EP0101632A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Resistor
Assignee: Koninklijke Philips NV
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Filing: 1983-07-29
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Granted: —
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Expires: 2003-07-29
Abstract
Abstract A resistor consists of an insulating substrate bearing a thin layer of the alloy CrSi x where 1 ≤ x ≤ 5 and which layer is doped with nitrogen. The doping may be stread homogeneously throughout the thickness or be concentrated in one or two thickness zones on the outside and/or on the side adjoining the substrate. As a result of the nitrogen doping an improvement of the stability of the resistor is obtained.
Inventors
- 👤 Ludovicus Vugts
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 00:21
CPC Classifications
H; H01; H01C; H01C7/00; H01C17/00; H01C17/06; H01C17/075; H01C17/12; H01C7/06; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49099
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
40 words
A resistor comprising an insulating substrate on which a thin layer of a chromium silicon alloy is present of the composition CrSi x , where 1 ≤ x 5, characterized in that the CrSi layer comprises nitrogen as a dopant.
Claim 2
Dependent Claim
40 words
A resistor comprising an insulating substrate on which a thin layer of a chromium silicon alloy is present of the composition CrSi x , where 1 ≤ x 5, characterized in that the CrSi layer comprises nitrogen as a dopant.
Claim 3
Dependent Claim
34 words
A resistor as claimed in Claim 1, characterized in that the nitrogen dopant is present throughout the layer thickness in a quantity of at least 1 at % and at most 10 at. %.
Claim 4
Dependent Claim
35 words
A resistor as claimed in Claim 1, characterized in that the doping is present in at least one thickness zone, on the outside and/or the side adjoining the substrate in combination with a non-doped zone.
Claim 5
Dependent Claim
66 words
A method of manufacturing a resistor as claimed in Claim 2, characterized in that a layer is provided on the substrate from a target of chromium silicon by means of sputtering in an atmosphere of an inert carrier gas with such a nitrogen pressure, dependent on the sputtering current and the filling of the sputtering device, that 1-10 at.% nitrogen is incorporated in the deposited material.
Claim 6
Dependent Claim
67 words
A method of manufacturing a resistor as claimed in Claim 3, characterized in that the substrate is first subjected to the sputtering process with a chromium silicon plate in an atmosphere of the inert carrier gas to which nitrogen has been added, the nitrogen supply is then discontinued while the sputtering in the undoped carrier gas proceeds and finally nitrogen is again supplied to the carrier gas.
References Cited (Backward Citations)
US3381255A
Cited
US3477935A
Cited
FR2351478A1
Cited
FR2393410A1
Cited
DE2909804A1
Cited
WO1983000256A1
Cited
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