EP0130571A2
Expired / Lapsed
EP
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A semiconductor device comprising an alpha-rays shielding layer
Assignee: Hitachi Ltd
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Filing: 1984-06-28
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Granted: —
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Expires: 2004-06-28
Abstract
Abstract A semiconductor device containing an a-rays shielding resin layer (7) on at least active portion (12) of a semiconductor element (5), said a-rays shielding resin being a special polyimide resin, is excellent in thermal resistance at the time of sealing the semiconductor element (5), adhesion of the a-rays shielding layer (7) to the semiconductor element (5), and a-rays shielding ability.
Inventors
- 👤 Fusaji Shoji
- 👤 Akihiro Kenmotsu
- 👤 Isao Obara
- 👤 Hitoshi Yokono
- 👤 Takeshi Komaru
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 20:28
CPC Classifications
H; H10; H10W; H10W76/00; H10W76/10; H10W76/17; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10W42/00; H10W42/20; H10W42/25; H10W74/40; H10W74/47; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/682; H10W72/00; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/551; H10W72/552; H10W72/5522; H10W72/851; H10W72/874; H10W72/884; H10W90/00; H10W90/701; H10W90/751; H10W90/754; H10W90/756
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
83 words
I. In a semiconductor device comprising a semiconductor element (5) at least active portion (12) of which is coated with an α-rays shielding resin layer (7), and a package (9) encapsulating said semiconductor element (5), the improvement wherein the resin for α-rays shielding resin layer (7) is at least one member selected from the group consisting of a polyimide resin having the repeating unit of the formula: and a polyimide resin having the repeating unit of the formulae: and wherein R is or
Claim 2
Dependent Claim
15 words
A semiconductor device according to Claim 1, wherein the package (9) is a ceramic package.
Claim 3
Dependent Claim
22 words
A semiconductor device according to Claim 2, wherein the thickness of the a-rays shielding resin layer (7) is 28 to 70 µm.
Claim 4
Dependent Claim
52 words
A semiconductor device according to Claim 2, wherein the polyimide resin having the repeating unit of the formula (1) is obtained from 4,4'-diaminodiphenyl ether and 3,3',4,4'-biphenyltetracarboxylic acid dianhydride, or 4,4'-diaminodiphenyl ether and p-phenylenediamine (the former 100 to 25% by mole and the latter 0 to 75% by mole) and 3,3',4,4'-biphenyltetracarboxylic acid dianhydride.
Claim 5
Dependent Claim
61 words
A semiconductor device according to Claim 2, wherein the polyimide resin having the repeating unit of the formulae (1) and (2) is obtained from (a) 4,4'-diaminodiphenyl ether, 3,3',4,4'-biphenyltetracarboxylic acid dianhydride and pyromellitic acid dianhydride, or (b) 4,4'-diaminodiphenyl ether, p-phenylenediamine (the former 100 to 25% by mole and the latter 0 to 75% by mole), 3,3',4,4'-biphenyltetracarboxylic acid dianhydride and pyromellitic acid dianhydride.
Claim 6
Dependent Claim
15 words
A semiconductor device according to Claim 1, wherein the package (9) is a resin package.
Claim 7
Dependent Claim
21 words
A semiconductor device according to Claim 6, wherein the thickness of the a-rays shielding resin layer(7) is 28 to 70 um.
Claim 8
Dependent Claim
52 words
A semiconductor device according to Claim 6, wherein the polyimide resin having the repeating unit of the formula (1) is obtained from 4,4'-diaminodiphenyl ether and 3,3',4,4'-biphenyltetracarboxylic acid dianhydride, or 4,4'-diaminodiphenyl ether and p-phenylenediamine (the former 100 to 25% by mole and the latter 0 to 75% by mole) and 3,3',4,4'-biphenyltetracarboxylic acid dianhydride.
Claim 9
Dependent Claim
61 words
A semiconductor device according to Claim 6, wherein the polyimide resin having the repeating unit of the formulae (1) and (2) is obtained from (a) 4,4'-diaminodiphenyl ether, 3,3',4,4'-biphenyltetracarboxylic acid dianhydride and pyromellitic acid dianhydride, or (b) 4,4'-diaminodiphenyl ether, p-phenylenediamine (the former 100 to 25% by mole and the latter 0 to 75% by mole), 3,3',4,4'-biphenyltetracarboxylic acid dianhydride and pyromellitic acid dianhydride.
References Cited (Backward Citations)
No citation records indexed.
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