Method of manufacturing multi-layer semiconductor device

Abstract

Abstract A method of manufacturing a semiconductor device is disclosed. In the manufacturing method, an impurity diffusion layer (22) as a first interconnection layer is formed on a semiconductor substrate (21). Then, an aluminum layer (24) as a second interconnection layer is formed on the semiconductor substrate (21) through an insulating film (23) interposing therebetween. Another insulating layer (25) is further formed on the aluminum layer (24). An anisotropic etching process is applied to the Insulating layer (23), the second interconnection layer (24), and the insulating film (25), thereby forming a contact hole (27) extending up to the first interconnection layer (22) through these layers (23 and 24), and the insulating film (25). After the formation of the contact hole (27), an aluminum layer (28) is formed on the entire surface of the Insulating film (25) Including the inner surface of the contact hole. The aluminum layer formed on the contact hole electrically interconnects the first and second interconnecting layers (22, 24).

Inventors

• 👤 Shinji C/O Patent Division Taguchi
• 👤 Homare C/O Patent Division Matsumura
• 👤 Kenji C/O Patent Division Maeguchi

Bibliographic Details