EP0129730A2
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EP
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Photo-electro data memory
Assignee: International Business Machines Corp
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Filing: 1984-05-28
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Granted: —
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Expires: 2004-05-28
Abstract
Abstract A photo-electro data memory uses a record member comprising the colour centres in sodium fluoride, and which is exposed to laser light of wavelength 577 and 607nm while being subjected first to an electric field of 50 volts, and then of 100 volts. A different photo-electro-reaction is induced in the material where the light falls, depending on the light frequency and the electric field, and these different reactions can be subsequently read.
Inventors
- 👤 Richard Timothy Harley
- 👤 Roger Morton Macfarlane
- 👤 Robert Mckinnon Shelby
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 22:20
CPC Classifications
G; G11; G11B; G11B7/00; G11B7/004; G11B7/0045; G11B7/00453; G11B13/00; G11C; G11C13/00; G11C13/04; G11C13/041; G11C13/047
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
99 words
A method of storing data in an optical storage system in a material exhibiting inhomogeneous line broadening and capable of storing at least two bits of information in the frequency dimension comprising the steps of applying a fixed voltage at a first level to suitable electrodes to provide a first inhomogeneous electric field about said material, and exposing said material to light at a first pre-selected frequency with a wavelength narrower than and within the homogeneous linewidth whereby a reaction occurs in said material to form a first hole in the frequency dimension which represents a first data bit.
Claim 2
Independent Claim
99 words
A method of storing data in an optical storage system in a material exhibiting inhomogeneous line broadening and capable of storing at least two bits of information in the frequency dimension comprising the steps of applying a fixed voltage at a first level to suitable electrodes to provide a first inhomogeneous electric field about said material, and exposing said material to light at a first pre-selected frequency with a wavelength narrower than and within the homogeneous linewidth whereby a reaction occurs in said material to form a first hole in the frequency dimension which represents a first data bit.
Claim 3
Dependent Claim
65 words
A method as described in claim 1 including the step of exposing said material to light at at least one additional preselected frequency with a wavelength narrower than and within the homogeneous linewidth and different from said first frequency whereby a reaction occurs in said material to form at least one additional hole in the frequency dimension which represents at least one additional data bit.
Claim 4
Independent Claim
162 words
A method of optically storing data in an optical storage system in a material exhibiting inhomogeneous line broadening and capable of storing at least two bits of information in the frequency dimension comprising the steps of applying a fixed voltage at a first level to suitable electrodes to provide a first inhomogeneous electric field about said material, exposing said material to light at at least two different preselected frequencies with a wavelength narrower than and within the first homogeneous linewidth whereby a reaction occurs in said material to form at least two holes in the frequency dimension which represent at least two data bits, applying a fixed voltage at a second level to said electrodes to provide a second inhomogeneous electric field about said material, and exposing said material to light at at least two different preselected frequencies whereby a reaction occurs in said material to form at least two holes in the frequency dimension which represents at least two data bits.
Claim 5
Independent Claim
162 words
A method of optically storing data in an optical storage system in a material exhibiting inhomogeneous line broadening and capable of storing at least two bits of information in the frequency dimension comprising the steps of applying a fixed voltage at a first level to suitable electrodes to provide a first inhomogeneous electric field about said material, exposing said material to light at at least two different preselected frequencies with a wavelength narrower than and within the first homogeneous linewidth whereby a reaction occurs in said material to form at least two holes in the frequency dimension which represent at least two data bits, applying a fixed voltage at a second level to said electrodes to provide a second inhomogeneous electric field about said material, and exposing said material to light at at least two different preselected frequencies whereby a reaction occurs in said material to form at least two holes in the frequency dimension which represents at least two data bits.
Claim 6
Dependent Claim
66 words
Photo-electric data memory system .comprising a record member, exposure means for exposing a selected location of the record member to light of at least one preselected frequency, and electrode means for applying at least one preselected electric field to the record member during said exposure, said record member being made of photo-electro-reactive material differently and inhomogeneously responsive depending on said preselected frequency and said electric field.
Claim 7
Dependent Claim
66 words
Photo-electric data memory system .comprising a record member, exposure means for exposing a selected location of the record member to light of at least one preselected frequency, and electrode means for applying at least one preselected electric field to the record member during said exposure, said record member being made of photo-electro-reactive material differently and inhomogeneously responsive depending on said preselected frequency and said electric field.
Claim 8
Dependent Claim
27 words
A memory system as claimed in claim 4 in which the material has an inhomogeneously broadened optical absorption band which is bleachable and exhibits a Stark effect.
Claim 9
Dependent Claim
20 words
A memory system as claimed in claim 4 or 5 in which the material comprises the colour centres in NaF.
Claim 10
Dependent Claim
21 words
A memory system as claimed in claim 4, 5, or 6 in which said preselected frequency has a wavelength of 577nm.
Claim 11
Dependent Claim
22 words
A memory system as claimed in claim 4, 5, 6 or 7 in which said preselected frequency has a wavelength of 607nm.
References Cited (Backward Citations)
No citation records indexed.
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