EP0130591A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device of resin-seal type
Assignee: Toshiba Corp
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Filing: 1984-06-29
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Granted: —
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Expires: 2004-06-29
Abstract
Abstract Slits (8) are formed in the metal wiring layer (4) formed on a semiconductor device to be resin sealed. Thereby, the total width of the metal wiring layer is divided into widths each of the order of 30 to 40 mu m, whereby stress generated in the metal wiring layer (4) is absorbed and prevented from causing cracking, deformation, and other defects.
Inventors
- 👤 Toshiharu Sakurai
- 👤 Seiichi Hirata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 13:58
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/427; H10W20/43; H10W74/00; H10W74/10; H10W74/131; H10W74/137
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
36 words
A resin-seal type semiconductor device having a wiring part (4) of a semiconductor surface sealed with a resin, characterized by at least one slit (8) formed in the wiring part (4) for absorbing stress imparted thereto.
Claim 2
Dependent Claim
36 words
A resin-seal type semiconductor device having a wiring part (4) of a semiconductor surface sealed with a resin, characterized by at least one slit (8) formed in the wiring part (4) for absorbing stress imparted thereto.
Claim 3
Dependent Claim
31 words
A resin-seal type semiconductor device according to claim 1 in which a plurality of slits (8) are formed in the wiring part (4) in a mutually parallel and spaced- apart state.
Claim 4
Dependent Claim
35 words
A resin-seal type semiconductor device according to claim 1 or 2 in which the or each slit (8) is formed by providing a separated slit in the wiring part (4) in the longitudinal direction thereof.
Claim 5
Dependent Claim
25 words
A resin-seal type semiconductor device according to any one of claims 1 to 3 in which the wiring part (4) is an aluminum wiring layer.
Claim 6
Dependent Claim
25 words
A resin-seal type semiconductor device according to any one of claims 1 to 4 wherein the wiring layer is divided into strips by said slits.
Claim 7
Dependent Claim
25 words
A resin-seal type semiconductor device according to claim 5 wherein said strips have a width in the range of from 30 microns to 40 microns.
Claim 8
Dependent Claim
18 words
A large area semiconductor pellet comprising a semiconductor device according to any one of claims 1 to 6.
References Cited (Backward Citations)
No citation records indexed.
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