EP0100166A2
Expired / Lapsed
EP
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Semiconductor device including a connection structure
Assignee: Fujitsu Ltd
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Filing: 1983-07-05
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Granted: —
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Expires: 2003-07-05
Abstract
Abstract In a semiconductor device including a connection structure comprising a first conductive layer 14 formed in or on a semiconductor substrate 11, a second conductive layer 15 arranged adjacent the first conductive layer 14, and a third conductive layer 17 connecting the first conductive layer 14, and to the second conductive layer 15. The third conductive layer 17 is in contact with the first 14 and second 15 conductive layers in a contact region 16 min . One dimension of the portion of the second conductive layer 15 in the contact region 16 min varies which enables the size of the contact region 16 min to be reduced whilst still ensuring a positive connection between the first 14 and second 15, conductive layers even in the event of their misregistry.
Inventors
- 👤 Takahiko Yamauchi
- 👤 Teruo Seki
- 👤 Keizo Aoyama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 03:00
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/01; H10W20/031; H10W20/0698
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
168 words
A semiconductor device including a connection structure comprising a first conductive layer (14) formed in or on a semiconductor substrate (11), a second conductive layer (15) arranged adjacent the first conductive layer (14), and a third conductive layer (17) connecting the first (14) and second (15) conductive layers and being in contact with the first (14) and second (15) conductive layers in a rectangular contact region (16') which is formed where the first conductive layer (14) is adjacent the second conductive layer (15) and is defined so as to extend over the first (14) and second (15) conductive layers, characterised in that the portion of the second conductive layer (15) located within the contact region (16') is shaped so that the dimension of the second conductive layer (15) in one direction at a first position is less than the dimension of the second conductive layer (15) in the one direction at a second position spaced from the first position in the other direction perpendicular to the one direction.
Claim 2
Dependent Claim
168 words
A semiconductor device including a connection structure comprising a first conductive layer (14) formed in or on a semiconductor substrate (11), a second conductive layer (15) arranged adjacent the first conductive layer (14), and a third conductive layer (17) connecting the first (14) and second (15) conductive layers and being in contact with the first (14) and second (15) conductive layers in a rectangular contact region (16') which is formed where the first conductive layer (14) is adjacent the second conductive layer (15) and is defined so as to extend over the first (14) and second (15) conductive layers, characterised in that the portion of the second conductive layer (15) located within the contact region (16') is shaped so that the dimension of the second conductive layer (15) in one direction at a first position is less than the dimension of the second conductive layer (15) in the one direction at a second position spaced from the first position in the other direction perpendicular to the one direction.
Claim 3
Dependent Claim
43 words
A semiconductor device according to claim 1, in which the second conductive layer (15) is square or rectangular in shape, with a corner in the contact region (16') being absent so that the second conductive layer (15) in the contact region is wedge-shaped.
Claim 4
Dependent Claim
50 words
A semiconductor device according to claim 1, in which the second conductive layer (15) is square or rectangular in shape, with a corner in the contact region absent so that a square or rectangular shaped projecting portion of the second conductive layer (15) is located in the contact region (16').
Claim 5
Dependent Claim
17 words
A semiconductor device according to any one of the preceding claims, in which the second conductive layer
Claim 6
Dependent Claim
9 words
(15) is made of polycrystalline silicon, molybdenum, or tungsten.
Claim 7
Dependent Claim
9 words
(15) is made of polycrystalline silicon, molybdenum, or tungsten.
References Cited (Backward Citations)
No citation records indexed.
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