Power semiconductor module and package

Claim 2

A semiconductor module comprising: a semiconductor die (14; 14'; 114) which embodies at least one semiconductor device; a supporting pad (16; 16'; 116) of approximately the same thermal coefficient of expansion as said semiconductor die, said supporting pad bonded to said die to support said die and conduct heat therefrom; a rigid, heat conductive electrically insulated shell (18; 18'; 118) having a recess (19; 19', 119) therein dimensioned to receive said semiconductor die when said shell is secured to said supporting pad to overlie said die and thus sealably enclose said die, said shell having at least one metallized solder coated passageway (21a, 22a; 53; 21a', 22a'; 121a, 121b) therethrough which is in communication with said shell recess; and at least one electrically conductive member (22, 24; 22', 24 ' ;173a, 173b) disposed through said shell passageway for contact with said semiconductor die, the portion (22a, 24a; 52; 25a', 25b'; 125a, 125b) of said conductive member contiguous with said metallized and solder-coated shell passages being itself solder-coated for solder bonding to said shell so that said shell absorbs shock and thermal stress as applied to said conductive member to protect said die during and after manufacturing to facilitate semiconductor module assembly.

Claim 3

The semiconductor module according to claim 1 wherein said supporting pad is a molybdenum plate (16; 16 1 ; 116) having a solder-coated upper surface for solder bonding to said semiconductor die (14; 14'; 114).

Claim 4

The semiconductor module according to claim 2 wherein said rigid, heat conductive, electrically insulating shell is a ceramic die cover (18; 18 ' ; 118) having metallized and solder-coated lower edges (20) for solder bonding to said molybdenum plate (16; 16'; 116) to hermetically seal said die (14; 14'; 114) within the recess (19; 19'; 119) of said ceramic die cover (18; 18'; 118).

Claim 5

The semiconductor module according to claim 2 wherein said rigid, heat conductive, electrically insulating shell comprises a ceramic die cover (18; 18'; 118) whose lower edges are bonded by a polymer sealant to said molybdenum plate (16; 16'; 116) to seal said semiconductor die (14; 14'; 114) within the recess (19; 19'; 119) of said die cover (18; 18'; 118).

Claim 6

The semiconductor module according to anyone of the claims 1 to 4 wherein said electrically conductive member (22, 24) comprises a metal strip having a solder-coated finger (22a, 24a) disposed through said metallized, solder-coated passage in said shell to contact said semiconductor die and make electrical connection therewith.

Claim 7

The semiconductor module according to anyone of the claims 1 to 4 wherein said electrically conductive member (12', 24!; 173a, 173b) is a pin (25a', 25b'; 125a, 125b) swaged through said passageway (21a', 21b'; 121a, 121b) in said heat conductive shell (18'; 118), said pin being solder-coated to enable a solder bond with said metallized and solder-coated shell passageway.

Claim 8

The semiconductor module according to anyone of the claims 1 to 6 further including: a heat conductive base plate (30; 30 1 ); an insulating subplate (28; 28 1 ) interposed between said supporting pad (16; 16') and said base plate (30; 30') for insulating said supporting pad from said base plate and for carrying heat from said supporting pad to said base plate; and an exterior shell (32; 32 1 ) having a recess (34; 34 1 ) therein for receiving said module (12a, 12b; 12a'), said shell (32; 32') having passageways (36; 36') therethrough to enable said electrically conductive members (22, 24, 26; 22', 24', 26') to extend beyond said exterior shell.

Claim 9

A semiconductor package comprising: a heat conductive base plate (30; 30'); a heat conductive electrically insulated subplate (28; 28 1 ) bonded to said base plate so as to be in face-to-face relationship therewith and supported thereby; a first electrode (26; 26 1 ) bonded to said insulated subplate, a semiconductor die (14; 14') embodying at least one semiconductor device; a supporting pad (16; 16') of approximately the same thermal coefficient as said semiconductor die, said supporting pad bonded to and interposed between said insulated subplate and said semiconductor die; a rigid heat conductive, electrically insulating shell (18; 18') having a recess (19; 19') therein dimensioned to receive said die, said shell having a metallized edge (20) for setting upon said supporting pad (16) when said heat conductive, electrically insulating cover (18; 18') is fastened to said supporting pad (16; 16') to overlie said die (14; 14') and said supporting pad; said shell (18; 18') having at least one metallized and solder-coated passageway (21a, 21b; 53; 21a', 22a') extending therethrough in communication with said recess (19; 19'); at least one electrode (22, 24; 22', 24') extending through said shell passageway for physically contacting said semiconductor die (14; 14') to make electrical connection therewith, said electrode having a solder-coated portion (22a, 24a; 52; 25a', 25b') in contact with said metallized and solder-coated shell passageway (21a, 21b; 53; 25a', 25b') for solder bonding to said shell (18; 18') so that said shell absorbs shock and thermal stress as applied to said electrode so as to protect said die (14; 14'); an outer housing (32; 32') having a recess (34; 34') dimensioned to receive said shell and having a passageway.(36) therethrough to receive said electrode (22, 24; 22', 24') when said outer housing (32; 32') is fastened to said base plate (30, 30') to overlie said shell; and a heat conductive sealant (45) for filling said recess (34; 34') to seal and secure said shell (18; 18') and said supporting pad (16; 16') within said recess (34; 34') and to block any dielectric leakage paths and conducting any heat dissipated by said shell and said supporting pad.

Claim 10

A semiconductor package comprising: a heat conductive base plate (30; 30'); a heat conductive electrically insulated subplate (28; 28 1 ) bonded to said base plate so as to be in face-to-face relationship therewith and supported thereby; a first electrode (26; 26 1 ) bonded to said insulated subplate, a semiconductor die (14; 14') embodying at least one semiconductor device; a supporting pad (16; 16') of approximately the same thermal coefficient as said semiconductor die, said supporting pad bonded to and interposed between said insulated subplate and said semiconductor die; a rigid heat conductive, electrically insulating shell (18; 18') having a recess (19; 19') therein dimensioned to receive said die, said shell having a metallized edge (20) for setting upon said supporting pad (16) when said heat conductive, electrically insulating cover (18; 18') is fastened to said supporting pad (16; 16') to overlie said die (14; 14') and said supporting pad; said shell (18; 18') having at least one metallized and solder-coated passageway (21a, 21b; 53; 21a', 22a') extending therethrough in communication with said recess (19; 19'); at least one electrode (22, 24; 22', 24') extending through said shell passageway for physically contacting said semiconductor die (14; 14') to make electrical connection therewith, said electrode having a solder-coated portion (22a, 24a; 52; 25a', 25b') in contact with said metallized and solder-coated shell passageway (21a, 21b; 53; 25a', 25b') for solder bonding to said shell (18; 18') so that said shell absorbs shock and thermal stress as applied to said electrode so as to protect said die (14; 14'); an outer housing (32; 32') having a recess (34; 34') dimensioned to receive said shell and having a passageway.(36) therethrough to receive said electrode (22, 24; 22', 24') when said outer housing (32; 32') is fastened to said base plate (30, 30') to overlie said shell; and a heat conductive sealant (45) for filling said recess (34; 34') to seal and secure said shell (18; 18') and said supporting pad (16; 16') within said recess (34; 34') and to block any dielectric leakage paths and conducting any heat dissipated by said shell and said supporting pad.

Claim 11

The semiconductor package according to claim 8 wherein said base plate (30; 30') comprises a copper pad.

Claim 12

The semiconductor package according to claim 8 or 9 wherein said heat conductive, electrically insulated subplate (28; 28') comprises a ceramic pad having metallized top and bottom surfaces.

Claim 13

The semiconductor package according to anyone of the claims 8 to 10 wherein said supporting pad comprises a molybdenum plate (16; 16 1 ) having a solder-coated upper surface and wherein said shell comprises a ceramic die cover (18; 18 1 ) having metallized, solder-coated lower edges for solder bonding to said metallized molybdenum plate (16; 16') to hermetically seal said die (14; 14') within the recess (19; 19') of said ceramic die cover.

Claim 14

The semiconductor package according to anyone of the claims 8 to 10 wherein said supporting pad comprises a molybdenum plate (16; 16') and wherein said shell comprises a ceramic die cover (18; 18') having lower edges bonded to said molybdenum plate by polymer sealant to overlie said die.

Claim 15

The semiconductor package according to anyone of the claims 8 to 12 wherein said outer housing comprises a plastic shell (32; 32').

Claim 16

A semiconductor package comprising: an electrically conductive heat dissipative base plate (30); a heat conductive, electrically insulating subplate (28) having a metallized and solder-coated top and bottom surfaces, said bottom metallized surface of said insulating subplate solder bonded to said base plate (30) so as to be supported therefrom; a first electrode (26) having a solder-coated portion (26b) solder bonded to said top metallized surface of said insulating subplate (28); a first semiconductor die (14) embodying a Darlington transistor thereon, said Darlington transistor having first and second stage transistor elements; an electrically conductive supporting pad (16) having a thermal co-efficient of expansion substantially similar to that of said first semiconductor die (14), said supporting pad having bottom and top solder-coated surfaces which are solder bonded to said first electrode (26) and to said semiconductor die (14), respectively, to provide a conductive path between the collector of said second stage transistor element and said supporting pad; a rigid, heat conductive, electrically insulating shell (18) having a recess (19) therein dimensioned to receive said die (14), said shell (18) having metallized lower edges (20) adjacent to said recess (19) for solder bonding to said supporting pad (16) so as to overlie said die (14), said shell having first (21a), second (53), and third (21b) metallized, solder-coated passages therethrough in communication with said recess (19); a second electrode (22) having first (22a) and second (48) solder-coated fingers co-extensive therewith, said first electrode finger (22a) extending through said first shell.passageway (21a) to contact said die (14) and make electrical connection with the base of said first stage transistor element, said first electrode finger (22a) being solder bonded to said shell (18) so that shock and thermal stresses applied to said second electrode (22) are transmitted through said shell (18) to said base plate (30); an electrically conductive pin (52) disposed through said second shell passageway (53) for electrical connection to the emitter of said first stage transistor element, said pin (52) being solder-coated for electrical bonding to said shell (18); a second semiconductor die (50) embodying a diode thereon, said second die interposed between said second finger (48) of said second electrode (22) and said electrically conductive pin (52) such that the anode and cathode of said diode embodied on said die (50) are electrically connected to said pin and said second finger (48) of said second electrode (22), respectively; a third electrode (24) having first (24a) and second (57) solder-coated fingers, said first solder-coated finger (24a) extending through said third shell passageway (21b) to contact said first semiconductor die (14) and electrically connect with the emitter of said second stage transistor element, said first finger (24a) of said third electrode (24) being solder bonded to said shell (18) so that shock and thermal stress is applied to said third electrode (24) are carried by said shell (18) to said base plate (30); a third semiconductor die (56) embodying a diode thereon, said third semiconductor die interposed between said electrically conductive subplate (28) and said second finger (57) of said third electrode (24) so that the anode and cathode of said diode are connected to said second finger (57) of said third electrode (24) and said subplate (28), respectively; and an outer housing (32) having a recess (34) therein dimensioned to receive said shell (18) and said subplate (28) when said shell is fastened to said base plate.

Claim 17

A semiconductor package comprising: an electrically conductive heat dissipative base plate (30); a heat conductive, electrically insulating subplate (28) having a metallized and solder-coated top and bottom surfaces, said bottom metallized surface of said insulating subplate solder bonded to said base plate (30) so as to be supported therefrom; a first electrode (26) having a solder-coated portion (26b) solder bonded to said top metallized surface of said insulating subplate (28); a first semiconductor die (14) embodying a Darlington transistor thereon, said Darlington transistor having first and second stage transistor elements; an electrically conductive supporting pad (16) having a thermal co-efficient of expansion substantially similar to that of said first semiconductor die (14), said supporting pad having bottom and top solder-coated surfaces which are solder bonded to said first electrode (26) and to said semiconductor die (14), respectively, to provide a conductive path between the collector of said second stage transistor element and said supporting pad; a rigid, heat conductive, electrically insulating shell (18) having a recess (19) therein dimensioned to receive said die (14), said shell (18) having metallized lower edges (20) adjacent to said recess (19) for solder bonding to said supporting pad (16) so as to overlie said die (14), said shell having first (21a), second (53), and third (21b) metallized, solder-coated passages therethrough in communication with said recess (19); a second electrode (22) having first (22a) and second (48) solder-coated fingers co-extensive therewith, said first electrode finger (22a) extending through said first shell.passageway (21a) to contact said die (14) and make electrical connection with the base of said first stage transistor element, said first electrode finger (22a) being solder bonded to said shell (18) so that shock and thermal stresses applied to said second electrode (22) are transmitted through said shell (18) to said base plate (30); an electrically conductive pin (52) disposed through said second shell passageway (53) for electrical connection to the emitter of said first stage transistor element, said pin (52) being solder-coated for electrical bonding to said shell (18); a second semiconductor die (50) embodying a diode thereon, said second die interposed between said second finger (48) of said second electrode (22) and said electrically conductive pin (52) such that the anode and cathode of said diode embodied on said die (50) are electrically connected to said pin and said second finger (48) of said second electrode (22), respectively; a third electrode (24) having first (24a) and second (57) solder-coated fingers, said first solder-coated finger (24a) extending through said third shell passageway (21b) to contact said first semiconductor die (14) and electrically connect with the emitter of said second stage transistor element, said first finger (24a) of said third electrode (24) being solder bonded to said shell (18) so that shock and thermal stress is applied to said third electrode (24) are carried by said shell (18) to said base plate (30); a third semiconductor die (56) embodying a diode thereon, said third semiconductor die interposed between said electrically conductive subplate (28) and said second finger (57) of said third electrode (24) so that the anode and cathode of said diode are connected to said second finger (57) of said third electrode (24) and said subplate (28), respectively; and an outer housing (32) having a recess (34) therein dimensioned to receive said shell (18) and said subplate (28) when said shell is fastened to said base plate.

Claim 18

The semiconductor package according to claim 14 wherein said heat conductive, electrically insulating subplate (28) comprises a ceramic substrate.

Claim 19

The semiconductor package according to claim 14 or 15 wherein said supporting pad (16) comprises a molybdenum substrate.

Claim 20

The semiconductor package according to anyone of the claims 14 to 16 wherein said rigid, heat conductive, electrically insulating shell (18) comprises a ceramic die cover.

Claim 21

A semiconductor module for surface mounting on a printed circuit board or the like comprising: a semiconductor die (114) embodying a semiconductor device thereon; an electrically conductive mounting pad (116) having approximately the same thermal coefficient of expansion as said die, said mounting pad having a solder coating on its bottom surface to facilitate solder bonding to the circuit board (113) and said mounting pad having a solder coating on its top surface to facilitate solder bonding to said die (114) so that said mounting pad (116) is interposed between circuit board (113) and said die (114); a rigid heat conductive, electrically insulating shell (118) having a recess (119) therein dimensioned to receive said die, said shell having metallized and solder-coated edges for solder bonding to said mounting pad (116) to overlie said die (114), said shell (118) further having at least one passageway (121a, 121b) into said recess (119), the contact surfaces of said passageway being metallized and solder-coated; at least one conductive member (125a, 125b) swaged through said passageway (121a, 121b) of said shell (118) so as to protrude from said shell for contact with said die (114), said conductive member having a solder-coated tip for solder bonding to said die (114) and having a solder coating on the conductive member surfaces contiguous with the contact surfaces of said shell passageway (121a., 121b) for solder bonding thereto, said conductive member (125a, 173a, 125b, 173b) extending from said shell (118) to the circuit board surface (113) for electrical connection therewith.

Claim 22

A semiconductor module for surface mounting on a printed circuit board or the like comprising: a semiconductor die (114) embodying a semiconductor device thereon; an electrically conductive mounting pad (116) having approximately the same thermal coefficient of expansion as said die, said mounting pad having a solder coating on its bottom surface to facilitate solder bonding to the circuit board (113) and said mounting pad having a solder coating on its top surface to facilitate solder bonding to said die (114) so that said mounting pad (116) is interposed between circuit board (113) and said die (114); a rigid heat conductive, electrically insulating shell (118) having a recess (119) therein dimensioned to receive said die, said shell having metallized and solder-coated edges for solder bonding to said mounting pad (116) to overlie said die (114), said shell (118) further having at least one passageway (121a, 121b) into said recess (119), the contact surfaces of said passageway being metallized and solder-coated; at least one conductive member (125a, 125b) swaged through said passageway (121a, 121b) of said shell (118) so as to protrude from said shell for contact with said die (114), said conductive member having a solder-coated tip for solder bonding to said die (114) and having a solder coating on the conductive member surfaces contiguous with the contact surfaces of said shell passageway (121a., 121b) for solder bonding thereto, said conductive member (125a, 173a, 125b, 173b) extending from said shell (118) to the circuit board surface (113) for electrical connection therewith.

Claim 23

The semiconductor module according to claim 18 wherein said conductive member (125a, 125b) extends through the circuit board.

Claim 24

The semiconductor module according to claim 19 further including a "U" shaped heat conductive member (175) having its upper interior surface electrically bonded to said electrically conductive mounting pad (116) of said semiconductor module (112a) when inverted, said conductive member having a pair of legs (176a, 176b) each extending through said circuit board for electrical connection therewith and said heat conductive member (175) having at least one outwardly extending fin (180) for radiating heat.