EP0134364A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
System and method for eliminating short and latent short circuit current paths in photovoltaic devices
Assignee: Energy Conversion Devices Inc
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Filing: 1983-10-21
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Granted: —
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Expires: 2003-10-21
Abstract
Abstract Systems (54) and methods for detecting and eliminating latent (58,59) and existing short circuit current paths through photovoltaic devices (55) of the type including at least one semiconductor region (62) overlying a substrate (61) and a layer of conductive light transmissive material (64) overlying the at least one semiconductor region (62) are disclosed. The latent paths (58, 59) are first converted to existing short circuit current paths by applying a bias voltage to the devices. The short circuit current paths which are eliminated extend through the at least one semiconductor region (62) from the substrate (61) to the layer of conductive light transmissive material (64). The resistivity of the short circuit current paths is increased substantially at the interface between the conductive light transmissive material (64) and the semiconductor region (62) by isolating electrically the conductive light transmissive material (64) from the short circuit current path.
Inventors
- 👤 Masatsugu Izu
- 👤 Vincent David Cannella
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 13:11
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/135; H10F71/10; H10P; H10P14/00; H10P14/60; H10P14/68; H10F10/00; H10F10/10; H10F10/17; H10F71/107; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
116 words
A method of actuating potential and then eliminating the actuated and existing short circuit current paths through a photovoltaic device which has a semiconductor region (62) overlying a substrate (61) and having an interface surface (75) opposite said substrate (61) and a layer of transparent conductive material (64) overlying said semiconductor region interface surface (75), said potential and existing short circuit current paths extending from the substrate through the semiconductor region to said interface surface (75), ;characterized by: applying a bias to said device to convert latent potential defects to existing short circuit current paths and thereafter increasing substantially the resistivity of said short circuit current paths selectively at the interface surface of said semiconductor region.
Claim 2
Independent Claim
116 words
A method of actuating potential and then eliminating the actuated and existing short circuit current paths through a photovoltaic device which has a semiconductor region (62) overlying a substrate (61) and having an interface surface (75) opposite said substrate (61) and a layer of transparent conductive material (64) overlying said semiconductor region interface surface (75), said potential and existing short circuit current paths extending from the substrate through the semiconductor region to said interface surface (75), ;characterized by: applying a bias to said device to convert latent potential defects to existing short circuit current paths and thereafter increasing substantially the resistivity of said short circuit current paths selectively at the interface surface of said semiconductor region.
Claim 3
Dependent Claim
18 words
A method according to claim 1, wherein applying a bias to said device includes applying a reverse bias.
Claim 4
Dependent Claim
21 words
A method according to claim 1, wherein applying a bias to said device includes applying an alternating forward and reverse bias.
Claim 5
Independent Claim
22 words
A method according to any preceding claim, wherein the layer of conductive light transmissive material is deposited prior to applying said bias.
Claim 6
Independent Claim
29 words
A method according to any preceding claim, further characterized by the initial step of locating said short circuit current path and thereafter increasing substantially the resistivity of said path.
Claim 7
Independent Claim
144 words
A system for actuating potential and then eliminating the actuated and existing short circuit current paths through a photovoltaic device which has a semiconductor region (62) overlying a substrate (61) and having an interface surface (75) opposite said substrate (61) and a layer of transparent conductive material (64) overlying said semiconductor region interface surface (75), said potential and existing short circuit current paths extending from the substrate through the semiconductor region to said interface surface (75), said system being characterized by: means (51, 54, 88, 120) for applying a bias to said device (55, 60, 80, 118, 122, 150) to convert latent potential defects (58, 59) to existing short circuit current paths (72, 83, 138, 153) and means (51, 54, 88, 120) for increasing substantially the resistivity of said short circuit current paths selectively at the interface surface (75) of said semiconductor region (62).
Claim 8
Independent Claim
144 words
A system for actuating potential and then eliminating the actuated and existing short circuit current paths through a photovoltaic device which has a semiconductor region (62) overlying a substrate (61) and having an interface surface (75) opposite said substrate (61) and a layer of transparent conductive material (64) overlying said semiconductor region interface surface (75), said potential and existing short circuit current paths extending from the substrate through the semiconductor region to said interface surface (75), said system being characterized by: means (51, 54, 88, 120) for applying a bias to said device (55, 60, 80, 118, 122, 150) to convert latent potential defects (58, 59) to existing short circuit current paths (72, 83, 138, 153) and means (51, 54, 88, 120) for increasing substantially the resistivity of said short circuit current paths selectively at the interface surface (75) of said semiconductor region (62).
Claim 9
Dependent Claim
34 words
A system according to claim 6, wherein said bias means (51, 54, 88, 120) include means (56, 57, 66, 70, 124, 132) for applying a reverse bias across said device (55, 60, 122, 150).
Claim 10
Dependent Claim
33 words
A system according to claim 6, further wherein said bias means (51, 54, 88, 120) include means (56, 57) for alternately applying a forward and a reverse bias across said device (55, 60).
Claim 11
Independent Claim
32 words
A system according to any one of claims 6 to 8, further characterized by means (50) for depositing the layer (64, 84, 152) of transparent conductive material prior to applying said bias.
Claim 12
Independent Claim
33 words
A system according to any one of claims 6 to 9, further characterized by detecting means (74, 100, 126) for detecting the location of said short circuit current paths (72, 83, 138, 153).
References Cited (Backward Citations)
No citation records indexed.
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