EP0135942A2
Expired / Lapsed
EP
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Semiconductor memory and method of producing the same
Assignee: Hitachi Ltd
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Filing: 1984-09-28
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Granted: —
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Expires: 2004-09-28
Abstract
Abstract A semiconductor memory uses the side wall part of a recess (17) dug in a Si substrate (10, 25) as the major part of the electrode surface of a capacitor, whereby the electrode area is enlarged without enlarging a plane area. Thus, a capacitor (8, 18, 19, 25) having a large capacitance can be attained without increasing the breakdown of an insulator film (18, 19) ascribable to the thinning of the insulator film. In addition, a vertical switching transistor (4, 12, 15, 21) is formed on the Si substrate (10, 25), whereby the Si substrate can be entirely utilized for the formation of the capacitor.
Inventors
- 👤 Hideo Sunami
- 👤 Makoto Ohkura
- 👤 Masanobu Miyao
- 👤 Kikuo Kusukawa
- 👤 Masahiro Moniwa
- 👤 Shinichiro Kimura
- 👤 Terunori Warabisako
- 👤 Tokuo Kure
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 04:22
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/39; H10B12/395; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/10
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
76 words
A semiconductor memory characterised by comprising a plurality of memory cells each of which utilizes as a part of a storage capacitance, surfaces including side walls of an island region (25) that is enclosed with a recess (17) provided in a surface region of a semiconductor substrate (10) and that is isolated from the other parts, and each of which includes a switching transistor (4, 12, 15, 21) that is formed perpendicularly to said substrate (10).
Claim 2
Dependent Claim
76 words
A semiconductor memory characterised by comprising a plurality of memory cells each of which utilizes as a part of a storage capacitance, surfaces including side walls of an island region (25) that is enclosed with a recess (17) provided in a surface region of a semiconductor substrate (10) and that is isolated from the other parts, and each of which includes a switching transistor (4, 12, 15, 21) that is formed perpendicularly to said substrate (10).
Claim 3
Independent Claim
93 words
A method of producing a semiconductor memory characterised by comprising the step of forming recesses (17) in a semiconductor substrate (10) and forming a plurality of pillar-like island regions (25)_isolated from the other parts by said recesses (17), the step of forming insulator films (18, 19) on side walls and upper walls of said pillar-like island regions (25) and forming plate electrodes (8) on said insulator films (18, 19), and the step of forming switching transistors (4, 12, 15, 21) perpendicular to said substrate (10), within or above said pillar-like island regions (25).
Claim 4
Independent Claim
93 words
A method of producing a semiconductor memory characterised by comprising the step of forming recesses (17) in a semiconductor substrate (10) and forming a plurality of pillar-like island regions (25)_isolated from the other parts by said recesses (17), the step of forming insulator films (18, 19) on side walls and upper walls of said pillar-like island regions (25) and forming plate electrodes (8) on said insulator films (18, 19), and the step of forming switching transistors (4, 12, 15, 21) perpendicular to said substrate (10), within or above said pillar-like island regions (25).
References Cited (Backward Citations)
No citation records indexed.
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