EP0127268A2
Expired / Lapsed
EP
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Method of reactive ion etching molybdenum and molybdenum silicide
Assignee: Toshiba Corp
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Filing: 1984-03-06
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Granted: —
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Expires: 2004-03-06
Abstract
Abstract The method of reactive ion etching molybdenum or molybdenum silicide include the steps of placing a sample (4) to be etched on one of two opposed electrodes (2, 3) in a vacuum chamber (1), charging an etching gas into the chamber, applying high frequency electrical power to the electrodes to generate a discharge between them, and etching the exposed portion of the sample. The gas is a mixture of chlorine and oxygen, with the oxygen flow rate being less than about 30% of the total flow rate of the mixture.
Inventors
- 👤 Tohru Patent Division Watanabe
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 08:47
CPC Classifications
C; C23; C23F; C23F4/00; H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
102 words
A method of reactive ion etching the surface of a sample, which surface includes molybdenum and/or molybdenum silicide, the method comprising locating the sample on one of a pair of spaced electrodes in a vacuum chamber with the surface to be etched exposed, introducing into the vacuum chamber an etching mixture which includes oxygen gas, and generating a discharge between the electrodes by applying a high frequency voltage therebetween: characterised in that the etching mixture consists of chlorine gas and oxygen gas and the flow rate of the oxygen gas is less than about 30% of the flow rate of the mixture.
Claim 2
Independent Claim
102 words
A method of reactive ion etching the surface of a sample, which surface includes molybdenum and/or molybdenum silicide, the method comprising locating the sample on one of a pair of spaced electrodes in a vacuum chamber with the surface to be etched exposed, introducing into the vacuum chamber an etching mixture which includes oxygen gas, and generating a discharge between the electrodes by applying a high frequency voltage therebetween: characterised in that the etching mixture consists of chlorine gas and oxygen gas and the flow rate of the oxygen gas is less than about 30% of the flow rate of the mixture.
Claim 3
Dependent Claim
32 words
A method of reactive ion etching according to claim 1, in which the flow rate of the gas is from about 5% to about 20% of the flow rate of the mixture.
Claim 4
Dependent Claim
32 words
A method of reactive ion etching according to claim 1 or claim 2, in which the pressure of the mixture is in the range from about 12 Pa to about 24 Pa.
Claim 5
Independent Claim
43 words
A method of reactive ion etching according to any one of the preceding claims, in which silicon dioxide underlies the surface to be etched and the etching selectivity ratio of the molybdenum silicide or molybdenum over silicon dioxide is at least about 10%.
Claim 6
Independent Claim
39 words
A method of reactive ion etching according to any one of the preceding claims, in which parts of the surface include photoresist and the etching selectivity ratio of molybdenum silicide or molybdenum over photoresist is at least about 3.
References Cited (Backward Citations)
No citation records indexed.
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