EP0129997A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Process for the production of PTC thermistors
Assignee: Taiheiyo Cement Corp
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Filing: 1984-06-05
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Granted: —
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Expires: 2004-06-05
Abstract
Abstract A process for the production of glass sealed types PTC thermistors is disclosed wherein a positive temperature coefficient semiconductor ceramic material (1) is sealed in a glass (4) having a softening point of no higher than 560°C in the presence of air, oxygen or an air/oxygen mixture.
Inventors
- 👤 Keiichi Minegishi
- 👤 Tokuji Akiba
- 👤 Tadao Katoh
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 10:50
CPC Classifications
H; H01; H01C; H01C7/00; H01C7/02; H01C17/00; H01C17/02; H01C1/00; H01C1/02; H01C1/024; H01C7/022; H01C7/023; H01C7/025
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
41 words
A process for the production of P T C thermistors characterised by sealing a positive temperature coefficient semiconductor ceramic material (1) in glass (4) in the presence of air, oxygen or an air/oxygen mixture (wherein 0% the volume of air 100%).
Claim 2
Dependent Claim
41 words
A process for the production of P T C thermistors characterised by sealing a positive temperature coefficient semiconductor ceramic material (1) in glass (4) in the presence of air, oxygen or an air/oxygen mixture (wherein 0% the volume of air 100%).
Claim 3
Dependent Claim
32 words
A process for the production of PTC thermistors characterised by sealing a positive temperature coefficient semiconductor ceramic material (1) in a low-melting glass having a softening point of no higher than 560°C.
Claim 4
Dependent Claim
32 words
A process for the production of PTC thermistors characterised by sealing a positive temperature coefficient semiconductor ceramic material (1) in a low-melting glass having a softening point of no higher than 560°C.
Claim 5
Dependent Claim
50 words
A process for the production of PTC thermistors characterised by sealing a positive temperature coefficient semiconductor ceramic material (1) in a low-melting glass (4) having a softening point of no higher than 560°C in the presence of air, oxygen or an air/oxygen mixture (wherein 0% the volume of air 100%).
Claim 6
Dependent Claim
50 words
A process for the production of PTC thermistors characterised by sealing a positive temperature coefficient semiconductor ceramic material (1) in a low-melting glass (4) having a softening point of no higher than 560°C in the presence of air, oxygen or an air/oxygen mixture (wherein 0% the volume of air 100%).
Claim 7
Dependent Claim
25 words
A process according to claim 1, 2 or 3, characterised in that the glass (4) has a softening point of from 450°C to 560°C inclusive.
Claim 8
Dependent Claim
27 words
A process according to any one of the preceding claims, characterised in that the glass (4) is in the form of a tube sealed at both ends.
Claim 9
Dependent Claim
27 words
A process according to claim 5, characterised in that lead wires (3) are inserted into opposite ends of the glass tube (4) prior to the sealing thereof.
Claim 10
Dependent Claim
32 words
A process according to claim 5 or 6, characterised in that electrodes (2) are applied to opposite sides of the semiconductor material (1) prior to its insertion in the glass tube (4).
Claim 11
Dependent Claim
75 words
A process according to any one of the preceding claims, characterised in that the glass used is based on B 2 O 3 -PbO-ZnO, B 2 O 3 -PbO-SiO 2 , B 2 O 3 -PbO-Ti 2 O, B 2 O 3 -PbO-SiO 2 -Al 2 O 3 -ZnO, B 2 0 3 -PbO-V 2 0 51 Sio 2 -PbO-K 2 0, SiO 2 -PbO-Na 2 O or SiO 2 -PbO-K 2 O-Na 2 O.
Claim 12
Dependent Claim
23 words
A process according to any one of the preceding claims, characterised in that the semiconductor material (1) is a barium titanate ceramic material.
Claim 13
Dependent Claim
33 words
A process according to claim 9, characterised in that the barium titanate ceramic material has added thereto any one of trivalent antimony, trivalent bismuth, pentavalent tantalum, pentavalent niobium or a rare earth metal.
References Cited (Backward Citations)
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