EP0124051A2
Expired / Lapsed
EP
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Semiconductor laser
Assignee: Toshiba Corp
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Filing: 1984-04-19
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Granted: —
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Expires: 2004-04-19
Abstract
Abstract A semiconductor laser comprises a semiconductor base structure provided with an etched channel (35), and a plurality of semiconductor layers laminated on the base structure by a liquid-phase epitaxial growth method and performing a laser function. The base structure includes a GaAs substrate (32) of one conductivity type, a layer (33) formed on the substrate (32) for preventing deformation of the channel (35), and an oxidation-preventing layer (34) formed on the channel deformation-preventing layer (33). A current-blocking layer consisting of GaAs of the opposite conductivity type may be formed between the GaAs substrate (32) and the channel deformation-preventing layer (33). Further, another layer for preventing the channel deformation may be provided between the GaAs substrate (32) and the current-blocking layer. In the invented semiconductor laser, the semiconductor layers are epitaxially grown sufficiently on the base structure, and the channel deformation can be sufficiently suppressed.
Inventors
- 👤 Haruki C/O Patent Division Kurihara
- 👤 Minoru C/O Patent Division Sagara
- 👤 Kenji C/O Patent Division Matumoto
- 👤 Hideo C/O Patent Division Tamura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 20:35
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/24; H01S5/22; H01S5/223; H01S5/2232; H01S5/2234; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; Y; Y10; Y10S; Y10S372/00; Y10S372/704
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
73 words
A semiconductor laser comprising: a semiconductor base structure provided with an etched channel and including a GaAs substrate (32), and a plurality of semiconductor layers laminated on the base structure by a liquid-phase epitaxial growth method, said semiconductor layers performing a laser function; characterized in that said base structure further comprising a channel deformation-preventing layer (33) formed on the substrate (32), and an oxidation-preventing layer (34) formed on the channel deformation-preventing layer (33).
Claim 2
Dependent Claim
73 words
A semiconductor laser comprising: a semiconductor base structure provided with an etched channel and including a GaAs substrate (32), and a plurality of semiconductor layers laminated on the base structure by a liquid-phase epitaxial growth method, said semiconductor layers performing a laser function; characterized in that said base structure further comprising a channel deformation-preventing layer (33) formed on the substrate (32), and an oxidation-preventing layer (34) formed on the channel deformation-preventing layer (33).
Claim 3
Dependent Claim
30 words
The semiconductor laser according to claim 1, characterized in that the channel deformation-preventing layer (33) is formed of Ga 1-x Al x As ( 0 .1 ≦ x < 1).
Claim 4
Dependent Claim
18 words
The semiconductor laser according to claim 1, characterized in that the oxidation-preventing (34) layer is formed of GaAs.
Claim 5
Dependent Claim
24 words
The semiconductor laser according to claim 1, characterized in that the channel deformation-preventing layer (34) has a thickness of 500 A to 2000 A.
Claim 6
Dependent Claim
96 words
A semiconductor laser comprising: a semiconductor base structure provided with an etched channel and including a GaAs substrate (13) of one conductivity type, a current-blocking layer (14) consisting of GaAs of the opposite conductivity type and formed on the substrate (13), and a plurality of semiconductor layers laminated on the base structure by a liquid-phase epitaxial growth method, said semiconductor layers performing a laser function; characterized in that said base structure further comprising a channel deformation-preventing layer (43) formed on the current-inhibiting layer (14), and an oxidation-preventing layer (44) formed on the channel deformation-preventing layer (43).
Claim 7
Dependent Claim
96 words
A semiconductor laser comprising: a semiconductor base structure provided with an etched channel and including a GaAs substrate (13) of one conductivity type, a current-blocking layer (14) consisting of GaAs of the opposite conductivity type and formed on the substrate (13), and a plurality of semiconductor layers laminated on the base structure by a liquid-phase epitaxial growth method, said semiconductor layers performing a laser function; characterized in that said base structure further comprising a channel deformation-preventing layer (43) formed on the current-inhibiting layer (14), and an oxidation-preventing layer (44) formed on the channel deformation-preventing layer (43).
Claim 8
Dependent Claim
28 words
The semiconductor laser according to claim 5, characterized in that the channel deformation-preventing layer (43) is formed of Ga 1-x Al x As (0.1 ≦ x < 1).
Claim 9
Dependent Claim
17 words
The semiconductor laser-according to claim 5, characterized in that the oxidation-preventing layer (44) is formed of GaAs.
Claim 10
Dependent Claim
24 words
The semiconductor laser according to claim 5, characterized in that the channel deformation-preventing layer (43) has a thickness of 500 A to 2000 A.
Claim 11
Dependent Claim
25 words
The semiconductor laser according to claim 5, characterized in that the current-blocking layer (14) is of n-type and the GaAs substrate (13) is of p-type.
Claim 12
Dependent Claim
103 words
A semiconductor laser comprising: a semiconductor base structure provided with an etched channel and including a GaAs substrate (50) of one conductivity type, a current-blocking layer (52) consisting of GaAs of the opposite conductivity type, and a plurality of semiconductor layers laminated on the base structure by a liquid-phase epitaxial growth method, said semiconductor layers performing a laser function; characterized in that said base structure further comprising a first channel deformation-preventing layer (51) formed on the substrate (50), a second channel deformation-preventing layer (53) formed on the current-blocking layer (52), and an oxidation-preventing layer (54) formed on the second channel deformation-preventing layer (53).
Claim 13
Dependent Claim
103 words
A semiconductor laser comprising: a semiconductor base structure provided with an etched channel and including a GaAs substrate (50) of one conductivity type, a current-blocking layer (52) consisting of GaAs of the opposite conductivity type, and a plurality of semiconductor layers laminated on the base structure by a liquid-phase epitaxial growth method, said semiconductor layers performing a laser function; characterized in that said base structure further comprising a first channel deformation-preventing layer (51) formed on the substrate (50), a second channel deformation-preventing layer (53) formed on the current-blocking layer (52), and an oxidation-preventing layer (54) formed on the second channel deformation-preventing layer (53).
Claim 14
Dependent Claim
32 words
The semiconductor laser according to claim 10, characterized in that each of the first and second. channel deformation-preventing layers is formed of Ga 1-x Al x As (0.1 < x < 1).
Claim 15
Dependent Claim
18 words
The semiconductor laser according to claim 10, characterized in that the oxidation-preventing layer (54) is formed of GaAs.
Claim 16
Dependent Claim
28 words
The semiconductor laser according to claim 10, characterized in that each of the first and second channel deformation-preventing layers has a thickness of 500 A to 2000 A.
Claim 17
Dependent Claim
25 words
The semiconductor laser according to claim 10, characterized in that the current-blocking layer (52) are of n-type and the GaAs substrate (50) is of p-type.
References Cited (Backward Citations)
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