EP0109331A1
Expired / Lapsed
EP
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Asymmetrical thyristor for high inverse biasing
Assignee: Le Silicium Semiconducteur Ssc
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Filing: 1983-10-28
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Granted: —
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Expires: 2003-10-28
Abstract
Abstract 1. Asymmetric thyristor with high reverse voltage strength, comprising, from its upper face to its lower face, a cathode N1 layer, a P1 gate layer, an asymmetric N2 N2**+ base layer, the higher doped N2**+ zone being located on the side of the lower face, and a P2 anode layer, characterized in that it further comprises an additional P2**- layer less doped than the N2**+ layer between the higher doped N2**+ zone and the P2 anode layer.
Inventors
- 👤 Maurizio Felici
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 18:37
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/141; H10D62/142; H10D18/00; H10D18/241
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References Cited (Backward Citations)
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