Semiconductor device manufacturing method

Claim 3

The manufacturing method according to claim 1, wherein the laser beam has a spot diameter of 3 to 60 µm.

Claim 4

The manufacturing method according to claim 1, wherein the laser beam is a pulse laser beam having a width of 50 nano-second or less.

Claim 5

The manufacturing method according to claim 1, 2 or 3, wherein the non-single-crystal semiconductor layer consists principally of a sublimable semiconductor such as Si, Si x Ge 1-x (where 0 < x < 0.5), Si x C 1-x (where 0 < x < 1), Si 3 N 4-x (where 0 < X < 2) or Si0 2-x (where 0 < x < 1), includes hydrogen or a halogen as a dangling bond neutralizer and has a thickness of 1 µm or less, and wherein the laser beam is a YAG laser beam having a wavelength of about 530 nm, an excimer laser beam having a wavelength of about 1 93 nm (ArF), about 248 nm (KrF), about 308 nm (XeCℓ) or about 315 nm (XeF), an argon laser beam having a wavelength of about 514.5 nm, about 488 nm, about 458 nm, about 363 nm or about 351 nm, or a nitrogen laser beam having a wavelength of 337 nm.

Claim 6

The manufacturing method according to claim 4, wherein the non-single-crystal semiconductor layer is formed on a substrate having a surface of an organic or inorganic insulator.

Claim 7

The manufacturing method according to claim 4, wherein the non-single-crystal semiconductor layer is formed on a transparent conductive layer formed on a transpatent substrate having a surface of an organic or inorganic insulator, wherein the transparent conductive layer consists principally of a sublimable metallic oxide such as Sn0 2 , In 2 0 3 or ITO (Indium-Tin Oxide), or a sublimable metallic nonoxide such as an Si-Cr or Si-Ni alloy.

Claim 8

The manufacturing method according to claim 6, wherein the laser beam has a wavelength of 400 nm or more.

Claim 9

The manufacturing method according to claim 4, wherein the non-single-crystal semiconductor layer is formed on a transparent conductive layer of the laminate member composed of the transparent conductive layer and a nontransparent conductive layer formed on a substrate having a surface of an organic or inorganic insulator, wherein the transparent conductive layer of the laminate member consists principally of a sublimable metallic oxide such as Sn0 2 , In 2 0 3 or ITO, or a sublimable metallic oxide such as a Si-Cr or Si-Ni alloy and the nontransparent conductive layer consists principally of a nonsublimable metal such as At, Cu or Ag.

Claim 10

The manufacturing method according to claim 8, wherein the laser beam has a wavelength of 400 nm or less.

Claim 13

The manufacturing method according to claim 10, wherein the laser beam has a spot diameter of 3 to 60 µm.

Claim 14

The manufacturing method according to claim 10, wherein the laser beam is a pulse laser beam having a width of 50 nano-second or less.

Claim 15

The manufacturing method according to claim 10, 11 or 12, wherein the transparent conductive layer consists principally of a sublimable metallic oxide such as Sn0 2 , In 2 0 3 or ITO (Indium-Tin oxide), or a sublimabel metallic nonoxide such as a Si-Cr or Si-Ni alloy, and has a thickness of 1 µm or less and wherein the laser beam is a YAG laser beam having a wavelength of about 530 nm, an excimer laser beam having a wavelength of about 193 nm (ArF), about 248 nm (KrF), about 308 nm (XeCℓ) or about 315 nm (XeF), an argon laser beam having a wavelength of about 514.5 nmm about 488 nm about 458 nm, about 363 nm or about 351 nm, or a nitrogen laser beam having a wavelength of 337 nm.

Claim 16

The manufacturing method according to claim 13, wherein the transparent conductive layer is formed on a transparent substrate having a surface of an organic or inorganic insulator.

Claim 17

The manufacturing method according to claim 13, wherein the transparent conductive layer is formed on a non-single-crystal semiconductor layer consists principally of a sublimable semiconductor such as Si, Si x Ge 1-x (where 0 < x < 0.5 ), Si x C 1-x (where 0 < x < 1), Si 3 N 4-x (where 0 < X < 2) or Si0 2-x (where 0 < x < 1 ), includes hydrogen or a halogen as a dangling bond neutralizer.

Claim 20

The manufacturing method according to claim 16, wherein the laser beam has a spot diameter of 3 to 60 um.

Claim 21

The manufacturing method according to claim 16, wherein the laser beam is a pulse laser beam having a width of 50 nano-second or less.

Claim 22

The manufacturing method according to claim 16, 17 or 18, wherein the nontransparent conductive layer consists principally of a sublimable metal such as Cr, or a Cr-Cu, Cr-Ag or Cr-N alloy, and has a thickness of 1 µm or less, and wherein the laser beam is a YAG laser beam having a wavelength of about 530 nm, an excimer laser beam having a wavelength of about 193 nm (ArF), about 248 nm (KrF), about 308 nm (XeCt) or about 315 nm (XeF), an argon laser beam having a wavelength of about 514.5 nm, about 488 nm, about 458 nm, about 363 nm or about 351 nm, or a nitrogen laser beam having a wavelength of 337 nm.

Claim 23

The manufacturing method according to claim 19, wherein the nontransparent conductive layer is formed on a substrate having a surface of an organic or inorganic insulator.

Claim 24

The manufacturing method according to claim 19, wherein the nontransparent conductive layer is formed on a non-single-crystal semiconductor layer consists principally of a sublimable semiconductor such as Si, Si x Ge 1-x (where 0 < x < 0.5), Si x C 1-x (where 0 < x < 1), Si 3 N 4-x (where 0 < X < 2) or Si0 2-x (where 0 < x < 1), includes hydrogen or a halogen as a dangling bond neutralizer.

Claim 25

The manufacturing method according to claim 16, 17 or 18, wherein the nontransparent conductive layer consists principally of non-sublimable metal such as Ap, Cu or Ag and has a thickness of 1 µm or less, and wherein the laser beam is a YAG laser beam having a wavelength of about 530 nm, an excimer laser beam having a wavelength of about 193 nm (ArF), about 248 nm (KrF), about 308 nm (XeCℓ) or about 315 nm (XeF), an argon laser beam having a wavelength of about 488 or 51 2 nm, or a nitrogen laser beam having a wavelength of 337 nm.

Claim 26

The manufacturing method according to claim 22, wherein the nontransparent conductive layer is formed on a substrate having a surface of an organic or inorganic insulator.

Claim 29

The manufacturing method according to claim 24, wherein the laser beam has a spot diameter of 3 to 60 µm.

Claim 30

The manufacturing method according to claim 24, wherein the laser beam is a pulse laser beam having a width of 50 nano-second or less.

Claim 31

The manufacturing method according to claim 24, 25 or 26, wehrein the laminate member has a thickness of 1 µm or less, wherein the transparent conductive layer of the laminate member consists principally of a sublimable metallic oxide such as Sn0 2 , In 2 0 3 or ITO (Indium-Tin oxide), or a sublimable metallic nonoxide such as a Si-Cr, or Si-Ni alloy, and wherein the nontransparent conductive layer of the laminate member consists principally of a sublimable metal such as Cr, or a Cr-Cu, Cr-Ag, or Cr-N alloy, or a nonsublimable metal such as At, Cu or Ag, and wherein the laser beam is a YAG laser beam having a wavelength of about 530 nm, an excimer laser beam having a wavelength of about 193 nm (ArF), about 248 nm (KrF), about 308 nm (XeCℓ) or about 315 nm (XeF), an argon laser beam having a wavelength of about 514.5 nm, about 488 nm, about 458 nmm, about 363 nm or 351 nm, or a nitrogen laser beam having a wavelength of 337 nm.

Claim 32

The manufacturing method according to claim 27, wherein the laminate member is formed on a substrate having a surface of an organic or inorganic insulator, and wherein the nontransparent conductive layer is on the side of the substrate.

Claim 33

The manufacturing method according to claim 27, wherein the laminate member is formed on non-single-crystal semiconductor layer consists principally of a sublimable semiconductor such as Si, Si x Ge 1-x (where 0 < x < 0.5), Si x C 1-x (where 0 < x < 1), Si 3 N 4-x (where 0 < X < 2) or SiO 2-x (where 0 < x < 1 ), includes hydrogen or a halogen as a dangling bond neutralizer, and wherein the transparent conductive layer is on the side of the non-single-crystal semiconductor layer.

Claim 34

A semiconductor device manufacturing method comprising the steps of: forming a first conductive layer on a substrate; patterning the first conductive layer by a first lasers beam to form at least two second conductive layer isolated by a first groove; forming on the substrate a first non-single-crystal semiconductor layer which covers the second conductive layers and extends into the first groove; patterning the first non-single-crystal semiconductor layer by a second laser beam to form at least two second non-single-crystal semiconductor layers isolated by a second groove; forming on the substrate a third conductive layer which covers the second non-single-crystal semiconductor layers and extends into the second groove; and patterning the third conductive layer by a third laser beam to form at least two fourth conductive layers isolated by a third groove; wherein the first, second and third laser beams have a short wavelength of 600 nm or less.

Claim 35

A semiconductor device manufacturing method comprising the steps of: forming a first conductive layer on a substrate; patterning the first conductive layer by a first lasers beam to form at least two second conductive layer isolated by a first groove; forming on the substrate a first non-single-crystal semiconductor layer which covers the second conductive layers and extends into the first groove; patterning the first non-single-crystal semiconductor layer by a second laser beam to form at least two second non-single-crystal semiconductor layers isolated by a second groove; forming on the substrate a third conductive layer which covers the second non-single-crystal semiconductor layers and extends into the second groove; and patterning the third conductive layer by a third laser beam to form at least two fourth conductive layers isolated by a third groove; wherein the first, second and third laser beams have a short wavelength of 600 nm or less.

Claim 36

The manufacturing method according to claim 30, wherein the laser beams have a spot diameter of 3 to 60 um.

Claim 37

The manufacturing method according to claim 30, wherein the laser beams are pulse laser beams having a width of 50 nano-second or less.

Claim 38

The manufacturing method according to claim 30, 31 or 32, wherein the first and second conductive layers and the first non-single-crystal layer are each 1 µm or less thick.

Claim 39

The manufacturing method according to claim 33, wherein the substrate is a transparent substrate having a surface of an organic or inorganic insulator, wherein the first conductive layer is a transparent conductive layer consisting principally of a sublimable metallic oxide such as Sn0 2 , In 2 0 3 or ITO (Indium-Tin oxide), or sublimable metallic nonoxide such as a Si-Cr or Si-Ni alloy, wherein the first non-single-crystal semiconductor layer consists principally of a sublimable semiconductor such as Si, Si x Ge 1-x (where 0 < x < 0.5), Si x C 1-x (where 0 < x < 1), Si 3 N 4- x (where 0 < x < 2) or SiO 2-x (where 0 < x < 1), and wherein the third conductive layer is a nontransparent conductive layer formed of a sublimable metal such as Cr, a Cr-Cu, Cr-Ag or Cr-N alloy.

Claim 40

The manufacturing method according to claim 33, wherein the substrate is a transparent substrate having a surface of an organic or inorganic insulator, wherein the first conductive layer is a transparent conductive layer consisting principally of a sublimable metallic oxide such as Sn0 2 , In 2 0 3 or ITO (Indium-Tin oxide), or sublimable metallic nonoxide such as a Si-Cr or Si-Ni alloy, wherein the first non-single-crystal semiconductor layer consists principally of a sublimable semiconductor such as Si, Si x Ge 1-x (where 0 < x < 0.5), Si x C 1-x where 0 < x < 1 ), Si 3 N 4-x (where 0 < x < 2 ) or Si0 2-x (where 0 < x < 1), wherein the third conductive layers is a laminate member composed of a second transparent conductive layer formed on the side of the non-single-crystal semiconductor layer and a nontransparent conductive layer formed on the second transparent conductive layer, the second transparent conductive layer consisting principally of the sublimable metallic oxide or sublimable metallic nonoxide, and the nontransparent conductive layer consisting principally of the sublimable metal such as Cr, a Cr-Cu, Cr-Ag or Cr-N alloy, or nonsublimable metal such as Aℓ, Cu or Ag.

Claim 41

The manufacturing method according to claim 33, wherein the substrate has a surface of an organic or inorganic insulator, wherein the first conductive layer consists principally of a sublimable metallic oxide such as Sn0 2 , In 2 0 3 or ITO (Indium-Tin oxide), a sublimable matallic oxide such as a Si-Cr or Si-Ni alloy, a sublimable metal such as Cr, a Cr-Cu, Cr-Ag or Cr - N alloy, or a nonsublimable metal such as Aℓ, Cu or Ag, wherein the first non-single-crystal semiconductor layer consists principally of a sublimable semiconductor such as Si, Si x Ge 1-x (where 0 < x < 0 . 5 ) , Si x C 1-x (where 0 < x < 1 ), Si 3 N 4-x (where 0 < x < 2) or Si0 2-x (where 0 < x < 1), and wherein the third conductive layer is a transparent conductive layer formed of the sublimable metallic oxide or sublimable metallic nonoxide.

Claim 42

The manufacturing method according to claim 33, wherein the substrate has a surface of an organic or inorganic insulator, wherein the first conductive layer is a laminate member composed of a nontransparent conductive layer formed on the side of the substrate and a first transparent conductive layer formed on the nontransparent conductive layer, the nontransparent conductive layer consisting principally of a sublimable metal such as Cr, a Cr-Cu, Cr-Ag or Cr-N alloy, or a nonsublimable matal such as Aℓ, Cu or Ag, and the first transparent conductive layer is formed of a sublimable metallic oxide such as Sn02, In 2 0 3 or ITO (Indium-Tin oxide) or a sublimable metallic oxide such as a Si-Cr or Si-Ni alloy, wherein the first non-single-crystal semiconductor layer consists principally of a sublimable semiconductor such as Si, Si x Ge 1-x (where 0 < x < 0.5), Si x C 1-x (where 0 < x < 1), Si 3 N 4-x (where 0 < x < 2) or SiO 2-x (where 0 < x < 1), and wherein the third conductive layers is a second transparent conductive layer formed of the sublimable metallic oxide or sublimable metallic nonoxide.