EP0112480B1
Expired / Lapsed
EP
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Amorphous silicium solar cell
Assignee: Siemens AG
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Filing: 1983-11-14
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Granted: 1988-10-26
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Expires: 2003-11-14
Abstract
No abstract record available.
Inventors
- 👤 Helmold Dipl.-Phys. Kausche
- 👤 Matthias Dipl.-Phys. Möller
- 👤 Franz Dr. Fischer
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 03:18
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F77/1692; H10F77/20; H10F77/206; H10F77/211; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
60 words
A solar cell comprising a semiconductor body which consists of amorphous silicon and which is applied to a substrate provided at least at its surface with a metal layer which serves as rear contact, characterised in that the metal layer (2) consists of an aluminium-silicon alloy with or without a titanium addition with a silicon portion of less than 2%.
Claim 2
Dependent Claim
60 words
A solar cell comprising a semiconductor body which consists of amorphous silicon and which is applied to a substrate provided at least at its surface with a metal layer which serves as rear contact, characterised in that the metal layer (2) consists of an aluminium-silicon alloy with or without a titanium addition with a silicon portion of less than 2%.
Claim 3
Dependent Claim
17 words
A solar cell as claimed in Claim 1, characterised in that the silicon portion amounts to 1.3%.
Claim 4
Dependent Claim
25 words
A solar cell as claimed in Claim 1, characterised in that the aluminium-silicon alloy contains with a portion of at least 1% silicon, 0.1-0.2% titanium.
Claim 5
Dependent Claim
40 words
A solar cell as claimed in one of Claims 1 to 3, characterised in that the layer thickness of the aluminium/silicon or aluminium/silicon/titanium layer (2) amounts to 500 to 1000 nm and the specific resistance to 3 gohm . cm.
References Cited (Backward Citations)
No citation records indexed.
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