EP0101739A1
Expired / Lapsed
EP
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Heterojunction transistor and method of fabricating the same
Assignee: Hitachi Ltd
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Filing: 1983-02-18
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Granted: —
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Expires: 2003-02-18
Abstract
Abstract Semiconductor device having a hetero junction in which a polycrystalline or amorphous silicon layer (7) doped with oxygen is formed over a monocrystalline silicon semiconductor substrate (1) as a passivation film, and impurities are doped only into the desired portions of the layer (7), thereby forming a semiconductor layer having a desired conductivity type. The photoetching step which is heretofore required can be omitted by forming the oxygen-doped polycrystalline or amorphous silicon layer (7) and then doping impurities having the desired conductive type.
Inventors
- 👤 Tomoyuki Tanaka
- 👤 Koichiro Yamada
- 👤 Yasumichi Yasuda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 22:12
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/021; H10D62/00; H10D62/10; H10D62/13; H10D62/133; H10D62/136; H10D62/40; H10P; H10P32/00; H10P32/30; H10P32/302; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
56 words
In a semiconductor device consisting of a single crystal silicon substrate and an O-doped polycrystalline or amorphous silicon layer formed on one main surface of said silicon substrate, the improvement wherein said O-doped polycrystalline or amorphous silicon layer contains an impurity having a desired conductivity type at its desired portion, and exhibits said desired conductivity type.
Claim 2
Dependent Claim
56 words
In a semiconductor device consisting of a single crystal silicon substrate and an O-doped polycrystalline or amorphous silicon layer formed on one main surface of said silicon substrate, the improvement wherein said O-doped polycrystalline or amorphous silicon layer contains an impurity having a desired conductivity type at its desired portion, and exhibits said desired conductivity type.
Claim 3
Dependent Claim
100 words
The semiconductor device as defined in claim 1 wherein said single crystal silicon substrate consists of a first layer of one conductivity type adjacent to one of the main surfaces of said substrate and a second layer of another conductivity type extending adjacent to said one main surface into said first layer and forming a first p-n junction, whose end portion is exposed to said one main surface, between said first layer, and the portion of said O-doped polycrystalline or amorphous silicon layer containing said impurity exhibits one conductivity type and forms a second p-n junction between said second layer.
Claim 4
Dependent Claim
53 words
The semiconductor device as defined in claim 2 wherein said O-doped polycrystalline or amorphous silicon layer contains an impurity of another conductivity type at its portion and exhibits said another conductivity type, and said portion having said another conductivity type is formed adjacent to said second layer of said single crystal silicon substrate.
Claim 5
Dependent Claim
134 words
A process for fabricating a semiconductor device comprising the steps of: disposing a region having one conductivity type at a part of a single crystal silicon substrate having another conductivity type to form a p-n junction so that the end portion of said junction is exposed to one main surface of said silicon substrate; forming an O-doped polycrystalline or amorphous silicon layer on said one main surface of said single crystal silicon substrate; and doping an impurity of another conductivity type to the portion of said O-doped polycrystalline or amorphous silicon layer which is positioned above the region of said single crystal silicon substrate having one conductivity type, to form a region exhibiting another conductivity type and forming a p-n junction between the region of said single crystal silicon substrate having one conductivity type.
Claim 6
Dependent Claim
134 words
A process for fabricating a semiconductor device comprising the steps of: disposing a region having one conductivity type at a part of a single crystal silicon substrate having another conductivity type to form a p-n junction so that the end portion of said junction is exposed to one main surface of said silicon substrate; forming an O-doped polycrystalline or amorphous silicon layer on said one main surface of said single crystal silicon substrate; and doping an impurity of another conductivity type to the portion of said O-doped polycrystalline or amorphous silicon layer which is positioned above the region of said single crystal silicon substrate having one conductivity type, to form a region exhibiting another conductivity type and forming a p-n junction between the region of said single crystal silicon substrate having one conductivity type.
Claim 7
Dependent Claim
78 words
The process for fabricating a semiconductor device as defined in claim 4 which further includes the step of doping an impurity having one conductivity type to the portion of said O-doped polycrystalline or amorphous silicon layer which is positioned above the region of said single crystal silicon substrate having one conductivity type, in order to form a region exhibiting the same conductivity type as that of the region of said single crystal silicon substrate having one conductivity type.
References Cited (Backward Citations)
No citation records indexed.
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