EP0125318A1
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Method of forming amorphous silicon film
Assignee: Mitsui Toatsu Chemicals Inc
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Filing: 1983-11-15
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Granted: —
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Expires: 2003-11-15
Abstract
Abstract A method of forming an amorphous silicon film photo- decomposes a higher-order silane which contains two or more Si atoms, by irradiation with light of a wavelength not exceeding 300 nm, to deposit the amorphous silicon onto a substrate.
Inventors
- 👤 Nobuhisa Kitagawa
- 👤 Masataka Hirose
- 👤 Kazuyoshi Isogaya
- 👤 Yoshinori Room 204 Tanimasa Apaato Ashida
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 03:52
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/2923; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S148/00; Y10S148/061; Y10S148/093
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
59 words
A process for forming an amorphous silicon film, which process comprises subjecting a gaseous higher silane represented by the following general formula: wherein n stands for an integer of 2 or greater to photochemical decomposition under radiation of a light having a wavelength of 300 nm or shorter so as to cause amorphous silicon to deposit on a substrate.
Claim 2
Dependent Claim
59 words
A process for forming an amorphous silicon film, which process comprises subjecting a gaseous higher silane represented by the following general formula: wherein n stands for an integer of 2 or greater to photochemical decomposition under radiation of a light having a wavelength of 300 nm or shorter so as to cause amorphous silicon to deposit on a substrate.
Claim 3
Dependent Claim
16 words
The process according to Claim 1, wherein the higher silane contains 2 - 6 silicon atoms.
Claim 4
Dependent Claim
15 words
The process according to Claim 1, wherein the higher silane is disilane, trisilane or tetrasilane.
Claim 5
Dependent Claim
21 words
The process according to Claim 1, wherein the decomposition is carried out at a temperature of from room temperature to 500°C.
Claim 6
Dependent Claim
19 words
The process according to Claim 4, wherein the decomposition is carried out at a temperature of 100° - 300°C.
Claim 7
Dependent Claim
20 words
The process according to Claim 1, wherein the decomposition is carried out at a pressure of atmospheric pressure or higher.
Claim 8
Dependent Claim
16 words
The process according to Claim 6, wherein the pressure is 2 kg/c m 2- G .
Claim 9
Dependent Claim
26 words
The process according to Claim 1, wherein the decomposition is carried out under radiation of an ultraviolet ray having a wavelength of 200 - 300 nm.
Claim 10
Dependent Claim
26 words
The process according to Claim 1, wherein the decomposition is carried out under radiation of a far-ultraviolet ray having a wavelength of 200 nm or shorter.
References Cited (Backward Citations)
No citation records indexed.
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