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EP0104559A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Pulling method of single crystals

Assignee: Sumitomo Electric Industries Ltd
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Filing: 1983-09-16
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Granted: —
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Expires: 2003-09-16
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Abstract

Abstract Pulling method of single crystals (6) by the Czochralski technique using a single-crystal pulling apparatus having a furnace (2) consisting of separately controlled heaters (7, 8), wherein the temperature at the seed holder (11) is measured and power is supplied to the heaters (7, 8) so that the temperature difference (ΔT) between the crucible (1) and the seed holder (11) follows a predetermined pattern as a function of the pulled-up length (Δx).

Inventors

  • 👤 Toshihiro Kotani

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-08 16:05
CPC Classifications
C; C30; C30B; C30B27/00; C30B27/02; C30B15/00; C30B15/14; C30B15/20; C30B15/22; C30B15/36

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 74 words
Pulling method of single crystals (6) by the Czochralski technique using a single-crystal pulling apparatus having a furnace (2) consisting of separately controlled heaters (7, 8), wherein the temperature at the seed holder (11) is measured and power is supplied to the heaters (7, 8) so that the temperature difference (ΔT) between the crucibel (1) and the seed holder (11) follows a predetermined pattern as a function of the pulled-up length ( A x)
Claim 2
Dependent Claim 74 words
Pulling method of single crystals (6) by the Czochralski technique using a single-crystal pulling apparatus having a furnace (2) consisting of separately controlled heaters (7, 8), wherein the temperature at the seed holder (11) is measured and power is supplied to the heaters (7, 8) so that the temperature difference (ΔT) between the crucibel (1) and the seed holder (11) follows a predetermined pattern as a function of the pulled-up length ( A x)
Claim 3
Dependent Claim 18 words
Pulling method of single crystals as set forth in claim, 1, wherein (AT) is in proportion to (Ax)
Claim 4
Dependent Claim 23 words
Pulling method of single crystals (6) as set forth in claim 2, wherein (ΔT/Δx) is within the range of 30 to 60°C/cm -
Claim 5
Dependent Claim 28 words
Pulling method of single crystals (6) as set forth in claim 3, wherein the (ΔT/Δx) at the first stage is larger than the (ΔT/Δx) at the successive stage
Claim 6
Dependent Claim 34 words
Pulling method of single crystals (6) as set forth in claim 4, wherein the (AT/Ax) at the first stage is about 50 0 C/cm, and the (ΔT/Δx) at the successive stage is about 40°C/cm

References Cited (Backward Citations)

FR1409118A Cited
FR1435250A Cited
US3795488A Cited

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