EP0106638A1
Expired / Lapsed
EP
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Method and apparatus for growing material in a glow discharge
Assignee: National Research Development Corp UK
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Filing: 1983-10-06
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Granted: —
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Expires: 2003-10-06
Abstract
Abstract @ A method of growing a combined layer of at least a first and a second material in a glow discharge chamber (1). A target cathode (18) formed of the first material e.g. Si, Ge, W is arranged in the chamber (1) and spaced from a substrate (19) to be coated. Argon gas and a gas of the second material, e.g. a hydrocarbon, are admitted into the chamber and a glow discharge established. Hydrocarbon ions from the glow discharge plasma strike and deposit on the cathode target (18). Argon ions sputter off atoms of both C and bulk target material e.g. Si, Ge, or W, which deposit onto the substrate (19) and gradually build up a combined layer (24) of e.g. Si x C 1-x , Ge x C 1-x , W x C 1-x .
Inventors
- 👤 Geoffrey William Green
- 👤 Alan Harold Lettington
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 15:10
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; C23C14/02; C23C14/027; G; G02; G02B; G02B1/00; G02B1/10; G02B1/12
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
133 words
A method of growing a combined layer of at least a first and a second material comprising the steps of arranging a first material forming a target material on a cathode in a glow discharge chamber, arranging a substrate to be coated on a holder a spaced distance from the target, maintaining the substrate temperature at a required level, admitting elements of the second material and a sputtering material into the chamber, and establishing a glow discharge within the chamber, the glow discharge plasma containing ions of the second material for adhering to the target material and ions of the sputtering material that sputter off both the first material and second material onto the substrate where a layer of the first and second material gradually builds up in thickness to the required value.
Claim 2
Independent Claim
133 words
A method of growing a combined layer of at least a first and a second material comprising the steps of arranging a first material forming a target material on a cathode in a glow discharge chamber, arranging a substrate to be coated on a holder a spaced distance from the target, maintaining the substrate temperature at a required level, admitting elements of the second material and a sputtering material into the chamber, and establishing a glow discharge within the chamber, the glow discharge plasma containing ions of the second material for adhering to the target material and ions of the sputtering material that sputter off both the first material and second material onto the substrate where a layer of the first and second material gradually builds up in thickness to the required value.
Claim 3
Dependent Claim
11 words
The method of claim 1 wherein the sputtering material is Ar.
Claim 4
Dependent Claim
19 words
The method of claim 1 wherein the first material forming a target material is bulk Ge, Si, or W.
Claim 5
Dependent Claim
13 words
The method of claim 1 wherein the second material is a hydrocarbon gas.
Claim 6
Dependent Claim
17 words
The method of claim 1 wherein the substrate is maintained at a temperature above 400°C during growth.
Claim 7
Dependent Claim
14 words
The method of claim 1 wherein an electrical bias is applied to the substrate.
Claim 8
Dependent Claim
25 words
The method of claim 1 and comprising the additional step of introducing a gas of the first material into the chamber and ionising said gas.
Claim 9
Dependent Claim
18 words
The method of claim 1 wherein the substrate and target are rotated relative to one another during growth.
Claim 10
Dependent Claim
18 words
The method of claim 1 and further comrpsing the step of removing the substrate from the grown layer.
Claim 11
Dependent Claim
25 words
The method of claim 1 wherein the proportions of Ar and hydrocarbon gas are varied to vary the value of x in the growing layer.
Claim 12
Dependent Claim
29 words
The method of claim 1 wherein the substrate material is infra red transparent ZnS or ZnSe and the grown layer is infra red transparent Si x C 1-x .
Claim 13
Dependent Claim
27 words
The method of claim 1 wherein the substrate material is infra red transparent Ge and the grown layer is infra red transparent Ge x C 1-x .
References Cited (Backward Citations)
US4127659A
Cited
GB1560110A
Cited
GB2067304A
Cited
GB2069008A
Cited
GB2081695A
Cited
GB2082562A
Cited
GB2083841A
Cited
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