Heterojunction avalanche photodiode

Abstract

Abstract The photodiode comprises a p+ first layer (19) forming a p-n junction with an n second layer (16). An n third layer (13) disposed on an n+ substrate (11) and epitaxial layer (12) is separated from the second layer by a multiple heterojunction structure formed by fourth n layers (14) alternating with fifth n layers (15). Electrons or holes, whichever have the greater ionization rate are minority carriers in the second layer (16) and majority carriers in the third layer (13) which has a smaller bandgap than the second layer. The fourth layers (14) have a bandgap not smaller than the second layer while the fifth layers (15) have a bandgap not smallerthan the third layer but not larger than the second layer. The structure combines low nosie with high speed.

Inventors

• 👤 Kenko Taguchi

Bibliographic Details