EP0109692A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device for a MOSFET
Assignee: Nissan Motor Co Ltd
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Filing: 1983-11-22
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Granted: —
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Expires: 2003-11-22
Abstract
Abstract A semiconductor device for a lateral type MOSFET which can withstand a surge and prevent being broken. The device comprises a semiconductor wafer (21), diffused source (22) and drain (23) regions which the conductivity type thereof is different from that of the wafer, and a layer (24) of same conductivity type as the wafer formed along the bottom surface of the diffused drain region (23).
Inventors
- 👤 Koichi Murakami
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 10:22
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/105; H10D62/108; H10D62/17; H10D62/213; H10D62/221; H10D62/235; H10D62/299; H10D62/307; H10D62/351; H10D62/357; H10D62/364; H10D62/371
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
89 words
A semiconductor device for a lateral type MOSFET comprising; a semiconductor wafer of a first conductivity type, diffused source and drain regions formed on the side of a principal surface of said wafer, said diffused source and drain regions each being of a conductivity type opposite that of said wafer, and a first layer of said first conductivity type formed along the bottom surface of said diffused drain region to be stacked thereto and in contact therewith, said first layer having concentration higher than that of said semiconductor wafer.
Claim 2
Dependent Claim
89 words
A semiconductor device for a lateral type MOSFET comprising; a semiconductor wafer of a first conductivity type, diffused source and drain regions formed on the side of a principal surface of said wafer, said diffused source and drain regions each being of a conductivity type opposite that of said wafer, and a first layer of said first conductivity type formed along the bottom surface of said diffused drain region to be stacked thereto and in contact therewith, said first layer having concentration higher than that of said semiconductor wafer.
Claim 3
Dependent Claim
24 words
A semiconductor device according to claim 1, which further comprises a wafer contact region of said first conductivity type formed in said source region.
Claim 4
Dependent Claim
21 words
A semiconductor device according to claim 2, wherein said first layer has concentration lower than that of said wafer contact region.
Claim 5
Dependent Claim
51 words
A semiconductor device according to claim 1, wherein said semiconductor wafer further includes a second layer of said first conductivity type formed along the bottom surface of said diffused source region to be stacked thereto and in contact therewith, said second layer having concentration higher than that of said semiconductor wafer.
Claim 6
Dependent Claim
39 words
A semiconductor device according to claim 4, wherein said second layer of said first conductivity type is provided with an end portion elongated to be stacked to the side surface of said diffused source region and in contact therewith.
Claim 7
Dependent Claim
32 words
A semiconductor device according to claim 5, wherein said end portion of said second layer is exposed to the principal surface of said semioconductor wafer on which a gate electrode is provided.
Claim 8
Dependent Claim
93 words
A semiconductor device for a lateral type MOSFET comprising; a semiconductor wafer of a first conductivity type, diffused source and drain regions formed on the side of a principal surface of said wafer, said diffused source and drain regions each being of a second conductivity type opposite that of said wafer, and a first layer of said first conductivity type formed along the bottom surface of said diffused source region in a manner to be stacked thereto and in contact therewith, said first layer having concentration higher than that of said semiconductor wafer.
Claim 9
Dependent Claim
93 words
A semiconductor device for a lateral type MOSFET comprising; a semiconductor wafer of a first conductivity type, diffused source and drain regions formed on the side of a principal surface of said wafer, said diffused source and drain regions each being of a second conductivity type opposite that of said wafer, and a first layer of said first conductivity type formed along the bottom surface of said diffused source region in a manner to be stacked thereto and in contact therewith, said first layer having concentration higher than that of said semiconductor wafer.
Claim 10
Dependent Claim
24 words
A semiconductor device according to claim 7, which further comprises a wafer contact region of said first conductivity type formed in said source region.
Claim 11
Dependent Claim
21 words
A semiconductor device according to claim 8, wherein said first layer has concentration lower than that of said wafer contact region.
Claim 12
Dependent Claim
41 words
A semiconductor device according to claim 7, wherein said first layer of said first conductivity type is provided with an end portion elongated so as to be stacked to the side surface of said diffused source region and in contact therewith.
Claim 13
Dependent Claim
32 words
A semiconductor device according to claim 10, wherein said end portion of said first layer is exposed to the principal surface of said semioconductor wafer, on which a gate electrode is provided.
References Cited (Backward Citations)
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