EP0103470A1
Expired / Lapsed
EP
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Titanium disulfide thin film and process for fabricating the same
Assignee: Hitachi Ltd
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Filing: 1983-09-09
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Granted: —
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Expires: 2003-09-09
Abstract
Abstract @ The present invention relates to a titanium disulfide film fabricated on a substrate, where crystallites of titanium disulfide is oriented at an angle of their c-axis to the substrate surface of not more than 45°, and to a process for fabricating the film, where the film is prepared by chemical vapor deposition from TiCf 4 and H 2 S as source gases under an inner pressure of reaction tube of 30 kPa or less.
Inventors
- 👤 Keiichi Kanehori
- 👤 Katsuki Miyauchi
- 👤 Tetsuichi Kudo
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 13:22
CPC Classifications
H; H01; H01M; H01M6/00; H01M6/14; H01M6/18; H01M6/185; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/305; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/46; C30B29/60; C30B29/605; H01M4/00; H01M4/02; H01M4/13; H01M4/136; H01M4/36; H01M4/58; H01M4/581; H01M4/5815; H01M10/00; H01M10/05; H01M10/052; H01M10/056; H01M10/0561; H01M10/0562; H01M4/139; H01M4/1397; Y; Y02; Y02E; Y02E60/00; Y02E60/10
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
31 words
A titanium disulfide film fabricated on a substrate, which comprises crystallites of titanium disulfide being oriented at an angle of its c-axis to the substrate surface of not more than 45°.
Claim 2
Dependent Claim
31 words
A titanium disulfide film fabricated on a substrate, which comprises crystallites of titanium disulfide being oriented at an angle of its c-axis to the substrate surface of not more than 45°.
Claim 3
Dependent Claim
21 words
A titanium disulfide film according to Claim 1, wherein the titanium disulfide film has a film density of 70% or higher.
Claim 4
Dependent Claim
53 words
A process for fabricating a titanium disulfide film on a substrate, which comprises forming a titanium disulfide film on a substrate from titanium tetrachloride and hydrogen sulfide as source gases by chemical vapor deposition under an inner pressure of reaction system of 30 kPa or less and at a substrate temperature of 350°-650°C.
Claim 5
Dependent Claim
53 words
A process for fabricating a titanium disulfide film on a substrate, which comprises forming a titanium disulfide film on a substrate from titanium tetrachloride and hydrogen sulfide as source gases by chemical vapor deposition under an inner pressure of reaction system of 30 kPa or less and at a substrate temperature of 350°-650°C.
Claim 6
Dependent Claim
26 words
A process according to Claim 3, wherein a concentration ratio of the hydrogen sulfide to the titanium tetrachloride is in a range of 3 - 20.
Claim 7
Dependent Claim
26 words
A process according to Claim 3 or 4, wherein He or Ar is used as a carrier gas for the titanium tetrachloride and the hydrogen sulfide.
Claim 8
Dependent Claim
16 words
A process according to Claim 3, wherein the substrate temperature is in a range of 350°-600°C.
References Cited (Backward Citations)
US3808035A
Cited
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US4137297A
Cited
US4203861A
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EP0028691A1
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