EP0123936A1
Expired / Lapsed
EP
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Semiconductor device
Assignee: Hitachi Ltd
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Filing: 1984-03-30
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Granted: —
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Expires: 2004-03-30
Abstract
Abstract Disclosed is a semiconductor device, especially MISFET, which can ensure high breakdown voltage and operate at high speed. The source and drain regions (5, 6; 24, 25) have an impurity concentration not exceeding 10 20 cm -3 , and on the surface of the impurity regions there is a metal silicide layer (12, 214) with a very thin, highly conductive layer (13) formed underneath the silicide. In the case of CMOS, the impurity concentration of the n-type drain or source regions (24, 25) does not exceed 10 20 cm -3 whereas the impurity concentration of an p-type drain or source regions does not exceed 10 19 cm -3 and at least one portion (214) of the drain or source region (24,25) is made of a metal silicide, thereby effectively preventing the latch-up phenomenon. The characteristics of the MISFET may be further improved by having a gate sidewall insulator of a high dielectric constant.
Inventors
- 👤 Masatada Horiuchi
- 👤 Ken Yamaguchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 20:36
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D30/01; H10D30/021; H10D30/0223; H10D30/027; H10D30/0275; H10D62/80; H10D62/83; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10D64/259; H10D64/60; H10D64/62; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0172; H10D84/0174; H10D84/02; H10D84/03; H10D84/038; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/858; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
95 words
A semiconductor device, characterised in that the maximum surface concentration in a drain or source region (5, 6) of the conductive type opposite to that of a semiconductor substrate (1) is equal to or higher than 10 -18 cm -3 but lower than 10 cm ; and that at least one portion of the surface of said drain or source region (5, 6) is in contact with a layer (12) of a refractory metal or its silicide and a highly conductive layer (13) having a highly concentrated region of a thickness not exceeding 50 nm.
Claim 2
Dependent Claim
95 words
A semiconductor device, characterised in that the maximum surface concentration in a drain or source region (5, 6) of the conductive type opposite to that of a semiconductor substrate (1) is equal to or higher than 10 -18 cm -3 but lower than 10 cm ; and that at least one portion of the surface of said drain or source region (5, 6) is in contact with a layer (12) of a refractory metal or its silicide and a highly conductive layer (13) having a highly concentrated region of a thickness not exceeding 50 nm.
Claim 3
Dependent Claim
26 words
The device of claim 1, characterised in that said highly conductive layer (13) is made of only a layer of a refractory metal or its silicide.
Claim 4
Dependent Claim
29 words
The device of claim 1 or 2, characterised in that at least one portion of said drain or source region (5, 6) is present beneath a gate electrode (4).
Claim 5
Independent Claim
33 words
The device of any of claims 1 to 3, characterised in that at least one of said drain or source regions (5, 6) is formed by at least two steps of ion implantation.
Claim 6
Dependent Claim
24 words
The device of claim 3 or 4, characterised in that said gate electrode (4) is made of a thin film of molybdenum or silicon.
Claim 7
Independent Claim
40 words
The device of any of claims 3 to 5, characterised in that a gate side wall insulator (19) having a higher specific dielectric constant than that of silicon oxide is formed on the side wall of said gate electrode (4).
Claim 8
Dependent Claim
20 words
The device of claim 6, characterised in that said side wall insulator (19) is made of a silicon nitride film.
Claim 9
Dependent Claim
84 words
A semiconductor device, characterised in that there are formed in an impurity diffused region (22) an n-type drain or source region (24, 25) having a maximum surface concentration of 10 18 to 10 20 cm -3 and a p-type drain or source region having a maximum surface concentration of 10 17 to 10 19 cm- 3 ; and that at least one portion of said drain or source region (24, 25) is junctioned to a layer (214) of a refractory metal or its silicide.
Claim 10
Dependent Claim
84 words
A semiconductor device, characterised in that there are formed in an impurity diffused region (22) an n-type drain or source region (24, 25) having a maximum surface concentration of 10 18 to 10 20 cm -3 and a p-type drain or source region having a maximum surface concentration of 10 17 to 10 19 cm- 3 ; and that at least one portion of said drain or source region (24, 25) is junctioned to a layer (214) of a refractory metal or its silicide.
Claim 11
Dependent Claim
54 words
The device of claim 8, characterised in that one portion of said drain or source region (24, 25) is formed adjacent to a gate electrode (29) which is formed through an insulator (28) on the surface of a semiconductor substrate, an insulator (213) being formed on the side wall of said gate electrode (29)
Claim 12
Dependent Claim
68 words
The device of claim 8 or 9, characterised in that said n-type drain or source region (24, 25) is composed in the normal direction of three impurity concentration distribution regions, i.e. an impurity segregated region (A) just beneath said layer (214) of the refractory metal or its silicide, a substantially uniformly distributed region (B) in a thin silicon film, and a region (C) having a steep concentration distribution.
Claim 13
Dependent Claim
30 words
The device of claim 9, characterised in that one portion (216) of said drain or source region (24, 25) is made of a thin film of polycrystalline or amorphous material.
References Cited (Backward Citations)
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