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EP0109706A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Method of manufacturing a semiconductor device by means of plasma etching

Assignee: Koninklijke Philips NV
•
Filing: 1983-11-10
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Granted: —
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Expires: 2003-11-10
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Abstract

Abstract A method of manufacturing a semiconductor device, in which a layer of silicon nitride (3) overlying a silicon oxide layer (4) present on a substrate (2) is etched by bringing it into contact with substantially only uncharged constituents of a plasma formed in a reactor to which a substantially oxygen-free gas or gas mixture is supplied. According to the invention, 0.1 to 25% by volume of a halogen different from fluorine or of a compound containing a halogen different from fluorine are added to this gas or gas mixture which contains fluorine or a fluorine compound. Thus, a high etching selectivity of silicon nitride with respect to silicon oxide is obtained, which moreover, does not vary during etching.

Inventors

  • 👤 Jan Dieleman
  • 👤 Franciscus Hubertus Marie Sanders

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-31 04:14
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 93 words
A method of manufacturing a semiconductor device, in which a layer of silicon nitride present on a substrate is etched by bringing the layer into contact with substantially only uncharged constituents of a plasma formed in a reactor to which a substantially oxygen-free gas or gas mixture is supplied which comprises fluorine or a fluorine compound, characterised in that 0.1 to 25% by volume of a halogen different from fluorine or of a gaseous compound containing a halogen different from fluorine are added to the gas or gas mixture supplied to the reactor.
Claim 2
Independent Claim 93 words
A method of manufacturing a semiconductor device, in which a layer of silicon nitride present on a substrate is etched by bringing the layer into contact with substantially only uncharged constituents of a plasma formed in a reactor to which a substantially oxygen-free gas or gas mixture is supplied which comprises fluorine or a fluorine compound, characterised in that 0.1 to 25% by volume of a halogen different from fluorine or of a gaseous compound containing a halogen different from fluorine are added to the gas or gas mixture supplied to the reactor.
Claim 3
Dependent Claim 27 words
A method as claimed in Claim 1, characterised in that bromine or a bromine compound is added to the gas or gas mixture supplied to the reactor.
Claim 4
Dependent Claim 17 words
A method as claimed in Claim 2, characterised in that the bromine compound is CF 3 Br.
Claim 5
Dependent Claim 41 words
A method as claimed in Claim 3, characterised in that the gas mixture supplied to the reactor consists of helium and 2 to 10% by volume of fluorine, to which 0.5 to 2% by volume of CF 3 Br are added.
Claim 6
Independent Claim 29 words
A method as claimed in any of Claims 1, 2 or 3, characterised in that the gas or gas mixture supplied to the reactor comprises N F 3 .

References Cited (Backward Citations)

GB2081159A Cited

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