EP0124960A2
Expired / Lapsed
EP
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Semiconductor devices comprising silicides
Assignee: STC PLC
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Filing: 1984-02-16
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Granted: —
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Expires: 2004-02-16
Abstract
Abstract Polysilicon elements of integrated circuits, for example gates (24) or interconnects, are provided with metallic silicide layers (26) in order to take advantage of the lower resistivity thereof. The polysilicon elements are defined on an oxide layer (23) disposed on a silicon substrate (20) before polysilicon metallisation. After polysilicon metallisation the metal and polysilicon are caused to interdiffuse to form silicide layers (26) covering the polysilicon elements (24).
Inventors
- 👤 Peter Denis Scovell
- 👤 Paul John Rosser
- 👤 Gary John Tomkins
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-26 04:10
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0212; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/0131; H10D64/01322; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
91 words
A method of manufacturing semiconductor devices characterised in that the steps of defining at least one polysilicon element (24) on an oxidised surface (23) of a silicon substrate (20), metallising (25) the at least one defined polysilicon element (24) including sidewalls thereof, and causing interdiffusion of the metal (25) and the polysilicon (24) whereby to form a metallic silicide layer (26) extending over the at least one defined polysilicon element (24) and up to the said oxidised surface (23) on which the at least one defined polysilicon element (24) is disposed.
Claim 2
Independent Claim
91 words
A method of manufacturing semiconductor devices characterised in that the steps of defining at least one polysilicon element (24) on an oxidised surface (23) of a silicon substrate (20), metallising (25) the at least one defined polysilicon element (24) including sidewalls thereof, and causing interdiffusion of the metal (25) and the polysilicon (24) whereby to form a metallic silicide layer (26) extending over the at least one defined polysilicon element (24) and up to the said oxidised surface (23) on which the at least one defined polysilicon element (24) is disposed.
Claim 3
Dependent Claim
24 words
A method as claimed in claim 1, characterised in that the at least one polysilicon element (24) comprises a polysilicon gate and/or an interconnection.
Claim 4
Dependent Claim
51 words
A method as claimed in claim 1 or claim 2, characterised in that those portions of the oxidised surface (23) of the silicon substrate surrounding the at least one polysilicon element (24) are metallised during the metallisation step, and wherein the metal is removed from said portions after the interdiffusion step.
Claim 5
Independent Claim
39 words
A method as claimed in any one of the preceding claims characterised in that the step of defining source and drain regions (21, 22) in the substrate (20) prior to definition of the at least one polysilicon element (24).
Claim 6
Independent Claim
18 words
A method as claimed in any one of the preceding claims characterised in that the metal is titanium.
Claim 7
Dependent Claim
21 words
A method as claimed in claim 5, characterised in that the interdiffusion is achieved by pulse annealing in an inert atmosphere.
References Cited (Backward Citations)
No citation records indexed.
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