EP0117957A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Solid-state device having a plurality of optical functions
Assignee: Toshiba Corp
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Filing: 1983-12-30
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Granted: —
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Expires: 2003-12-30
Abstract
Abstract A solid-state optical device with a plurality of cells having a plurality of optical functions is disclosed. Each of the cells comprises a transparent substrate (11), an anti-reflection film (29) formed on the lower surface of the transparent substrate, a MOS transistor (1) and a capacitor (8) formed on the upper surface of the transparent substrate, a liquid crystal display device (7) formed on the MOS transistor and capacitor, and window (18, 22) for leading a light signal incident on the liquid crystal display device from above to the transparent substrate. At least either a channel region (15) of the MOS transistor and a region (16) intervening between pair electrodes of the capacitor is formed of a photoconductive film. A transparent medium intervenes between the transparent substrate and photoconductive film such that light signal led through the window to the transparent substrate is reflected by an object (30) disposed in contact with anti-reflection film to reach the photoconductive film, thereby generating carriers therein.
Inventors
- 👤 Nozomu Harada
- 👤 Yasuhisa Oana
- 👤 Keisuke Ogi
- 👤 Koji Izawa
- 👤 Akira Taya
- 👤 Masanori Sakamoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 20:52
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1368; G02F1/135; G02F1/1354; H; H04; H04N; H04N1/00; H04N1/024; H04N1/028; G02F1/136213
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
332 words
A solid-state optical device with a plurality of cells (9) having a plurality of optical functions, each of said cells (9) comprising: a transparent substrate (11); a MOS transistor (1) formed on the upper surface of said transparent substrate and including a source-drain path having one end connected to a data line, a channel region (15), a gate insulating film (13) and a gate electrode (12) connected to an address line (3); a capacitor (8) formed on the upper surface of said transparent substrate and having a pair of electrodes (14, 17b), one of said electrodes (17b) being connected to the other end of said source-drain path of said MOS transistor; an insulating layer (9) formed on the upper surface of said MOS transistor and capacitor; a conductive layer (21) formed on said insulating layer and connected to the other end of said source-drain path of said MOS transistor; and a display cell (7) formed on said conductive layer, said display cell including a display material layer (27) formed on said conductive layer and a transparent conductive layer (26) formed on said display material layer, the light transmittance of said display material layer being variable according to a voltage applied between said conductive layer and transparent conductive layer; CHARACTERIZED IN THAT: an anti-reflection film (29) formed on the lower surface of said transparent substrate; at least either said channel region (15) of said MOS transistor or a region (16) intervening between said pair electrodes of said capacitor is formed of a photoconductive film; a transparent member (12, 13, 14) intervenes between said photoconductive film and transparent substrate to let a light signal be incident on said photoconductive film; said insulating film (19) formed on said upper surface of said MOS transistor and capacitor are formed of a transparent material; said conductive layer (21) formed on said insulating film is transparent; and light transmitting means (18, 22) is provided to lead light incident on said display cell from above to said transparent substrate.
Claim 2
Dependent Claim
332 words
A solid-state optical device with a plurality of cells (9) having a plurality of optical functions, each of said cells (9) comprising: a transparent substrate (11); a MOS transistor (1) formed on the upper surface of said transparent substrate and including a source-drain path having one end connected to a data line, a channel region (15), a gate insulating film (13) and a gate electrode (12) connected to an address line (3); a capacitor (8) formed on the upper surface of said transparent substrate and having a pair of electrodes (14, 17b), one of said electrodes (17b) being connected to the other end of said source-drain path of said MOS transistor; an insulating layer (9) formed on the upper surface of said MOS transistor and capacitor; a conductive layer (21) formed on said insulating layer and connected to the other end of said source-drain path of said MOS transistor; and a display cell (7) formed on said conductive layer, said display cell including a display material layer (27) formed on said conductive layer and a transparent conductive layer (26) formed on said display material layer, the light transmittance of said display material layer being variable according to a voltage applied between said conductive layer and transparent conductive layer; CHARACTERIZED IN THAT: an anti-reflection film (29) formed on the lower surface of said transparent substrate; at least either said channel region (15) of said MOS transistor or a region (16) intervening between said pair electrodes of said capacitor is formed of a photoconductive film; a transparent member (12, 13, 14) intervenes between said photoconductive film and transparent substrate to let a light signal be incident on said photoconductive film; said insulating film (19) formed on said upper surface of said MOS transistor and capacitor are formed of a transparent material; said conductive layer (21) formed on said insulating film is transparent; and light transmitting means (18, 22) is provided to lead light incident on said display cell from above to said transparent substrate.
Claim 3
Dependent Claim
21 words
The solid-state optical device according to claim 1, characterized in that said photoconductive film (15, 16) is formed of amorphous silicon.
Claim 4
Dependent Claim
43 words
The solid-state optical device according to claim 2, characterized in that said photoconductive film is formed of an intrinsic amorphous silicon layer contiguous to said first electrode and a p-type amorphous silicon layer intervening bettween said intrinsic amorphous silicon layer and second electrode.
Claim 5
Dependent Claim
19 words
The solid-state optical device according to claim 1, characterized in that said display cell is a liquid crystal cell.
Claim 6
Dependent Claim
70 words
The solid-state optical device according to claim 1, characterized in that two-dimensional lenticule lenses are formed under said transparent substrate to focus light reflected from an object (30) disposed underneath said anti-reflection film on said respective cells (40 1 to 40 n ), said two-dimensional lenticule lenses corresponding in number to the number of said cells, said anti-reflection film (29) being formed on the surface of said two-dimensional lenticule lenses.
Claim 7
Dependent Claim
55 words
The solid-state optical device according to claim 1, characterized in that said transparent substrate is formed of optical fiber plates (42) corresponding in number to the number of said cells, each said optical fiber plate corresponding to an associated one of said cells and being capable of leading said light signal to said associated cell.
Claim 8
Dependent Claim
37 words
The solid-state optical device according to claim 1, characterized in that said light transmitting means has a window (22) formed in said non-transparent conductive layer, said light signal being led through said window to said transparent substrate.
Claim 9
Dependent Claim
21 words
The solid-state optical device according to claim 1, characterized in that said MOS transistor is a staggered type thin film transistor.
References Cited (Backward Citations)
No citation records indexed.
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