Patent US4030785A successfully refreshed from Google Patents.
EP0132408A2
Expired / Lapsed
EP
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Method and apparatus for growing layers or producing coatings on a substrate
Assignee: Individual
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Filing: 1984-07-25
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Granted: —
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Expires: 2004-07-25
Abstract
Abstract The invention relates to a method and apparatus for growing layers or producing coatings on a substrate particularly as utilized in integrated circuits using organometallic vapour phase epitaxy wherein the constituent materials are passed over the substrate under very low pressure conditions and in very low volumes. The apparatus is particularly adapted to carry out the process and includes an ante-chamber to minimize contamination of the growth chamber.
Inventors
- 👤 Jim Auclair
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 02:08
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45561; C23C16/22; C23C16/30; C23C16/301; C23C16/305; C23C16/306; C30; C30B; C30B25/00; C30B25/02; C30B25/14
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
75 words
1 A method of growing a coating of a III-V or II-VI compound on a substrate, which method comprises the steps of placing a substrate inside a chamber, heating the substrate, inducing a vacuum in said chamber of between about 0.1 Torr to about 10 Torr, and flowing a gas containing desired constituent materials forming the layer to be grown at a rate of between 10 cc per minute to about 250 cc per minute.
Claim 2
Dependent Claim
75 words
1 A method of growing a coating of a III-V or II-VI compound on a substrate, which method comprises the steps of placing a substrate inside a chamber, heating the substrate, inducing a vacuum in said chamber of between about 0.1 Torr to about 10 Torr, and flowing a gas containing desired constituent materials forming the layer to be grown at a rate of between 10 cc per minute to about 250 cc per minute.
Claim 3
Dependent Claim
30 words
2 The method of claim 1 wherein said constituent materials are flowed to said chamber at a rate of between 20 cc per minute to about 150 cc per minute.
Claim 4
Dependent Claim
28 words
3 The method of claim 2 wherein the step of heating said substrate comprises the step of heating the substrate to a temperature of between 500°C and 750°C.
Claim 5
Dependent Claim
74 words
4 A method of growing a layer of gallium arsenide on a substrate comprising the steps of placing the substrate inside a chamber, heating the substrate, inducing a vacuum in said chamber of between about 0.1 Torr to about 10 Torr, flowing a carrier gas through trimethylgallium, passing said carrier gas with arsine in hydrogen into said growth chamber at a rate of between 10 cc per minute to about 50 cc per minute.
Claim 6
Dependent Claim
74 words
4 A method of growing a layer of gallium arsenide on a substrate comprising the steps of placing the substrate inside a chamber, heating the substrate, inducing a vacuum in said chamber of between about 0.1 Torr to about 10 Torr, flowing a carrier gas through trimethylgallium, passing said carrier gas with arsine in hydrogen into said growth chamber at a rate of between 10 cc per minute to about 50 cc per minute.
Claim 7
Dependent Claim
17 words
5 The method of claim 4 wherein said substrate is heated to a temperature of about 600°C.
Claim 8
Dependent Claim
22 words
6 The method of claim 4 wherein the molecular ratio of arsine to gallium in said chamber is between 1:1 to 1:10.
Claim 9
Dependent Claim
24 words
7 The method of claim 4 including the step of introducing into the growth chamber during the growth of a layer a doping gas.
Claim 10
Dependent Claim
24 words
8 The method of claim 7 wherein doping gases are introduced into said growth chamber alternately to give alternating P and N type layers.
Claim 11
Dependent Claim
15 words
9 The method of claim 8 wherein said doping gases are hydrogen selenide and dimethylzinc.
Claim 12
Dependent Claim
78 words
10 An apparatus suitable for growing an organometallic coating on a substrate comprising a growth chamber, means for creating a low pressure in said growth chamber, means for supporting the substrate in a desired position within said chamber, means for heating the substrate while in said desired position, organometallic supply means, gas supply lines from a gas supply to said organometallics and through control valves interposed on said gas supply lines between said organometallics and said growth chamber.
Claim 13
Dependent Claim
78 words
10 An apparatus suitable for growing an organometallic coating on a substrate comprising a growth chamber, means for creating a low pressure in said growth chamber, means for supporting the substrate in a desired position within said chamber, means for heating the substrate while in said desired position, organometallic supply means, gas supply lines from a gas supply to said organometallics and through control valves interposed on said gas supply lines between said organometallics and said growth chamber.
Claim 14
Dependent Claim
10 words
11 The apparatus of claim 10 further including'pressure sensing means.
Claim 15
Dependent Claim
11 words
12 The apparatus of claim 11 further including temperature sensing means.
Claim 16
Dependent Claim
31 words
13 The apparatus of claim 10 further including computer control means co-operatively associated with pressure measurement means and temperature measurement means to automatically control said temperature, pressure and said control valves.
Claim 17
Dependent Claim
75 words
14 An apparatus for growing a III-V or II-VI compound on a substrate, comprising a growth chamber, substrate support means within said growth chamber, means for heating said substrate while on said substrate support means, an ante-chamber associated with said growth chamber, means for creating a reduced pressure in both said ante-chamber and said growth chamber, valve means and means for transferring the substrate from said ante-chamber to said growth chamber while under reduced pressure.
Claim 18
Dependent Claim
75 words
14 An apparatus for growing a III-V or II-VI compound on a substrate, comprising a growth chamber, substrate support means within said growth chamber, means for heating said substrate while on said substrate support means, an ante-chamber associated with said growth chamber, means for creating a reduced pressure in both said ante-chamber and said growth chamber, valve means and means for transferring the substrate from said ante-chamber to said growth chamber while under reduced pressure.
References Cited (Backward Citations)
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