EP0132822A2
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EP
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Composite circuit of bipolar transistors and field effect transistors
Assignee: Hitachi Ltd
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Filing: 1984-07-23
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Granted: —
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Expires: 2004-07-23
Abstract
Abstract A novel composite circuit comprises a first bipolar transistor (31) with a collector (C) of one conduction type connected to a first potential (V,), an emitter of one conduction type (E) connected to an output, a second bipolartransistor (32) with a collector of one conduction type (C) connected to the output and an emitter of one conduction type (E) connected to a second potential (V 2 ), a field effect transistor of the opposite conduction type (11) with a gate (G) connected to an input, a source connected to a third potential (V 3 ) and a drain (D) connected to the base (B) of the opposite conduction type of the first bipolar transistor, a field effect transistor of one conduction type (21) with a gate (G) connected to the input, a drain (D) connected to the base (B) of the first bipolartransistor, and a source (S) connected to the base (B) of the opposite conduction type of the second bipolar transistor, and a unidirectional element (5) inserted between the output and the drain (D) of the field effect transistor of one conduction type and having the direction of rectification opposite to that of the PN junction formed between the base and emitter of the first bipolar transistor.
Inventors
- 👤 Ikuro Masuda
- 👤 Masahiro Iwamura
- 👤 Motohisa Nishihara
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-25 01:58
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/02; H03K19/08; H03K19/094; H03K19/0944; H03K19/09448; H03K19/01; H03K19/017
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
206 words
A composite circuit comprising a first bipolar transistor (31) including a collector (C) of one conduction type connected to a first potential (V 1 ) and an emitter (E) of one conduction type connected to an output, a second bipolar transistor (32) including a collector (C) of one conduction type connected to said output and an emitter (E) connected to a second potential (V 2 ), a field effect transistor of the opposite conduction type (11) including a gate (G) connected to an input, a source (S) connected to a third potential (V 3 ) and a drain (D) connected to the base (B) of the opposite conduction type of said first bipolar transistor, a field effect transistor of the opposite conduction type (21) including a gate (G) connected to said input, a drain (D) connected to the base of said first bipolar transistor, and a source (S) connected to the base of said second bipolar transistor of the opposite conduction type, a unidirectional element (5) inserted between said output and the drain of said field effect transistor of one conduction type and having the direction of rectification opposite to that of the PN junction formed by the base and emitter of said first bipolar transistor.
Claim 2
Dependent Claim
206 words
A composite circuit comprising a first bipolar transistor (31) including a collector (C) of one conduction type connected to a first potential (V 1 ) and an emitter (E) of one conduction type connected to an output, a second bipolar transistor (32) including a collector (C) of one conduction type connected to said output and an emitter (E) connected to a second potential (V 2 ), a field effect transistor of the opposite conduction type (11) including a gate (G) connected to an input, a source (S) connected to a third potential (V 3 ) and a drain (D) connected to the base (B) of the opposite conduction type of said first bipolar transistor, a field effect transistor of the opposite conduction type (21) including a gate (G) connected to said input, a drain (D) connected to the base of said first bipolar transistor, and a source (S) connected to the base of said second bipolar transistor of the opposite conduction type, a unidirectional element (5) inserted between said output and the drain of said field effect transistor of one conduction type and having the direction of rectification opposite to that of the PN junction formed by the base and emitter of said first bipolar transistor.
Claim 3
Dependent Claim
171 words
A composite circuit comprising a first bipolar transistor (31) including a collector of one conduction type (C) connected to a first potential (V1), and an emitter of one conduction type (E) connected to an output, a second bipolar transistor (32) including a collector of one conduction type (C) connected to said output, and an emitter of one conduction type (E) connected to a second potential (V 2 ), k inputs (k ≧ 2), k field effect transistors of the opposite conduction type (11, 12) including gates (G) connected to said inputs respectively, and sources (S) and drains (D) connected in parallel between a third potential (V 3 ) and the base of the opposite conduction type of said first bipolar transistor respectively, and k field effect transistors of one conduction type (21, 22) including gates (G) connected to said inputs respectively, and drains (D) and sources (S) connected in series to the base of said first bipolar transistor and the base of the opposite conduction type of said second bipolar transistor.
Claim 4
Dependent Claim
171 words
A composite circuit comprising a first bipolar transistor (31) including a collector of one conduction type (C) connected to a first potential (V1), and an emitter of one conduction type (E) connected to an output, a second bipolar transistor (32) including a collector of one conduction type (C) connected to said output, and an emitter of one conduction type (E) connected to a second potential (V 2 ), k inputs (k ≧ 2), k field effect transistors of the opposite conduction type (11, 12) including gates (G) connected to said inputs respectively, and sources (S) and drains (D) connected in parallel between a third potential (V 3 ) and the base of the opposite conduction type of said first bipolar transistor respectively, and k field effect transistors of one conduction type (21, 22) including gates (G) connected to said inputs respectively, and drains (D) and sources (S) connected in series to the base of said first bipolar transistor and the base of the opposite conduction type of said second bipolar transistor.
Claim 5
Dependent Claim
177 words
A composite circuit comprising a first bipolar transistor (31) including a collector (C) of one conduction type connected to a first potential (V 1 ) and an emitter of one conduction type (E) connected to an output, a second bipolar transistor (32) including a collector of one conduction type (C) connected to said output and an emitter of one conduction type (E) connected to a second potential (V 2 ), k inputs (k > 2), k field effect transistors of the opposite conduction type (11, 12) including gates (G) connected to said inputs respectively, and sources (S) and drains (D) connected in series to a third potential (V 3 ) and the base of the opposite conduction type (B) of said first bipolar transistor respectively, and k field effect transistors of one conduction type (21, 22) including gates (G) connected to said inputs respectively, and drains (D) and sources (S) connected in parallel to the base (B) of said first bipolar transistor and the base (B) of the opposite conduction type of said second bipolar transistor respectively.
Claim 6
Dependent Claim
177 words
A composite circuit comprising a first bipolar transistor (31) including a collector (C) of one conduction type connected to a first potential (V 1 ) and an emitter of one conduction type (E) connected to an output, a second bipolar transistor (32) including a collector of one conduction type (C) connected to said output and an emitter of one conduction type (E) connected to a second potential (V 2 ), k inputs (k > 2), k field effect transistors of the opposite conduction type (11, 12) including gates (G) connected to said inputs respectively, and sources (S) and drains (D) connected in series to a third potential (V 3 ) and the base of the opposite conduction type (B) of said first bipolar transistor respectively, and k field effect transistors of one conduction type (21, 22) including gates (G) connected to said inputs respectively, and drains (D) and sources (S) connected in parallel to the base (B) of said first bipolar transistor and the base (B) of the opposite conduction type of said second bipolar transistor respectively.
Claim 7
Dependent Claim
50 words
A composite circuit according to Claim 2 or 3, wherein a unidirectional element (5) having the direction of rectification opposite to that of the PN junction formed by the base and emitter of said first bipolar transistor is inserted between said output and the base of said first bipolar transistor.
Claim 8
Dependent Claim
16 words
A composite circuit according to Claim 1 or 4, wherein said unidirectional element is a diode.
Claim 9
Dependent Claim
27 words
A composite circuit according to Claim 1 or 4, wherein said unidirectional element is a field effect transistor with the gate thereof connected to the drain thereof.
Claim 10
Dependent Claim
46 words
A composite circuit according to Claim 1, 2 or 3, further comprising a circuit element inserted between the base of said second bipolar transistor and a fourth potential (V 4 ) for discharging of the charges stored in the base region of said second bipolar transistor.
Claim 11
Dependent Claim
15 words
A composite circuit according to Claim 7, wherein said circuit element is a resistor (4).
Claim 12
Dependent Claim
50 words
A composite circuit according to Claim 7, said circuit element is the second field effect transistor of one conduction type with the drain thereof connected to the base of said second bipolar transistor, the source thereof connected to the fourth potential, and the gate thereof connected to the first potential.
Claim 13
Dependent Claim
50 words
A composite circuit according to Claim 7, wherein said circuit element is the second field effect transistor of the opposite conduction type with the source thereof connected to the base of said second bipolar transistor, the drain thereof connected to the fourth potential, and the gate connected to said input.
Claim 14
Dependent Claim
55 words
A composite circuit according to Claim 7, wherein said circuit element is the second field effect transistor of one conduction type with the drain thereof connected to the base of said second bipolar transistor, the source thereof connected to said fourth potential, and the gate thereof connected to the base of said first bipolar transistor.
Claim 15
Dependent Claim
23 words
A composite circuit according to Claim 1, 2 or 3, wherein said first potential and said third potential are equal to each other.
Claim 16
Dependent Claim
23 words
A composite circuit according to Claim 1, 2 or 3, wherein said second potential and said fourth potential are equal to each other.
Claim 17
Dependent Claim
20 words
A composite circuit according to Claim 1, 2 or 3, wherein said first potential is higher than said third potential.
References Cited (Backward Citations)
No citation records indexed.
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