EP0104916A2
Expired / Lapsed
EP
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Depositing a film onto a substrate including electron-beam evaporation
Assignee: National Research Development Corp UK
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Filing: 1983-09-23
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Granted: —
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Expires: 2003-09-23
Abstract
Abstract A single-crystal ingot I of boron-doped silicon is electron-beam heated in ionised hydrogen. Using an electrode E to apply an electric field from the ingot I towards a heated substrate S, which is r.f. biassed, an amorphous boron-doped silicon film deposits on the substrate S. Intrinsic and n-type material can also be produced.
Inventors
- 👤 Joseph Chapman Anderson
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 03:16
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; C; C23; C23C; C23C14/00; C23C14/0021; C23C14/22; C23C14/24; C23C14/32; H10P14/22; H10P14/29; H10P14/2901; H10P14/2922; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
127 words
A process for depositing a film onto a substrate, comprising evaporating under reduced pressure one or more elements which are to be constituents of the film by an electron beam directed onto the element(s), and heating the substrate, characterised in that the process is performed in an atmosphere containing hydrogen which is ionised by collecting, by applying an electric field, electrons emitted thermally from the element(s), and in that the element(s) is (are all) chosen such as to form compound(s) with hydrogen in the ionised gas, such that on reaching the heated substrate a film of somewhat hydrogenated element(s) is formed, the crystallographic structure of the film being substantially free of electrically active defects compared with a non- hydrogenated evaporated film (hydrogen taking up any 'defect' bonds)..
Claim 2
Dependent Claim
127 words
A process for depositing a film onto a substrate, comprising evaporating under reduced pressure one or more elements which are to be constituents of the film by an electron beam directed onto the element(s), and heating the substrate, characterised in that the process is performed in an atmosphere containing hydrogen which is ionised by collecting, by applying an electric field, electrons emitted thermally from the element(s), and in that the element(s) is (are all) chosen such as to form compound(s) with hydrogen in the ionised gas, such that on reaching the heated substrate a film of somewhat hydrogenated element(s) is formed, the crystallographic structure of the film being substantially free of electrically active defects compared with a non- hydrogenated evaporated film (hydrogen taking up any 'defect' bonds)..
Claim 3
Dependent Claim
18 words
A process according to Claim 1, wherein the element (or one of the elements) is silicon or germanium.
Claim 4
Dependent Claim
21 words
A process according to Claim 2, wherein more than one element is present, and the second element is boron or phosphorus.
Claim 5
Dependent Claim
18 words
A process according to Claim 1, 2 or 3, wherein there is a single supply of the element(s).
Claim 6
Dependent Claim
17 words
A process according to Claim 4, wherein the supply is in the form of a single crystal.
Claim 7
Dependent Claim
26 words
A process according to any preceding claim, wherein the atmosphere contains, additionally, a gas capable of acting as a dopant for a semiconductor (for example nitrogen).
Claim 8
Dependent Claim
78 words
A process for depositing a film onto a substrate, comprising evaporating under reduced pressure a supply of the film-constituting material by an electron beam directed onto the supply, providing an atmosphere of an ionised gas which reacts with the evaporated material, and heating the substrate, characterised in that the material comprises a plurality of elements, all reactive with the gas, whereby the resulting compounds on contacting the heated substrate decompose to leave a film comprising all the elements.
Claim 9
Dependent Claim
78 words
A process for depositing a film onto a substrate, comprising evaporating under reduced pressure a supply of the film-constituting material by an electron beam directed onto the supply, providing an atmosphere of an ionised gas which reacts with the evaporated material, and heating the substrate, characterised in that the material comprises a plurality of elements, all reactive with the gas, whereby the resulting compounds on contacting the heated substrate decompose to leave a film comprising all the elements.
Claim 10
Dependent Claim
11 words
A process according to Claim 7, wherein the atmosphere contains hydrogen.
Claim 11
Dependent Claim
18 words
A process according to Claim 8, wherein the film-constituting material comprises silicon or germanium, which are optionally doped.
Claim 12
Dependent Claim
13 words
A process according to Claim 9, where the supply is a single crystal.
Claim 13
Dependent Claim
22 words
A process according to Claim 9 or 10, wherein the atmosphere contains a dopant for the silicon or germanium (for example nitrogen).
Claim 14
Dependent Claim
59 words
A process for depositing a film of semiconductor onto a substrate, comprising evaporating a supply of the semiconductor under reduced pressure in an ionised gas by an electron beam directed onto the supply, and heating the substrate, such that, on contacting the substrate, the evaporated element deposits as a film, characterised in that the supply is a single crystal.
Claim 15
Dependent Claim
59 words
A process for depositing a film of semiconductor onto a substrate, comprising evaporating a supply of the semiconductor under reduced pressure in an ionised gas by an electron beam directed onto the supply, and heating the substrate, such that, on contacting the substrate, the evaporated element deposits as a film, characterised in that the supply is a single crystal.
Claim 16
Dependent Claim
16 words
A process according to Claim 12, wherein the supply, and hence the deposited film, are doped.
Claim 17
Dependent Claim
27 words
A process according to Claim 12 or 13, wherein the ionised gas is hydrogen, optionally containing a gas capable of acting as a dopant (for example nitrogen).
Claim 18
Dependent Claim
42 words
A process for depositing a doped film of semiconductor onto a substrate, comprising evaporating a supply of the semiconductor under reduced pressure in an ionised gas characterised in that the ionised gas contains hydrogen and a gas capable of acting as.a dopant.
Claim 19
Dependent Claim
42 words
A process for depositing a doped film of semiconductor onto a substrate, comprising evaporating a supply of the semiconductor under reduced pressure in an ionised gas characterised in that the ionised gas contains hydrogen and a gas capable of acting as.a dopant.
Claim 20
Dependent Claim
13 words
A process according to Claim 15, wherein the supply is a single crystal.
Claim 21
Dependent Claim
19 words
A process according to Claim 15 or 16, wherein the gas capable of acting as a dopant is nitrogen.
Claim 22
Dependent Claim
17 words
A process according to any of Claims 12 to 17, wherein the semiconductor is an elemental semiconductor.
Claim 23
Dependent Claim
13 words
A process according to Claim 18, where the semiconductor is silicon or germanium.
Claim 24
Dependent Claim
13 words
A process according to any preceding claim, wherein the substrate is electrically biassed.
Claim 25
Dependent Claim
25 words
A process according to Claim 20, wherein the substrate is biassed by a radio frequency voltage to a net negative potential with respect to earth.
References Cited (Backward Citations)
No citation records indexed.
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