EP0112693A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of blowing fuses in an IC, for example for writing information into a fuse-type ROM
Assignee: Fujitsu Ltd
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Filing: 1983-12-15
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Granted: —
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Expires: 2003-12-15
Abstract
Abstract Fuses (1) are formed on an insulating film (2), are connected to conductor lines (6, 7) and are covered by a protective film (8). A ramp voltage is applied so as to blow the fuses without breaking the protective film.
Inventors
- 👤 Ryoichi Mukai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 19:54
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493; H10D; H10D84/00; H10D84/01; H10P; H10P95/00; H10P95/80
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
58 words
A method of blowing fuses in an integrated circuit provided with fuses which are formed on an insulating film on a substrate, are connected to conductor lines, and are covered by a protective film, comprising the step of selectively and electrically blowing said fuses without breaking said protective film by using a ramp voltage as an applied voltage.
Claim 2
Independent Claim
58 words
A method of blowing fuses in an integrated circuit provided with fuses which are formed on an insulating film on a substrate, are connected to conductor lines, and are covered by a protective film, comprising the step of selectively and electrically blowing said fuses without breaking said protective film by using a ramp voltage as an applied voltage.
Claim 3
Dependent Claim
29 words
A method according to claim 1, wherein said ramp voltage increases linearly in value at a rate of from 10 3 to 10 5 V/sec to a peak value.
Claim 4
Dependent Claim
19 words
A method according to claim 2, wherein said fuse is blown before said applied voltage attains the peak value.
Claim 5
Independent Claim
27 words
A method according to any preceding claim, wherein said fuses are made of a material selected from the group consisting of polycrystalline silicon, NiCr, TiW and PtSi.
Claim 6
Independent Claim
31 words
A method according to any preceding claim, wherein at least parts of respective said conductor lines are made of a metal selected from the group consisting of aluminium and aluminium-base alloy.
Claim 7
Independent Claim
32 words
A method according to any preceding claim, wherein each of said conductor lines comprises a doped polycrystalline silicon line and an aluminium piece connecting the fuse and the doped polycrystalline silicon line.
Claim 8
Dependent Claim
28 words
A method according to claim 1, wherein said protective film is made of a material selected from the group consisting of phosphosilicate glass, silicon dioxide, and silicon nitride.
Claim 9
Independent Claim
16 words
A method according to any preceding claim, employed for writing information into a fuse type ROM.
References Cited (Backward Citations)
GB1453858A
Cited
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