EP0102075A2
Expired / Lapsed
EP
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Semiconductor device with a multilayer structure
Assignee: Hitachi Ltd
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Filing: 1983-08-26
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Granted: —
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Expires: 2003-08-26
Abstract
Abstract A semiconductor device has a substrate (1, 2) provided with a mesa region (11), wherein an insulation film (6) is provided in regions other than the mesa region (11), and a polycrystalline silicon layer (10-1) and a metal silicide layer (10-2) are formed over said insulation film (6). this multilayer structure consisting of a take-out portion for at least one of the emitter (4-1), base (4-3), and collector (4-2) members of a bipolar transistor provided in the mesa region (11).
Inventors
- 👤 Thoru Nakamura
- 👤 Shojiro Sugaki
- 👤 Masahiko Ogirima
- 👤 Kazuo Nakazato
- 👤 Takao Miyazaki
- 👤 Naoki Yamamoto
- 👤 Minoru Nagata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 12:38
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/30; H10D48/32; H10D48/34; H10D48/345; H10W; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
136 words
A semiconductor device characterised by a semiconductor substrate (1, 2) with a mesa region of a first conductivity type; an insulation film (6) provided over the portions other than the mesa region of said substrate (1, 2); a first region (18) of a semiconductor layer of a second conductivity type which is provided over said insulation film (6) in contact with said mesa region; a second region (19, 23) of metal silicide provided over said first region (18); a third region (4) of said second conductivity type in contact with said first region (18) and provided on the mesa region of said substrate; and a fourth region of an insulation film (8) provided over a region in contact with said first (18) and/or second (19, 23) regions and with the third region (4) of said substrate.
Claim 2
Dependent Claim
136 words
A semiconductor device characterised by a semiconductor substrate (1, 2) with a mesa region of a first conductivity type; an insulation film (6) provided over the portions other than the mesa region of said substrate (1, 2); a first region (18) of a semiconductor layer of a second conductivity type which is provided over said insulation film (6) in contact with said mesa region; a second region (19, 23) of metal silicide provided over said first region (18); a third region (4) of said second conductivity type in contact with said first region (18) and provided on the mesa region of said substrate; and a fourth region of an insulation film (8) provided over a region in contact with said first (18) and/or second (19, 23) regions and with the third region (4) of said substrate.
Claim 3
Dependent Claim
38 words
A semiconductor device according to claim 1, wherein said second metal.silicide region (19, 23) is of a compound formed from said first region (18) and a metal film and formed into one body with said first region (18).
Claim 4
Dependent Claim
32 words
. A semiconductor device according to claim 2, wherein the surface regions of the mesa region of said substrate have a fifth region of a semiconductor layer of said second conductivity type.
Claim 5
Dependent Claim
33 words
A semiconductor device according to claim 3, wherein the fifth region provided over the surface regions of the mesa region of said substrate has a sixth region of said first conductivity type thereon.
Claim 6
Dependent Claim
115 words
A semiconductor device comprising: a semiconductor body (1, 2) of a single crystal having a first convex portion (11) of a first conductivity type; an insulation film (6) having a first opening formed on a surface of said body (1, 2) other than said first convex portion (11); a first polycrystalline semiconductor layer (18) of a second conductivity type opposite to said first conductivity type formed on said first convex portion and on said insulation layer (6); a first metal silicide layer formed on said first polycrystalline semiconductor layer; and a first region (4) of said second conductivity type formed in said first convex portion (11) in contact with said first polycrystalline semiconductor layer (18).
Claim 7
Dependent Claim
115 words
A semiconductor device comprising: a semiconductor body (1, 2) of a single crystal having a first convex portion (11) of a first conductivity type; an insulation film (6) having a first opening formed on a surface of said body (1, 2) other than said first convex portion (11); a first polycrystalline semiconductor layer (18) of a second conductivity type opposite to said first conductivity type formed on said first convex portion and on said insulation layer (6); a first metal silicide layer formed on said first polycrystalline semiconductor layer; and a first region (4) of said second conductivity type formed in said first convex portion (11) in contact with said first polycrystalline semiconductor layer (18).
Claim 8
Dependent Claim
80 words
A semiconductor device according to claim 5, further comprising a second region (5) of said first conductivity type formed in said first region and a third region (3, 11) of said first conductivity type formed in said body under said first convex portion (11), said third region (3, 11) serving as a collector region, said first region (4- 3) serving as a base region and said second region (5) serving as an emitter region to form a bipolar transistor (II).
Claim 9
Dependent Claim
42 words
A semiconductor device according to claim 6, further comprising a collector electrode (9) formed on said third region (3, 11), a base electrode (9) formed on said polycrystalline semiconductor layer (18), and an emitter electrode (9) formed on said second region (5).
Claim 10
Dependent Claim
38 words
A semiconductor device according to claim 7, wherein. said insulation film (6) has a second opening (27) at another position on said third region (2, 11), and said collector electrode (9) is formed in said second opening (27).
Claim 11
Dependent Claim
38 words
A semiconductor device according to claim 7, further comprising a high impurity concentration region (2) of said first conductivity type formed in said third region, said collector electrode (9) being formed on said high impurity concentration region (2).
Claim 12
Dependent Claim
20 words
A semiconductor device according to claim 6, wherein said first polycrystalline semiconductor layer (18) serves as an extrinsic base region.
Claim 13
Dependent Claim
50 words
A semiconductor device according to claim 5, wherein said first region (4) includes a pair of emitter and collector regions (4-1, 4-2) spaced from each other, and said first convex portion (11) between said emitter and collector regions serves as a base region, to form a lateral bipolar transistor (I).
Claim 14
Dependent Claim
61 words
A semiconductor device according to claim 5, wherein said first region (4-3) serves as a base region, a collector region (5) of said first conductivity type is formed in said base region (4-3), and an emitter region (3, 11) of said first conductivity type is formed in said body under said first convex portion, to form an inverse bipolar transistor (II).
Claim 15
Dependent Claim
66 words
A semiconductor device according to claim 12, wherein said insulation film (6) has a second opening, a second convex portion (11) of said first conductivity type is provided in said second opening, and a pair of emitter and collector regions (4-1, 4-2) of said second conductivity type is formed in said second convex portion (11) spaced from each other, to form a lateral bipolar transistor (I).
Claim 16
Dependent Claim
63 words
A semiconductor device according to claim 13, wherein said first polycrystalline semiconductor layer (18) keeps said base region (4-3) of the inverse bipolar transistor (II) in contact with said collector region (4-2) of the lateral bipolar transistor (I), and said emitter region (2, 3) of the inverse bipolar transistor (II) extends under said second convex portion (11), to form an integrated injection logic.
Claim 17
Dependent Claim
55 words
A semiconductor device according to claim 14, wherein a second polycrystalline semiconductor layer (18) of said second conductivity type is formed in contact with said emitter region (4-1) of the lateral bipolar transistor (I) on said insulation layer, and a second metal silicide layer (19, 23) is formed on said second polycrystalline semiconductor layer (18).
Claim 18
Independent Claim
151 words
A method of manufacturing a semiconductor device comprising: forming a semiconductor body (1, 2) of a single crystal having a first convex portion (11) of a first conductivity type; forming an insulation film (6) on a surface of said body, said insulation film including a first opening over said first convex portion (11); exposing a surface of said convex portion (11); depositing a first polycrystalline semiconductor layer (18) of a second conductivity type opposite to said first conductivity type on said first convex portion (11) and on said insulation film (6); depositing at least one layer (19) selected from a metal layer and a metal silicide layer on said first polycrystalline semiconductor layer (18); annealing said layers (18, 19) deposited on said insulation film (6); and forming a first region (4) of said second conductivity type in said first convex portion (11) in contact with said first polycrystalline semiconductor layer (18).
Claim 19
Independent Claim
151 words
A method of manufacturing a semiconductor device comprising: forming a semiconductor body (1, 2) of a single crystal having a first convex portion (11) of a first conductivity type; forming an insulation film (6) on a surface of said body, said insulation film including a first opening over said first convex portion (11); exposing a surface of said convex portion (11); depositing a first polycrystalline semiconductor layer (18) of a second conductivity type opposite to said first conductivity type on said first convex portion (11) and on said insulation film (6); depositing at least one layer (19) selected from a metal layer and a metal silicide layer on said first polycrystalline semiconductor layer (18); annealing said layers (18, 19) deposited on said insulation film (6); and forming a first region (4) of said second conductivity type in said first convex portion (11) in contact with said first polycrystalline semiconductor layer (18).
References Cited (Backward Citations)
No citation records indexed.
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