EP0106637A1
Expired / Lapsed
EP
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Infra red transparent optical components
Assignee: Qinetiq Ltd
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Filing: 1983-10-06
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Granted: —
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Expires: 2003-10-06
Abstract
Abstract A method of coating a substrate in a glow discharge chamber uses a source of hydrocarbon and another element. For example butane and germane are used to deposit a coating of Ge x C 1-x where 0 < x < 1 onto a germanium substrate. The substrate temperature is maintained above 400°C typically 530°C during growth to prevent inclusion of H 2 in the coating. The presence of Ge in the coating allows thick, strain free, layers to be grown. Alternatively butane and silane may be used to deposit Si x C 1-x . Varying the proportions of the hydrocarbon and germane or silane allows a variation in the value of x.
Inventors
- 👤 Geoffrey William Green
- 👤 Alan Harold Lettington
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 02:43
CPC Classifications
G; G02; G02B; G02B1/00; G02B1/10; G02B1/12; C; C23; C23C; C23C16/00; C23C16/02; C23C16/0272; C23C16/029; C23C16/22; C23C16/30; C23C16/32; C23C16/325
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
57 words
A method of depositing coatings comprising the steps of providing a vacuuum chamber containing a cathode structure, arranging a substrate to be coated on the cathode, providing in the chamber a glow discharge plasma containing carbon and another element to be deposited as a coating and maintaining the substrate temperature above 400°C during growth of the coating.
Claim 2
Independent Claim
57 words
A method of depositing coatings comprising the steps of providing a vacuuum chamber containing a cathode structure, arranging a substrate to be coated on the cathode, providing in the chamber a glow discharge plasma containing carbon and another element to be deposited as a coating and maintaining the substrate temperature above 400°C during growth of the coating.
Claim 3
Dependent Claim
18 words
The method of claim 1 wherein the substrate temperature is above 400 C during growth of the coating.
Claim 4
Dependent Claim
20 words
The method of claim 1 wherein a hydrocarbon gas and germane are admitted to the chamber to form the plasma.
Claim 5
Dependent Claim
19 words
The method claim 1 wherein a hydrocarbon gas and silane are admitted to the chamber to form the plasma.
Claim 6
Dependent Claim
22 words
The method of claim 1 wherein at least one of the elements forming the coating is provided by a molecular beam oven.
Claim 7
Dependent Claim
22 words
The method of claim 1 wherein at least one of the elements forming the coating is provided by an ion beam source.
Claim 8
Dependent Claim
15 words
. The method of claim 1 wherein the substrate is a piece of germanium material.
Claim 9
Dependent Claim
22 words
The method of claim 7 wherein the coating is of the material Ge x C 1-x where 0 < x < 1.
Claim 10
Dependent Claim
14 words
The method of claim 1 wherein the substrate is a piece of silicon material.
Claim 11
Dependent Claim
22 words
The method of claim 9 wherein the coating is of the material Si x C 1-x where 0 < x < 1.
Claim 12
Dependent Claim
31 words
The method of claim 1 wherein the proportions of the hydrocarbon and the other element are varied to give a value of x that varies across the thickness of the coating.
Claim 13
Dependent Claim
32 words
An infra red transparent optical component comprising a piece of germanium material coated on at least one surface with a layer, less than 10 µm thick, of Ge x C 1-x .
Claim 14
Dependent Claim
32 words
An infra red transparent optical component comprising a piece of germanium material coated on at least one surface with a layer, less than 10 µm thick, of Ge x C 1-x .
Claim 15
Dependent Claim
34 words
An infra red transparent optical component comprising a piece of ZnS or ZnSe material coated on at least one surface with a layer, less than 10 um thick, of Si x C 1-x .
Claim 16
Dependent Claim
34 words
An infra red transparent optical component comprising a piece of ZnS or ZnSe material coated on at least one surface with a layer, less than 10 um thick, of Si x C 1-x .
References Cited (Backward Citations)
US4127659A
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GB1560110A
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GB2047877A
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GB2067304A
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GB2083841A
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