EP0129265A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Methods of manufacturing semiconductor devices with reduction in the charge carrier trap density
Assignee: Koninklijke Philips NV
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Filing: 1984-05-14
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Granted: —
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Expires: 2004-05-14
Abstract
Abstract A plasma and heating treatment is performed to reduce the density of charge carrier traps adjacent the interface of an insulating layer (12) e.g. of thermally grown silicon dioxide and a semiconductor body 10. During this plasma and heating treatment the device structure so far formed (12 to 16) is covered with an additional layer (20) e.g. of silane-deposited silicon containing hydrogen, and this additional layer (20) protects the insulating layer (12) from direct bombardment by the plasma. After the plasma and heating treatment the additional layer (12) is removed from at least most areas of the semiconductor device structure (12 to 16). The heating e.g. at about 400°C or less may be effected during and/or after the plasma treatment.
Inventors
- 👤 Stanley David Brotherton
- 👤 Audrey Gill
- 👤 Michael James King
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 10:41
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/94; Y; Y10; Y10S; Y10S148/00; Y10S148/015; Y10S148/024; Y10S148/125; Y10S148/128; Y10S438/00; Y10S438/91
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
111 words
A method of manufacturing a semiconductor device in which a semiconductor device structure is formed adjacent a major surface of a semiconductor body and includes an insulating layer at said major surface, and a plasma and heating treatment is performed to reduce the density of charge carrier traps adjacent the interface of the insulating layer and the semiconductor body, characterized in that during the plasma and heating treatment the semiconductor device structure is covered by an additional layer which protects the insulating layer from direct bombardment by the plasma, and after the plasma and heating treatment the additional layer is removed from at least most areas of the semiconductor device structure.
Claim 2
Independent Claim
111 words
A method of manufacturing a semiconductor device in which a semiconductor device structure is formed adjacent a major surface of a semiconductor body and includes an insulating layer at said major surface, and a plasma and heating treatment is performed to reduce the density of charge carrier traps adjacent the interface of the insulating layer and the semiconductor body, characterized in that during the plasma and heating treatment the semiconductor device structure is covered by an additional layer which protects the insulating layer from direct bombardment by the plasma, and after the plasma and heating treatment the additional layer is removed from at least most areas of the semiconductor device structure.
Claim 3
Dependent Claim
16 words
A method as claimed in Claim 1, further characterized in that the additional layer contains hydrogen.
Claim 4
Dependent Claim
22 words
A method as claimed in Claim 2, further characterized in that the additional layer is of silicon deposited by decomposition of silane.
Claim 5
Dependent Claim
31 words
A method as claimed in Claim 2 or Claim 3, further characterized in that the silicon additional layer has a thickness of more than 0.2 micrometres and less than 0.6 micrometres.
Claim 6
Independent Claim
36 words
A method as claimed in anyone of the preceding Claims, further characterized in that the plasma and heating treatment comprises heating the body to a temperature not exceeding 500°C while maintaining the body in the plasma.
Claim 7
Independent Claim
36 words
A method as claimed in anyone of the preceding Claims, further characterized in that the plasma and heating treatment includes heating the body to a temperature not exceeding 500°C after removing the body from the plasma.
Claim 8
Independent Claim
47 words
A method as claimed in anyone of the preceding Claims, further characterized in that, after the plasma and heating treatment to reduce the density of charge-carrier traps, the temperature of the body is maintained below 500 0 C for remaining steps in the manufacture of the device.
Claim 9
Independent Claim
38 words
A method as claimed in anyone of the preceding Claims, further characterized in that, after the plasma and heating treatment to reduce the density of charge-carrier traps, the additional layer is removed entirely from the semiconductor device structure.
Claim 10
Independent Claim
59 words
A method as claimed in anyone of the preceding Claims, further characterized in that, after the removal of the additional layer there is formed on the insulating layer at least one electrode which serves in the manufactured device to control the passage of charge carriers in the underlying portion of the body by capacitive coupling across the insulating layer.
Claim 11
Independent Claim
77 words
A method as claimed in anyone of the preceding Claims, further characterized in that, before providing the additional layer, there is formed on the insulating layer at least one electrode which serves in the manufactured device to control the passage of charge carriers in the underlying portion of the body by capacitive coupling across the insulating layer, and in that the additional layer is present over said at least one electrode during the plasma and heating treatment.
Claim 12
Independent Claim
21 words
A method as claimed in anyone of the preceding Claims, further characterized in that the insulating layer is of silicon dioxide.
Claim 13
Independent Claim
17 words
A method as claimed in anyone of the preceding Claims, further characterized in-that the plasma comprises hydrogen.
References Cited (Backward Citations)
EP0008928A1
Cited
GB2056174A
Cited
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