EP0111651A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device comprising dielectric isolation regions
Assignee: Hitachi Ltd
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Filing: 1983-09-26
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Granted: —
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Expires: 2003-09-26
Abstract
Abstract Devices formed in a semiconductor integrated circuit device are electrically isolated by a pair of narrow and deep grooves (9), thick oxide films (14) formed on the surfaces of the grooves and a thick oxide film (15) formed on a surface of an area between the grooves.
Inventors
- 👤 Yoichi Tamaki
- 👤 Takeo Shiba
- 👤 Kazuhiko Sagara
- 👤 Masao Kawamura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 21:57
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0143; H10W10/041; H10W10/10; H10W10/17; H10W10/40
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
70 words
A semiconductor integrated circuit device having a number of devices to be isolated on a Si-substrate comprising: a pair of device isolation grooves (9) spaced from each other and extending to said Si-substrate (1); and a first layer of insulating material formed between said pair of device isolation grooves, said first layer including a thicker first silicon oxide film (15) than a second silicon oxide film (4) in device areas.
Claim 2
Dependent Claim
70 words
A semiconductor integrated circuit device having a number of devices to be isolated on a Si-substrate comprising: a pair of device isolation grooves (9) spaced from each other and extending to said Si-substrate (1); and a first layer of insulating material formed between said pair of device isolation grooves, said first layer including a thicker first silicon oxide film (15) than a second silicon oxide film (4) in device areas.
Claim 3
Dependent Claim
40 words
A semiconductor integrated circuit device according to Claim 1 further comprising: a second layer (14) of insulating material formed under said first thicken silicon oxide film (15); and a third silicon oxide film (12) formed under said insulating layer (14).
Claim 4
Dependent Claim
26 words
A semiconductor integrated circuit device according to Claim 2 wherein said grooves (9) each has a wide opening formed by said first silicon oxide film (15).
Claim 5
Dependent Claim
109 words
A semiconductor integrated circuit device according to Claim 2 wherein said insulating material is silicon and said grooves (9) are filled with a stacked structure comprising said third silicon oxide film (12) extended beneath into said grooves and intruding into said silicon substrate (1); a first silicon nitride film (13) deposited on said third silicon oxide film (12); said silicon layer (14) deposited and filling up a groove formed by said first nitride film (13); said first silicon oxide film (15) formed in the surface of said silicon layer (14) by thermal oxidation thereof and a second silicon nitride film (13) deposited on said first silicon oxide film (15).
Claim 6
Dependent Claim
18 words
A semiconductor integrated circuit device according to Claim 3 wherein said semiconductor integrated circuit device includes MOS FET's.
Claim 7
Dependent Claim
35 words
A semiconductor integrated circuit device according to Claim 3 wherein said semiconductor integrated circuit device includes bipolar devices and said pair of grooves extend through a collector buried layer (2) formed on said silicon substrate.
Claim 8
Dependent Claim
41 words
A semiconductor device comprising: a plurality of device isolation grooves (9) having dielectric material (14) deposited on at least surfaces thereof; and an area disposed between said device isolation grooves and having a top thereof coated with a thick insulating film.
Claim 9
Dependent Claim
41 words
A semiconductor device comprising: a plurality of device isolation grooves (9) having dielectric material (14) deposited on at least surfaces thereof; and an area disposed between said device isolation grooves and having a top thereof coated with a thick insulating film.
References Cited (Backward Citations)
No citation records indexed.
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