EP0098582A2
Expired / Lapsed
EP
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Method for patterning layer having high reflectance using photosensitive material
Assignee: Toshiba Corp
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Filing: 1983-07-05
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Granted: —
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Expires: 2003-07-05
Abstract
Abstract A method for patterning a layer having a high reflectance includes directly forming on a layer (13) having a high reflectance a light-absorbing film (21) having a ratio of transmitted light intensity to exposing incident light intensity of not more than 30% and forming a photosensitive material film (14) on the light-absorbing film (21). A selected region of the photosensitive material film (14) is irradiated with the exposing incident light, and the photosensitive material film (14) is developed to form a first pattern (14'). The light-absorbing film (21) is selectively etched using the first pattern (14') as a mask so as to form a second pattern (21'). Finally, the layer (13) having the high reflectance is selectively etched using the second pattern (21') as a mask.
Inventors
- 👤 Tsunehisa Ueno
- 👤 Yutaka Kamata
- 👤 Sinji Miyazaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 01:15
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/60; H10P50/66; H10P50/663; H10P50/667; H10P76/2043; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/952
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
136 words
A method for patterning a layer having a high reflectance, comprising the steps of: forming a photosensitive material film over a layer having a high reflectance; irradiating a selected region of said photosensitive material film with an exposing incident light; developing said photosensitive material film to form a first pattern; and selectively etching said layer having the high reflectance using said first pattern as a mask, characterized in that a light-absorbing film having a ratio of transmitted light intensity to exposing incident light intensity of not more than 30% is formed between said high reflectance layer and said photosensitive material film, said first pattern is used as a mask to selectively etch said light-absorbing film, thereby forming a second pattern, and said second pattern is used as a mask to selectively etch said high reflectance layer.
Claim 2
Independent Claim
136 words
A method for patterning a layer having a high reflectance, comprising the steps of: forming a photosensitive material film over a layer having a high reflectance; irradiating a selected region of said photosensitive material film with an exposing incident light; developing said photosensitive material film to form a first pattern; and selectively etching said layer having the high reflectance using said first pattern as a mask, characterized in that a light-absorbing film having a ratio of transmitted light intensity to exposing incident light intensity of not more than 30% is formed between said high reflectance layer and said photosensitive material film, said first pattern is used as a mask to selectively etch said light-absorbing film, thereby forming a second pattern, and said second pattern is used as a mask to selectively etch said high reflectance layer.
Claim 3
Dependent Claim
38 words
A method according to claim 1, characterized in that said light-absorbing film comprises at least one light-absorbing material selected from the group consisting of silicon nitride, silicon oxide, and aluminum oxide which have nonstoichiometric compositions, and amorphous silicon.
Claim 4
Dependent Claim
21 words
A method according to claim 2, characterized in that said light-absorbing material is formed by plasma CVD, photo-CVD or ion plating.
Claim 5
Dependent Claim
47 words
A method according to claim 2, characterized in that said light-absorbing material is formed by plasma CVD in which a degree of vacuum of an atmosphere including raw materials is controlled so as to establish said ratio of the transmitted light intensity to the incident light intensity.
Claim 6
Dependent Claim
47 words
A method according to claim 2, characterized in that said light-absorbing material is formed by plasma CVD in which a flow rate of nitrogen gas as a carrier gas is controlled so as to establish said ratio of the transmitted light intensity to the incident light intensity.
Claim 7
Dependent Claim
40 words
A method according to claim 2, characterized in that said light-absorbing material is formed by plasma CVD in which a high-frequency power is controlled so as to establish said ratio of the transmitted light intensity to the incident light intensity.
Claim 8
Dependent Claim
24 words
A method according to claim 1, characterized in that said layer having the high reflectance comprises aluminum, polycrystalline silicon, tungsten, molybdenum or molybdenum silicide.
Claim 9
Dependent Claim
16 words
A method according to claim 1, characterized in that said photosensitive material is a positive-working photoresist.
Claim 10
Dependent Claim
16 words
A method according to claim 1, characterized in that said photosensitive material is a negative-working photoresist.
References Cited (Backward Citations)
No citation records indexed.
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