon spacer on the surface of the semiconductor base ; forming a bottom nitrode layer on the impurity-free polysilicon spacer ; forming an ion implantation masking by photo-etching through removal of a SiO 2 layer at a reinforcing region for a movabe lever; forming a high density P + polysilicon spacer in the unmasked portion of the polysilicon spacer by injection of boron ions; forming a polysilicon layer on the bottom nitrode layer ; doping a high density boron to the polysilicon layer to provide a high density P + polysilicon layer ; forming a top nitrode layer on the high density P + polysilicon layer ; etching to form a cantilever pattern ; and etching the polysilicon spacer .
Claim 13
Independent Claim
149 words
A method of manufacturing a semiconductor vibration detection device, comprising the steps of: forming a P + region in a semiconductor base of N type Si; forming an impurity-free polysilicon spacer on the surface of the semiconductor base ; forming a bottom nitrode layer on the impurity-free polysilicon spacer ; forming an ion implantation masking by photo-etching through removal of a SiO 2 layer at a reinforcing region for a movabe lever; forming a high density P + polysilicon spacer in the unmasked portion of the polysilicon spacer by injection of boron ions; forming a polysilicon layer on the bottom nitrode layer ; doping a high density boron to the polysilicon layer to provide a high density P + polysilicon layer ; forming a top nitrode layer on the high density P + polysilicon layer ; etching to form a cantilever pattern ; and etching the polysilicon spacer .
References Cited (Backward Citations)
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