EP0116117A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
A method of establishing electrical connections at a semiconductor device
Assignee: Abbott Laboratories
•
Filing: 1983-10-15
•
Granted: —
•
Expires: 2003-10-15
Abstract
Abstract This invention relates to semiconductor sensors for use as chemical sensitive field effect transistor devices (CSFET) and more particularly to an improved CSFET device and method of making such devices to provide reliable, commercial chemical sensitive field effect transistor devices.
Inventors
- 👤 Ashesh Eric Bose
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 23:38
CPC Classifications
G; G01; G01N; G01N27/00; G01N27/26; G01N27/403; G01N27/414; H; H10; H10W; H10W70/00; H10W70/099; H10W70/60; H10W70/62; H10W70/65; H10W70/658; H10W74/00; H10W74/01; H10W74/016; H10W70/67; H10W70/68; H10W70/682; H10W72/00; H10W72/071; H10W72/073; H10W72/07331; H10W72/07337; H10W72/075; H10W72/07531; H10W72/07532; H10W72/30; H10W72/351; H10W72/353; H10W72/354; H10W72/50; H10W72/531; H10W72/536; H10W72/541; H10W72/5445; H10W90/00; H10W90/701; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
59 words
A method of establishing electrical connections to a semiconductor device comprising: providing a semiconductor chip with a plurality of contact points; providing a base to hold and position the chip; mounting the chip to the base; and printing a plurality of conductive elements on the base and onto the contact points of the chip to provide electrical connections thereto.
Claim 2
Independent Claim
59 words
A method of establishing electrical connections to a semiconductor device comprising: providing a semiconductor chip with a plurality of contact points; providing a base to hold and position the chip; mounting the chip to the base; and printing a plurality of conductive elements on the base and onto the contact points of the chip to provide electrical connections thereto.
Claim 3
Dependent Claim
45 words
The method of claim 1, including the steps of providing a cavity in said base adapted to accommodate said semiconductor chip, adhesively mounting said chip in said cavity, and screen printing said conductive elements on the base and onto the contact points of the chip.
Claim 4
Independent Claim
91 words
A method of manufacturing a chemical sensitive field effect transistor (CSFET) device comprising the steps of: providing a semiconductor chip with a field effect transistor (FET) having a gate region and a plurality of respective conductive electrodes; providing a substrate for said field effect transistor; mounting said field effect transistor to said substrate; printing a plurality of conductive elements on said substrate and onto corresponding respective FET conductive electrodes to form respective electrical connections therewith; and hermetically sealing said FET and substrate from the environment except for said FET gate region.
Claim 5
Independent Claim
91 words
A method of manufacturing a chemical sensitive field effect transistor (CSFET) device comprising the steps of: providing a semiconductor chip with a field effect transistor (FET) having a gate region and a plurality of respective conductive electrodes; providing a substrate for said field effect transistor; mounting said field effect transistor to said substrate; printing a plurality of conductive elements on said substrate and onto corresponding respective FET conductive electrodes to form respective electrical connections therewith; and hermetically sealing said FET and substrate from the environment except for said FET gate region.
Claim 6
Dependent Claim
40 words
The method of claim 3, including the steps of providing a cavity in said substrate adapted to accommodate said semiconductor chip, adhesively mounting said semiconductor chip in said substrate cavity, and wherein said printing step is provided by screen printing.
Claim 7
Dependent Claim
40 words
The method of claim 4, including the steps of providing an insulating cover having an opening adapted to said FET gate region, and mounting said insulating cover on said substrate with said opening in alignment with said FET gate region.
Claim 8
Dependent Claim
24 words
The method of claim 3, including the steps of injection molding said FET and substrate to encapsulate same except for said FET gate region.
Claim 9
Independent Claim
148 words
A method of manufacturing a chemical sensitive field effect transistor (CSFET) device comprising the steps of: providing a semiconductor chip with a field effect transistor (FET) having a gate region and a plurality of respective conductive electrodes; providing a substrate having a surface and a cavity therein adapted to receive said semiconductor chip; insertably mounting said semiconductor chip in said cavity so that said conductive electrodes are substantially flush with the substrate surface; printing a dielectric adhesive pad on said substrate surface to overlie a portion of said chip and thereby adhesively secure said chip in said cavity; printing a plurality of conductive elements on said substrate surface and-onto corresponding respective F ET conductive electrodes to form respective electrical connections therewith; printing a dielectric adhesive on said substrate surface, conductive elements, and said chip to hermetically seal said surface, elements and chip except for said FET gate region.
Claim 10
Independent Claim
148 words
A method of manufacturing a chemical sensitive field effect transistor (CSFET) device comprising the steps of: providing a semiconductor chip with a field effect transistor (FET) having a gate region and a plurality of respective conductive electrodes; providing a substrate having a surface and a cavity therein adapted to receive said semiconductor chip; insertably mounting said semiconductor chip in said cavity so that said conductive electrodes are substantially flush with the substrate surface; printing a dielectric adhesive pad on said substrate surface to overlie a portion of said chip and thereby adhesively secure said chip in said cavity; printing a plurality of conductive elements on said substrate surface and-onto corresponding respective F ET conductive electrodes to form respective electrical connections therewith; printing a dielectric adhesive on said substrate surface, conductive elements, and said chip to hermetically seal said surface, elements and chip except for said FET gate region.
Claim 11
Dependent Claim
19 words
The method of claim 7, including the step of applying a chemical sensitive material to said FET gate region.
Claim 12
Independent Claim
145 words
A method of manufacturing a chemical sensitive field effect transistor (CSFET) device comprising the steps of: providing a semiconductor chip with a field effect transistor (FET) having a gate region and a plurality of respective conductive electrodes; providing a substrate having a surface and a cavity therein adapted to receive said semiconductor chip; insertably mounting said semiconductor chip in said cavity so that said FET conductive electrodes are substantially flush with the substrate surface; printing a plurality of conductive elements on said substrate surface and onto corresponding respective FET conductive electrodes to form respective electrical connections therewith; applying a dielectric film to hermetically seal said substrate, plurality of conductive elements, and semiconductor chip except for said FET gate region; providing an insulating cover having an opening; and bonding said insulating cover to said dielectric film with said opening in registration with said FET gate region.
Claim 13
Independent Claim
145 words
A method of manufacturing a chemical sensitive field effect transistor (CSFET) device comprising the steps of: providing a semiconductor chip with a field effect transistor (FET) having a gate region and a plurality of respective conductive electrodes; providing a substrate having a surface and a cavity therein adapted to receive said semiconductor chip; insertably mounting said semiconductor chip in said cavity so that said FET conductive electrodes are substantially flush with the substrate surface; printing a plurality of conductive elements on said substrate surface and onto corresponding respective FET conductive electrodes to form respective electrical connections therewith; applying a dielectric film to hermetically seal said substrate, plurality of conductive elements, and semiconductor chip except for said FET gate region; providing an insulating cover having an opening; and bonding said insulating cover to said dielectric film with said opening in registration with said FET gate region.
Claim 14
Dependent Claim
51 words
The method of claim 9, including the steps of providing a pre-formed epoxy mounting frame, inserting said epoxy mounting frame into said substrate cavity, inserting the semiconductor chip into the epoxy mounting frame, and bonding the semiconductor chip to the substrate with the FET electrodes substantialy flush with the substrate surface.
Claim 15
Dependent Claim
19 words
The method of claim 9, including the steps of applying a chemical sensitive material to the FET gate region.
Claim 16
Independent Claim
108 words
A method of manufacturing a chemical sensitive field effect transistor (CSFET) device comprising the steps of: providing a semiconductor chip with a. field effect transistor (FET) having a gate region and a plurality of respective conductive electrodes; providing a substrate for said field effect transistor; printing a plurality of conductive elements on a surface of said substrate; mounting said semiconductor chip to said substrate surface; bonding wire to form respective electrical connections between said plurality of conductive elements and said FET conductive electrodes; applying a room temperature vulcanizable material to said wire; and encapsulating by injection molding said substrate and semiconductor chip except for said FET gate region.
Claim 17
Independent Claim
108 words
A method of manufacturing a chemical sensitive field effect transistor (CSFET) device comprising the steps of: providing a semiconductor chip with a. field effect transistor (FET) having a gate region and a plurality of respective conductive electrodes; providing a substrate for said field effect transistor; printing a plurality of conductive elements on a surface of said substrate; mounting said semiconductor chip to said substrate surface; bonding wire to form respective electrical connections between said plurality of conductive elements and said FET conductive electrodes; applying a room temperature vulcanizable material to said wire; and encapsulating by injection molding said substrate and semiconductor chip except for said FET gate region.
Claim 18
Dependent Claim
45 words
A semiconductor device comprising: a base; a semiconductor chip mounted on said base, said chip having a plurality of contact points; and a plurality of printed conductive elements on the base and extending onto the contact points of the chip to provide electrical connections thereto.
Claim 19
Dependent Claim
45 words
A semiconductor device comprising: a base; a semiconductor chip mounted on said base, said chip having a plurality of contact points; and a plurality of printed conductive elements on the base and extending onto the contact points of the chip to provide electrical connections thereto.
Claim 20
Dependent Claim
25 words
A semiconductor device according to claim 13 wherein said base includes a cavity and further including means for adhesively mounting said chip in said cavity.
Claim 21
Dependent Claim
78 words
A chemical sensitive field effect transistor (CSFET) device comprising: a semiconductor chip including a field effect transistor (FET) having a gate region and a plurality of conductive electrodes; a substrate including means for mounting said semiconductor chip to said substrate; a plurality of elongated conductive elements located on said substrate and extending onto said semiconductor chip in direct electrical connection with respective conductive electrodes; and means for hermetically sealing said semiconductor chip except for said FET gate region.
Claim 22
Dependent Claim
78 words
A chemical sensitive field effect transistor (CSFET) device comprising: a semiconductor chip including a field effect transistor (FET) having a gate region and a plurality of conductive electrodes; a substrate including means for mounting said semiconductor chip to said substrate; a plurality of elongated conductive elements located on said substrate and extending onto said semiconductor chip in direct electrical connection with respective conductive electrodes; and means for hermetically sealing said semiconductor chip except for said FET gate region.
Claim 23
Dependent Claim
36 words
A CSFET device according to claim 15, wherein said substrate includes a surface having a cavity adapted to receive said semiconductor chip and enable said FET conductive electrodes to lie substantially flush with said substrate surface.
Claim 24
Dependent Claim
21 words
A CSFET device according to claim 16, including a dielectric adhesive pad adapted to adhesively mount said chip in said cavity.
Claim 25
Dependent Claim
27 words
A CSFET device according to claim 16, including a pre-formed adhesive mounting frame adapted to be located within said substrate cavity and to receive said semiconductor chip.
Claim 26
Dependent Claim
34 words
A CSFET device according to claim 16, wherein said hermetically sealing means includes a dielectric film bonded to said substrate, said dielectric film including an opening adapted to register with said FET gate region.
Claim 27
Dependent Claim
35 words
A CSFET device according to claim 19, including an insulating cover bonded to said dielectric film, said insulating cover having an opening in registered alignment with said dielectric film opening and said FET gate region.
Claim 28
Dependent Claim
124 words
A chemical sensitive field effect transitor (CSFET) device comprising: a semiconductor chip including a field effect transistor (FET) having a gate region and a plurality of conductive electrodes; a substrate having a surface and a cavity within said surface, said cavity adapted to receive said chip; a dielectric adhesive pad printed on said substrate surface to overlie a portion of said chip and thereby adhesively secure said chip in said cavity; a plurality of elongated conductive elements printed on said substrate surface and extending onto corresponding respective F ET conductive electrodes to form electrical connections therewith; a dielectric adhesive film printed on said substrate surface, conductive elements, and said chip to hermetically seal said surface, elements and chip except for said FET gate region.
Claim 29
Dependent Claim
124 words
A chemical sensitive field effect transitor (CSFET) device comprising: a semiconductor chip including a field effect transistor (FET) having a gate region and a plurality of conductive electrodes; a substrate having a surface and a cavity within said surface, said cavity adapted to receive said chip; a dielectric adhesive pad printed on said substrate surface to overlie a portion of said chip and thereby adhesively secure said chip in said cavity; a plurality of elongated conductive elements printed on said substrate surface and extending onto corresponding respective F ET conductive electrodes to form electrical connections therewith; a dielectric adhesive film printed on said substrate surface, conductive elements, and said chip to hermetically seal said surface, elements and chip except for said FET gate region.
Claim 30
Dependent Claim
18 words
A CSFET device according to claim 21, including a chemical sensitive material applied to said FET gate region.
Claim 31
Dependent Claim
134 words
A chemical sensitive field effect transistor (CSFET) device comprising: a semiconductor chip including a field effect transistor (FET) having a gate region and a plurality of conductive electrodes; a substrate having a surface and a cavity within said surface, said cavity adapted to receive said semiconductor chip; means for securing said semiconductor chip within said cavity, with said FET conductive electrodes substantially flush with said substrate surface; a plurality of elongated conductive elements printed on said substrate surface and extending over said FE T enabling respective conductive elements to be in direct electrical contacting engagement with respective FET conductive electrodes; a dielectric film member mounted to said substrate, said dielectric film having an opening adapted to said FET gate region, so that the semiconductor chip is hermetically sealed except for said FET gate region.
Claim 32
Dependent Claim
134 words
A chemical sensitive field effect transistor (CSFET) device comprising: a semiconductor chip including a field effect transistor (FET) having a gate region and a plurality of conductive electrodes; a substrate having a surface and a cavity within said surface, said cavity adapted to receive said semiconductor chip; means for securing said semiconductor chip within said cavity, with said FET conductive electrodes substantially flush with said substrate surface; a plurality of elongated conductive elements printed on said substrate surface and extending over said FE T enabling respective conductive elements to be in direct electrical contacting engagement with respective FET conductive electrodes; a dielectric film member mounted to said substrate, said dielectric film having an opening adapted to said FET gate region, so that the semiconductor chip is hermetically sealed except for said FET gate region.
Claim 33
Dependent Claim
34 words
A CSFET device according to claim 23, including a pre-formed adhesive mounting frame adapted to be inserted within said substrate cavity and to receive said semiconductor chip for mounting said chip to said substrate.
Claim 34
Dependent Claim
33 words
A CISFET device according to claim 24, including an insulating cover having an opening, said insulating cover mounted to said substrate with said cover opening in registered alignment with said FET gate region.
Claim 35
Dependent Claim
98 words
A chemical sensitive field effect transistor (CSFET) device comprising: a semiconductor chip including a field effect transistor (FET) having a gate region and a plurality of conductive electrodes; a substrate having a surface for mounting said semiconductor chip; a plurality of elongated conductive elements printed on said substrate surface; means for mounting said semiconductor chip on said substrate surface; a plurality of bonding wires respectively electrically connected intermediate said respective plurality of conductive elements and said respective plurality of FET conductive electrodes; and means for encapsulating said semiconductor chip except for said FET gate region by injection molding.
Claim 36
Dependent Claim
98 words
A chemical sensitive field effect transistor (CSFET) device comprising: a semiconductor chip including a field effect transistor (FET) having a gate region and a plurality of conductive electrodes; a substrate having a surface for mounting said semiconductor chip; a plurality of elongated conductive elements printed on said substrate surface; means for mounting said semiconductor chip on said substrate surface; a plurality of bonding wires respectively electrically connected intermediate said respective plurality of conductive elements and said respective plurality of FET conductive electrodes; and means for encapsulating said semiconductor chip except for said FET gate region by injection molding.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.