EP0099720A2
Expired / Lapsed
EP
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Photovoltaic device
Assignee: Toshiba Corp
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Filing: 1983-07-12
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Granted: —
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Expires: 2003-07-12
Abstract
Abstract A photovoltaic device comprises a transparent substrate (21), an amorphous silicon layer structure of a p-i-n type formed on the substrate (21) and comprised of a p-layer (23), i-layer (24) and n-layer (25), and an electrode (26) formed on the amorphous silicon layer structure, of the p-layer (23) and n-layer (25) of the amorphous silicon layer structure, that layer on which light is incident is such that an optical forbidden band gap is greater on the i-layer side than on the substrate side.
Inventors
- 👤 Hidetoshi Nozaki
- 👤 Takaaki Kamimura
- 👤 Tamothu Hatayama
- 👤 Tadashi Utagawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 23:54
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; H10F30/2235; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F77/1692; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
87 words
A photovoltaic device comprising a transparent substrate (21), an amorphous silicon layer structure of a p-i-n type formed on the substrate (21) and comprised of a p-layer (23), i-layer (24) and n-layer (25), and an electrode (26) formed on the amorphous silicon layer, characterized in that out of the p-layer (23) and . n-layer (25) of the amorphous silicon layer structure, that layer on which light is incident is such that an optical forbidden band gap is greater on the i-layer side than on the substrate side.
Claim 2
Dependent Claim
87 words
A photovoltaic device comprising a transparent substrate (21), an amorphous silicon layer structure of a p-i-n type formed on the substrate (21) and comprised of a p-layer (23), i-layer (24) and n-layer (25), and an electrode (26) formed on the amorphous silicon layer, characterized in that out of the p-layer (23) and . n-layer (25) of the amorphous silicon layer structure, that layer on which light is incident is such that an optical forbidden band gap is greater on the i-layer side than on the substrate side.
Claim 3
Dependent Claim
20 words
A photovoltaic device according to claim 1, in which said amorphous silicon layer structure is made of hydrogenated amorphous silicon.
Claim 4
Dependent Claim
20 words
A photovoltaic device according to claim 1, in which said amorphous silicon layer structure is made of amorphous silicon carbide.
Claim 5
Dependent Claim
40 words
A photovoltaic device according to claim 1, in which said amorphous silicon layer structure is comprised of a two-layer structure in which one sublayer is made of hydrogenated amorphous silicon and the other sublayer is made of amorphous silicon carbide.
Claim 6
Dependent Claim
20 words
A photovoltaic device according to claim 2, in which that layer on which light is incident is a p-layer (23).
Claim 7
Dependent Claim
20 words
A photovoltaic device according to claim 2, in which that layer on which light is incident is an n-layer (25).
Claim 8
Dependent Claim
27 words
A photovoltaic device according to claim 5, in which said p-layer (23) is comprised of a plurality of sublayers each having a different optical forbidden band gap.
Claim 9
Dependent Claim
35 words
A photovoltaic device according to claim 7, in which said p-layer is comprised of a first p-sublayer (23a) in contact with a substrate (21) and a second p-sublayer (23b) in contact with an i-layer (24).
Claim 10
Dependent Claim
56 words
A photovoltaic device according to claim 8, in which said first p-sublayer (23a) has a thickness of 20 to 50 A and an optical forbidden band gap of 1.6 to 2.0 eV, and said second p-sublayer (23b) has a thickness of 50 to 100 A and an optical forbidden band gap of 1.6 to 2.0 eV.
Claim 11
Dependent Claim
27 words
A photovoltaic device according to claim 6, in which said n-layer (25) is comprised of a plurality of sublayers each having a different optical forbidden band gap.
Claim 12
Dependent Claim
34 words
A photovoltaic device according to claim 10, in which said n-layer (25) is comprised of a first n-sublayer in contact with a substrate (21) and a second n-sublayer in contact with an i-layer (24).
Claim 13
Dependent Claim
54 words
A photovoltaic device according to claim 11, in which said first n-sublayer has a thickness of 20 to 50 A and an optical forbidden band gap of 1.6 to 2.0 eV and said second n-sublayer has a thickness of 50 to 100 A and an optical forbidden band gap of 1.7 to 2.1 eV.
Claim 14
Dependent Claim
24 words
A photovoltaic device according to claim 1, in which said transparent substrate (21) has a transparent electrode (22) on the amorphous silicon layer structure.
Claim 15
Dependent Claim
21 words
A photovoltaic device according to claim 12, in which said transparent electrode (22) is made of an indium oxide-tin oxide layer.
Claim 16
Dependent Claim
56 words
A photovoltaic device comprising an amorphous silicon layer comprised of a p-layer (23), i-layer (24) and n-layer (25), characterized in that out of the p-layer (23) and the n-layer (25), that layer on which light is incident is such that an optical forbidden band gap is greater on the i-layer side than on the substrate side.
Claim 17
Dependent Claim
56 words
A photovoltaic device comprising an amorphous silicon layer comprised of a p-layer (23), i-layer (24) and n-layer (25), characterized in that out of the p-layer (23) and the n-layer (25), that layer on which light is incident is such that an optical forbidden band gap is greater on the i-layer side than on the substrate side.
References Cited (Backward Citations)
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