EP0103461A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Plasma deposition method and apparatus
Assignee: NTT Inc
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Filing: 1983-09-07
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Granted: —
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Expires: 2003-09-07
Abstract
Abstract A plasma deposition apparatus comprising a plasma formation chamber (1) into which a gas is introduced to produce plasma, a specimen chamber (2) in which a specimen table (8) is disposed for placing thereon a specimen substrate (7) on which a thin film is to be formed, a plasma extraction window (5) interposed between the plasma formation chamber (1) and the specimen chamber (2), a target (16, 41) which is made of a sputtering material and is interposed between the plasma extraction window (5) and the specimen table (8), a first means (19) for extracting ions for sputtering the target (16,41) from a plasma stream (6) extracted from the plasma formation chamber (1) to impinge against the target (16, 41), and a second means (10) for extracting the plasma stream (6) through the plasma extraction window (5) into the specimen chamber (2) and for transporting the sputtered and ionized atoms to the specimen substrate (7) placed on the specimen table (8). A high quality thin film of various metals and metal compounds can be formed at a low temperature and a thin film is formed, while characteristics or properties of the thin film to be formed is controlled.
Inventors
- 👤 Seitaro Matsuo
- 👤 Toshiro Ono
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 14:11
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32192; C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/35; C23C14/354; C23C14/357; C23C14/46; H01J37/34
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
98 words
A plasma deposition method comprising the steps of: (a) introducing a gas into a vacuum vessel (1) to produce plasma; (b) sputtering a target (16, 41) made of a sputtering material by ions in a plasma stream (6) of said plasma; (c) ionizing atoms which are sputtered from said target (16, 41) into said plasma stream (6); and (d) transporting the ionized atoms together with said plasma stream (6) to a specimen substrate (7) so that said ionized atoms reach said specimen substrate (7) to form a thin film including said sputtering material on said specimen substrate (7).
Claim 2
Dependent Claim
98 words
A plasma deposition method comprising the steps of: (a) introducing a gas into a vacuum vessel (1) to produce plasma; (b) sputtering a target (16, 41) made of a sputtering material by ions in a plasma stream (6) of said plasma; (c) ionizing atoms which are sputtered from said target (16, 41) into said plasma stream (6); and (d) transporting the ionized atoms together with said plasma stream (6) to a specimen substrate (7) so that said ionized atoms reach said specimen substrate (7) to form a thin film including said sputtering material on said specimen substrate (7).
Claim 3
Dependent Claim
168 words
A plasma deposition apparatus comprising: (a) a plasma formation chamber (I) into which a gas is introduced to produce plasma; (b) a specimen chamber (2) in which a specimen table (8) is disposed for placing thereon a specimen substrate (7) on which a thin film is to be formed; (c) a plasma extraction window (5) interposed between said plasma formation chamber (1) and said specimen chamber (2); (d) a target (16, 41) which is made of a sputtering material and is interposed between said plasma extraction window (5) and said specimen table (8); (e) a first means (19) for extracting ions for sputtering said target (16, 41) from a plasma stream (6) extracted from said plasma formation chamber (1) to impinge against said target (16, 41); and (f) a second means (10) for extracting said plasma stream (6) through said plasma extraction window (5) into said specimen chamber (2) and for transporting the sputtered and ionized atoms to said specimen substrate (7) placed on said specimen table (8).
Claim 4
Dependent Claim
168 words
A plasma deposition apparatus comprising: (a) a plasma formation chamber (I) into which a gas is introduced to produce plasma; (b) a specimen chamber (2) in which a specimen table (8) is disposed for placing thereon a specimen substrate (7) on which a thin film is to be formed; (c) a plasma extraction window (5) interposed between said plasma formation chamber (1) and said specimen chamber (2); (d) a target (16, 41) which is made of a sputtering material and is interposed between said plasma extraction window (5) and said specimen table (8); (e) a first means (19) for extracting ions for sputtering said target (16, 41) from a plasma stream (6) extracted from said plasma formation chamber (1) to impinge against said target (16, 41); and (f) a second means (10) for extracting said plasma stream (6) through said plasma extraction window (5) into said specimen chamber (2) and for transporting the sputtered and ionized atoms to said specimen substrate (7) placed on said specimen table (8).
Claim 5
Dependent Claim
37 words
A plasma deposition apparatus as claimed in claim 2, wherein said target (16, 41) is disposed in the vicinity of said said plasma extraction window (5) and adjacent to or in contact with said plasma stream (6).
Claim 6
Dependent Claim
31 words
A plasma deposition apparatus as claimed in claim 2, wherein the surface of said target (16) which faces said plasma stream (6) is disposed in parallel with said plasma stream (6).
Claim 7
Dependent Claim
30 words
A plasma deposition apparatus as claimed in claim 2, wherein said.target (41) is in the form of a cylinder, and is so disposed as to surround said plasma stream (6).
Claim 8
Dependent Claim
36 words
A plasma deposition apparatus as claimed in claim 5, wherein the surface of said cylindrical target (41) which is to be sputtered is so disposed as to intersect with a part of said plasma stream (6).
Claim 9
Dependent Claim
36 words
A plasma deposition apparatus as claimed in any one of claims 2 through 5, wherein said plasma formation chamber (1) is structured in a manner that said plasma is produced by microwave electron cyclotron resonance discharge.
Claim 10
Dependent Claim
52 words
A plasma deposition apparatus as claimed in any one of claims 2 through 7, wherein said second means (10) comprises one or more magnetic coils (10) having a diverging magnetic field with an intensity of magnetic field having a reducing gradient from said plasma formation chamber (1) toward said specimen chamber (2).
Claim 11
Dependent Claim
38 words
A plasma deposition apparatus as claimed in claim 2 or 3, wherein said first means (19) has a sputtering power supply (19) connected in such a way that a negative voltage is applied to said target (16, 41).
Claim 12
Dependent Claim
42 words
A plasma deposition apparatus as claimed in any one of claims 2 through 9, wherein the surface of said target (16, 41) which is opposite to the surface which faces said plasma stream (6) is surrounded with a shield electrode (18, 43).
Claim 13
Dependent Claim
21 words
A plasma deposition apparatus as claimed in claim 10, further comprising means (44, 45, 46) for cooling said shield electrode (43).
Claim 14
Dependent Claim
41 words
A plasma deposition apparatus as claimed in claim 5 or 6, wherein said cylindrical target (41) comprises a plurality of cylindrical segments (41A, 41B) which are made of different sputtering materials and are disposed in a coaxial relationship with each other.
Claim 15
Dependent Claim
58 words
A plasma deposition apparatus as claimed in claim 5, 6 or 12, wherein said cylindrical target comprises a plurality of cylindrical segments (62, 63) which are made of different sputtering materials and have substantially the same diameter, and said plurality of cylindrical segments (62, 63) are stacked one upon another in the direction of said plasma stream (6).
Claim 16
Dependent Claim
57 words
A plasma deposition apparatus as claimed in claim 2, 5, 6 or 13, wherein said target (41) comprises a plurality of target segments (74, 75; 76, 77) , which are electrically connected independently to separate sputtering power supplies (19A, 19B) so that the sputtering of each segment (74, 75; 76, 77) is controlled independently of each other.
Claim 17
Dependent Claim
28 words
A plasma deposition apparatus as claimed in any one of claims 2 through 14, wherein said specimen table (8) is electrically insulated from said plasma formation chamber (1).
Claim 18
Dependent Claim
29 words
A plasma deposition apparatus as claimed in any one of claims 2 through 15, wherein a first gas introduction system (12) is coupled to said plasma formation chamber (1).
Claim 19
Dependent Claim
23 words
A plasma deposition apparatus as claimed in claim 16, wherein a second gas introduction system (13) is coupled to said specimen chamber (2).
References Cited (Backward Citations)
No citation records indexed.
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